SCH1331-TL-W Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER MOSFET
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-563/SCH6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 84mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
| Anzahl | Preis |
|---|---|
| 2567+ | 0.2 EUR |
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Technische Details SCH1331-TL-W Fairchild Semiconductor
Description: POWER MOSFET, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: SOT-563/SCH6, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 84mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
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