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Technische Details SI4464DY-T1-E3 Vishay
Description: MOSFET N-CH 200V 1.7A 8SO, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4464DY-T1-E3 nach Preis ab 0.86 EUR bis 4.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4464DY-T1-E3 | Vishay |
 Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4464DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 1.7A 8SO Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 13000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4464DY-T1-E3 | Vishay |
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4464DY-T1-E3 | Vishay |
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4464DY-T1-E3 | Vishay Semiconductors |
MOSFETs 200V Vds 20V Vgs SO-8 |
auf Bestellung 3146 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4464DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 1.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V |
auf Bestellung 13284 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4464DYT1E3 | VISHAY |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SI4464DY-T1-E3 | VISHAY |
05+ |
auf Bestellung 38000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4464DY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.89 EUR |
| 5000+ | 0.86 EUR |
| SI4464DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 1.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.21 EUR |
| 5000+ | 1.13 EUR |
| 7500+ | 1.09 EUR |
| 12500+ | 1.07 EUR |
| SI4464DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 1.94 EUR |
| 92+ | 1.89 EUR |
| 128+ | 1.33 EUR |
| 250+ | 1.08 EUR |
| SI4464DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 2.75 EUR |
| 91+ | 1.87 EUR |
| 92+ | 1.78 EUR |
| 128+ | 1.23 EUR |
| 250+ | 0.99 EUR |
| SI4464DY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 200V Vds 20V Vgs SO-8
MOSFETs 200V Vds 20V Vgs SO-8
auf Bestellung 3146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.28 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.38 EUR |
| 2500+ | 1.17 EUR |
| 5000+ | 1.14 EUR |
| SI4464DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Description: MOSFET N-CH 200V 1.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 13284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.21 EUR |
| 10+ | 2.7 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.34 EUR |
| SI4464DYT1E3 |
Hersteller: VISHAY
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
| SI4464DY-T1-E3 |
|
Hersteller: VISHAY
05+
05+
auf Bestellung 38000 Stücke:
Lieferzeit 21-28 Tag (e)