Technische Details SI4466DY FAIRCHILD
Description: SMALL SIGNAL N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.
Weitere Produktangebote SI4466DY
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
SI4466DY | Fairchild Semiconductor |
Description: SMALL SIGNAL N-CHANNEL MOSFETInput Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
SI4466DY | onsemi / Fairchild |
MOSFETs SO8 NCH 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
SI4466DY | Vishay / Siliconix |
MOSFETs RECOMMENDED ALT SI41 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI4466DY |
![]() |
Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: SMALL SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4466DY |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs SO8 NCH 20V
MOSFETs SO8 NCH 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4466DY |
![]() |
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT SI41
MOSFETs RECOMMENDED ALT SI41
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



