SSR1N60BTM_WS ON Semiconductor
| Anzahl | Preis |
|---|---|
| 1611+ | 0.34 EUR |
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Technische Details SSR1N60BTM_WS ON Semiconductor
Description: MOSFET N-CH 600V 900MA DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Tc), Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V, Power Dissipation (Max): 2.5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V.
Weitere Produktangebote SSR1N60BTM_WS nach Preis ab 0.34 EUR bis 1.19 EUR
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SSR1N60BTM_WS | ON Semiconductor |
 Trans MOSFET N-CH 600V 0.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3855 Stücke: Lieferzeit 14-21 Tag (e) |
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SSR1N60BTM-WS | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 900MA DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V |
auf Bestellung 2350 Stücke: Lieferzeit 10-14 Tag (e) |
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SSR1N60BTM-WS | onsemi / Fairchild |
MOSFET 600V 0.9A 12Ohm N-Channel |
auf Bestellung 1728 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSR1N60BTM_WS |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SSR1N60BTM_WS |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 0.9A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 0.9A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 3855 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1611+ | 0.34 EUR |
| SSR1N60BTM-WS |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1069+ | 0.42 EUR |
| SSR1N60BTM-WS |
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Hersteller: onsemi / Fairchild
MOSFET 600V 0.9A 12Ohm N-Channel
MOSFET 600V 0.9A 12Ohm N-Channel
auf Bestellung 1728 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.19 EUR |
| 10+ | 1.03 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.61 EUR |
| SSR1N60BTM_WS |
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH