SIA814DJ-T1-GE3
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auf Bestellung 1222 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SIA814DJ-T1-GE3
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Obsolete, Supplier Device Package: PowerPAK® SC-70-6 Dual, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6 Dual, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIA814DJ-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SIA814DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Obsolete Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIA814DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIA814DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIA814DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH