Technische Details SGH10N60RUFDTU ON Semiconductor
Description: IGBT 600V 16A TO-3PN, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A, Supplier Device Package: TO-3PN, Td (on/off) @ 25°C: 15ns/36ns, Switching Energy: 141µJ (on), 215µJ (off), Test Condition: 300V, 10A, 20Ohm, 15V, Gate Charge: 30 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 75 W.
Weitere Produktangebote SGH10N60RUFDTU nach Preis ab 3.4 EUR bis 4.55 EUR
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SGH10N60RUFDTU | ON Semiconductor |
 Trans IGBT Chip N-CH 600V 16A 75W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 2197 Stücke: Lieferzeit 14-21 Tag (e) |
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SGH10N60RUFDTU | ON Semiconductor |
Trans IGBT Chip N-CH 600V 16A 75W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 170526 Stücke: Lieferzeit 14-21 Tag (e) |
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SGH10N60RUFDTU | Fairchild Semiconductor |
Description: IGBT 600V 16A TO-3PN Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A Supplier Device Package: TO-3PN Td (on/off) @ 25°C: 15ns/36ns Switching Energy: 141µJ (on), 215µJ (off) Test Condition: 300V, 10A, 20Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 75 W |
auf Bestellung 173040 Stücke: Lieferzeit 10-14 Tag (e) |
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| SGH10N60RUFDTU |
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auf Bestellung 8095 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SGH10N60RUFDTU |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 16A 75W 3-Pin(3+Tab) TO-3P Tube
Trans IGBT Chip N-CH 600V 16A 75W 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 2197 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 4.31 EUR |
| 500+ | 4.01 EUR |
| 1000+ | 3.71 EUR |
| SGH10N60RUFDTU |
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Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 16A 75W 3-Pin(3+Tab) TO-3P Tube
Trans IGBT Chip N-CH 600V 16A 75W 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 170526 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 4.31 EUR |
| 500+ | 4.01 EUR |
| 1000+ | 3.71 EUR |
| 10000+ | 3.4 EUR |
| SGH10N60RUFDTU |
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Hersteller: Fairchild Semiconductor
Description: IGBT 600V 16A TO-3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Supplier Device Package: TO-3PN
Td (on/off) @ 25°C: 15ns/36ns
Switching Energy: 141µJ (on), 215µJ (off)
Test Condition: 300V, 10A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 75 W
Description: IGBT 600V 16A TO-3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Supplier Device Package: TO-3PN
Td (on/off) @ 25°C: 15ns/36ns
Switching Energy: 141µJ (on), 215µJ (off)
Test Condition: 300V, 10A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 75 W
auf Bestellung 173040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 121+ | 4.55 EUR |
| SGH10N60RUFDTU |
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auf Bestellung 8095 Stücke:
Lieferzeit 21-28 Tag (e)