SI1072X-T1-GE3
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Technische Details SI1072X-T1-GE3
Description: MOSFET N-CH 30V SC89-6, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SC-89 (SOT-563F), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 236mW (Ta), Rds On (Max) @ Id, Vgs: 93mOhm @ 1.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1072X-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI1072X-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V SC89-6 Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SC-89 (SOT-563F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.3A, 10V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1072X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH