STE250NS10

Hersteller: STM
ISOTOP Транзистори

Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 220A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 900 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube

Hersteller: STMicroelectronics
MOSFET N-Ch 100 Volt 220 A