SQ4917EY-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details SQ4917EY-T1_BE3 Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V, Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 5W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SQ4917EY-T1_BE3 nach Preis ab 1.1 EUR bis 3.7 EUR
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SQ4917EY-T1_BE3 | Vishay Semiconductors |
MOSFET Dual P-CHANNEL 60 V |
auf Bestellung 41589 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4917EY-T1_BE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 60V 8A 8SOIC Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 22307 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQ4917EY-T1_BE3 |
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Hersteller: Vishay Semiconductors
MOSFET Dual P-CHANNEL 60 V
MOSFET Dual P-CHANNEL 60 V
auf Bestellung 41589 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.45 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.53 EUR |
| 250+ | 1.49 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.15 EUR |
| 2500+ | 1.1 EUR |
| SQ4917EY-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 60V 8A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 22307 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.7 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.18 EUR |