SQ4946CEY-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Technische Details SQ4946CEY-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ4946CEY-T1"GE3 - DUAL N-CHANNEL 60-V (D-S) 175C MOSFE 42AJ0901, tariffCode: 0, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 7A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: N Channel, Verlustleistung, n-Kanal: 4W, Betriebstemperatur, max.: 175°C, directShipCharge: 25, SVHC: To Be Advised.
Weitere Produktangebote SQ4946CEY-T1_GE3 nach Preis ab 0.62 EUR bis 2.46 EUR
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SQ4946CEY-T1_GE3 | Vishay / Siliconix |
MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFE |
auf Bestellung 100025 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4946CEY-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 4114 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4946CEY-T1"GE3 | VISHAY |
Description: VISHAY - SQ4946CEY-T1"GE3 - DUAL N-CHANNEL 60-V (D-S) 175C MOSFE 42AJ0901 tariffCode: 0 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Verlustleistung, n-Kanal: 4W Betriebstemperatur, max.: 175°C directShipCharge: 25 SVHC: To Be Advised |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SQ4946CEY-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFE
MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFE
auf Bestellung 100025 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.71 EUR |
| 2500+ | 0.65 EUR |
| 5000+ | 0.62 EUR |
| SQ4946CEY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.46 EUR |
| 12+ | 1.57 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |
| SQ4946CEY-T1"GE3 |
Hersteller: VISHAY
Description: VISHAY - SQ4946CEY-T1"GE3 - DUAL N-CHANNEL 60-V (D-S) 175C MOSFE 42AJ0901
tariffCode: 0
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Verlustleistung, n-Kanal: 4W
Betriebstemperatur, max.: 175°C
directShipCharge: 25
SVHC: To Be Advised
Description: VISHAY - SQ4946CEY-T1"GE3 - DUAL N-CHANNEL 60-V (D-S) 175C MOSFE 42AJ0901
tariffCode: 0
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Verlustleistung, n-Kanal: 4W
Betriebstemperatur, max.: 175°C
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)