Technische Details SD1015 ST
Description: RF TRANS NPN 18V 150MHZ M135, Supplier Device Package: M135, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V, Voltage - Collector Emitter Breakdown (Max): 18V, Current - Collector (Ic) (Max): 1A, Power - Max: 10W, Gain: 10dB, Operating Temperature: 200°C, Transistor Type: NPN, Mounting Type: Stud Mount, Package / Case: M135, Packaging: Bulk.
Weitere Produktangebote SD1015
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SD1015 | Microsemi Corporation |
Description: RF TRANS NPN 18V 150MHZ M135 Supplier Device Package: M135 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 1A Power - Max: 10W Gain: 10dB Operating Temperature: 200°C Transistor Type: NPN Mounting Type: Stud Mount Package / Case: M135 Packaging: Bulk |
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| SD1015 |
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 18V 150MHZ M135
Supplier Device Package: M135
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V
Voltage - Collector Emitter Breakdown (Max): 18V
Current - Collector (Ic) (Max): 1A
Power - Max: 10W
Gain: 10dB
Operating Temperature: 200°C
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: M135
Packaging: Bulk
Description: RF TRANS NPN 18V 150MHZ M135
Supplier Device Package: M135
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V
Voltage - Collector Emitter Breakdown (Max): 18V
Current - Collector (Ic) (Max): 1A
Power - Max: 10W
Gain: 10dB
Operating Temperature: 200°C
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: M135
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH