Technische Details SFU9024TU FSC
Description: P-CHANNEL POWER MOSFET, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 32W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 3.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: IPAK.
Weitere Produktangebote SFU9024TU
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SFU9024TU | Hersteller : Fairchild Semiconductor |
Description: P-CHANNEL POWER MOSFETVgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: IPAK |
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