Technische Details SGP15N120XKSA1 Infineon Technologies
Description: IGBT 1200V 30A 198W TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A, Supplier Device Package: PG-TO220-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 18ns/580ns, Switching Energy: 1.9mJ, Test Condition: 800V, 15A, 33Ohm, 15V, Gate Charge: 130 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 52 A, Power - Max: 198 W.
Weitere Produktangebote SGP15N120XKSA1
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SGP15N120XKSA1 Produktcode: 195669 |
![SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b](/images/adobe-acrobat.png) Transistoren > Transistoren IGBT, Leistungsmodule |
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SGP15N120XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 30A 198000mW 3-Pin(3+Tab) TO-220AB Tube |
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SGP15N120XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 30A 198W 3-Pin(3+Tab) TO-220AB Tube |
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SGP15N120XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 30A 198W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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SGP15N120XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 1200V 30A 198W TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A Supplier Device Package: PG-TO220-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 18ns/580ns Switching Energy: 1.9mJ Test Condition: 800V, 15A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Last Time Buy Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 52 A Power - Max: 198 W |
Produkt ist nicht verfügbar |
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| SGP15N120XKSA1 | Hersteller : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
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