STD35NF06LT4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 17.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.04 EUR |
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Technische Details STD35NF06LT4 STMicroelectronics
Description: MOSFET N-CH 60V 35A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 17.5A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V.
Weitere Produktangebote STD35NF06LT4 nach Preis ab 0.99 EUR bis 2.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STD35NF06LT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 80W; DPAK Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 80W Case: DPAK Gate-source voltage: ±16V On-state resistance: 17mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4328 Stücke: Lieferzeit 7-14 Tag (e) |
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STD35NF06LT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 35A; 80W; DPAK Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 80W Case: DPAK Gate-source voltage: ±16V On-state resistance: 17mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 4328 Stücke: Lieferzeit 14-21 Tag (e) |
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STD35NF06LT4 | Hersteller : STMicroelectronics |
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STD35NF06LT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 35A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 17.5A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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STD35NF06LT4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD35NF06LT4 - Leistungs-MOSFET, n-Kanal, 60 V, 17.5 A, 0.014 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 17.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 80W productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.014ohm |
auf Bestellung 28780 Stücke: Lieferzeit 14-21 Tag (e) |
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STD35NF06LT4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD35NF06LT4 - Leistungs-MOSFET, n-Kanal, 60 V, 17.5 A, 0.014 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 17.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 80W productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.014ohm |
auf Bestellung 28780 Stücke: Lieferzeit 14-21 Tag (e) |
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STD35NF06LT4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STD35NF06LT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 35A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |