RJP020N06T100 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.92 EUR |
2000+ | 0.87 EUR |
5000+ | 0.83 EUR |
10000+ | 0.79 EUR |
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Technische Details RJP020N06T100 Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: MPT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V.
Weitere Produktangebote RJP020N06T100 nach Preis ab 0.82 EUR bis 2.08 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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RJP020N06T100 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 2A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: MPT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V |
auf Bestellung 16507 Stücke: Lieferzeit 21-28 Tag (e) |
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RJP020N06T100 | Hersteller : ROHM Semiconductor | MOSFET N-CH 60V 2.5A |
auf Bestellung 23388 Stücke: Lieferzeit 14-28 Tag (e) |
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RJP020N06T100 | Hersteller : ROHM - Japan |
N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT3 RJP020N06T100 ROHM TRJP020n06t100 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 82 Stücke: Lieferzeit 7-14 Tag (e) |
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RJP020N06 T100 | Hersteller : ROHM | 09+ |
auf Bestellung 1018 Stücke: Lieferzeit 21-28 Tag (e) |
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RJP020N06 T100 | Hersteller : ROHM | SOT89 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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RJP020N06T100 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RJP020N06T100 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |