STB60NF10-1
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auf Bestellung 5331 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STB60NF10-1
Description: MOSFET N-CH 100V 80A I2PAK, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 25 V.
Weitere Produktangebote STB60NF10-1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STB60NF10-1 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 80A I2PAK Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 25 V |
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