SKM100GB176D
Produktcode: 34427
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Transistoren > Transistoren IGBT, Leistungsmodule
Produktrezensionen
Produktbewertung abgeben
Technische Details SKM100GB176D
- IGBT MODULE, DUAL, 1700V
- Transistor Type:IGBT Module
- Transistor Polarity:N Channel
- Voltage Vces:1700V
- Max Current Ic Continuous a:125A
- Max Voltage Vce Sat:2.45V
- Case Style:SEMITRANS 2
- Termination Type:Screw
- Av Current Ic:125A
- Collector-to-Emitter Breakdown Voltage:1700V
- Current Temperature:25`C
- External Depth:35mm
- External Width:90mm
- Fixing Centres:80mm
- Fixing Hole Diameter:6.4mm
- Max Current Ic Continuous b:90A
- No. of Transistors:2
- Pulsed Current Icm:100A
- Rise Time:140ns
- SMD Marking:SEMITRANS 2
- Voltage:1700V
Weitere Produktangebote SKM100GB176D nach Preis ab 163.87 EUR bis 206.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
SKM100GB176D 22890855 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Case: SEMITRANS2 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Version: D61 Mechanical mounting: screw Pulsed collector current: 150A Application: for UPS; Inverter; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Collector current: 75A Topology: IGBT half-bridge Type of semiconductor module: IGBT |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SKM100GB176D 22890855 |
![]() |
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: SEMITRANS2
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Version: D61
Mechanical mounting: screw
Pulsed collector current: 150A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: SEMITRANS2
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Version: D61
Mechanical mounting: screw
Pulsed collector current: 150A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 206.75 EUR |
| 3+ | 182.25 EUR |
| 8+ | 163.87 EUR |


