SI4462DY-T1-E3

Description: MOSFET N-CH 200V 1.15A 8-SOIC, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Cut Tape (CT).