STGD10NC60KDT4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 62 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.03 EUR |
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Technische Details STGD10NC60KDT4 STMicroelectronics
Description: IGBT 600V 20A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 22 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A, Supplier Device Package: DPAK, Td (on/off) @ 25°C: 17ns/72ns, Switching Energy: 55µJ (on), 85µJ (off), Test Condition: 390V, 5A, 10Ohm, 15V, Gate Charge: 19 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 62 W.
Weitere Produktangebote STGD10NC60KDT4 nach Preis ab 1.05 EUR bis 3.56 EUR
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STGD10NC60KDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 62W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 62W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1991 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD10NC60KDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 62W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 62W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 1991 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD10NC60KDT4 | Hersteller : STMicroelectronics |
IGBTs N Ch 600V 10A |
auf Bestellung 4002 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD10NC60KDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 20A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Supplier Device Package: DPAK Td (on/off) @ 25°C: 17ns/72ns Switching Energy: 55µJ (on), 85µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 62 W |
auf Bestellung 4405 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGD10NC60KDT4 | Hersteller : ST |
IGBT 600V 20A 62W STGD10NC60KDT4 STMicroelectronics TSTGD10nc60kdt4 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD10NC60KDT4 Produktcode: 198296
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