SI4392ADY-T1-E3

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 21.5A; Idm: 50A, Mounting: SMD, Case: SO8, Kind of package: reel; tape, Pulsed drain current: 50A, Power dissipation: 6.25W, Gate charge: 38nC, Polarisation: unipolar, Technology: TrenchFET®, Drain current: 21.5A, Kind of channel: enhancement, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 11.5mΩ.