| Anzahl | Preis |
|---|---|
| 1+ | 5.14 EUR |
| 10+ | 3.34 EUR |
| 100+ | 2.38 EUR |
| 500+ | 2.04 EUR |
| 1000+ | 1.78 EUR |
| 10000+ | 1.71 EUR |
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Technische Details SI4490DY-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 200V 2.85A 8SO, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Power Dissipation (Max): 1.56W (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4490DY-T1-E3 nach Preis ab 2.09 EUR bis 5.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SI4490DY-T1-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 200V 2.85A 8SOGate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 587 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4490DYT1E3 | VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| SI4490DY-T1-E3 | VISHAY |
07+ SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4490DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.85A 8SO
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 2.85A 8SO
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 587 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.28 EUR |
| 10+ | 3.44 EUR |
| 100+ | 2.4 EUR |
| 500+ | 2.09 EUR |
| SI4490DYT1E3 |
Hersteller: VISHAY
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
| SI4490DY-T1-E3 |
|
Hersteller: VISHAY
07+ SO-8
07+ SO-8
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)