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RM4Z



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Technische Details RM4Z

Description: DIODE GEN PURP 200V 3A AXIAL, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: Axial, Packaging: Bulk.

Weitere Produktangebote RM4Z

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RM 4Z RM 4Z Sanken Electric USA Inc. rm%204z_ds_en.pdf Description: DIODE GEN PURP 200V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RM 4Z rm%204z_ds_en.pdf
RM 4Z
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH