| Anzahl | Preis |
|---|---|
| 373+ | 1.46 EUR |
| 500+ | 1.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4963DY ON Semiconductor
Description: MOSFET 2P-CH 20V 6.2A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 10V, Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4963DY nach Preis ab 1.02 EUR bis 1.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI4963DY | ON Semiconductor |
 Trans MOSFET P-CH 20V 6.2A 8-Pin SOIC T/R |
auf Bestellung 39662 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
| SI4963DY | Fairchild Semiconductor |
Description: MOSFET 2P-CH 20V 6.2A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 40594 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||
| SI4963DY | FAIRCHILD |
09+ |
auf Bestellung 868 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4963DY |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 6.2A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 6.2A 8-Pin SOIC T/R
auf Bestellung 39662 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 373+ | 1.46 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.16 EUR |
| 10000+ | 1.02 EUR |
| SI4963DY |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET 2P-CH 20V 6.2A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 20V 6.2A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 40594 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 298+ | 1.53 EUR |
| SI4963DY |
|
Hersteller: FAIRCHILD
09+
09+
auf Bestellung 868 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH