Technische Details SGB30N60 INFINEON
Description: IGBT, 41A, 600V, N-CHANNEL, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 44ns/291ns, Switching Energy: 1.29mJ, Test Condition: 400V, 30A, 11Ohm, 15V, Gate Charge: 140 nC, Current - Collector (Ic) (Max): 41 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 112 A, Power - Max: 250 W.
Weitere Produktangebote SGB30N60
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SGB30N60 Produktcode: 125330
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SGB30N60 | Hersteller : Infineon Technologies |
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SGB30N60 | Hersteller : Infineon Technologies |
Description: IGBT, 41A, 600V, N-CHANNEL Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 44ns/291ns Switching Energy: 1.29mJ Test Condition: 400V, 30A, 11Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 112 A Power - Max: 250 W |
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SGB30N60 | Hersteller : Infineon Technologies |
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