SSR2N60B Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Rds On (Max) @ Id, Vgs: 5Ohm @ 900mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).