STGD5NB120SZ-1 STMicroelectronics
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Technische Details STGD5NB120SZ-1 STMicroelectronics
Description: IGBT 1200V 10A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A, Supplier Device Package: TO-251 (IPAK), Td (on/off) @ 25°C: 690ns/12.1µs, Switching Energy: 2.59mJ (on), 9mJ (off), Test Condition: 960V, 5A, 1kOhm, 15V, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 10 A, Power - Max: 75 W.
Weitere Produktangebote STGD5NB120SZ-1
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STGD5NB120SZ-1 Produktcode: 128569 |
 Transistoren > Transistoren IGBT, Leistungsmodule |
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STGD5NB120SZ-1 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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STGD5NB120SZ-1 | Hersteller : STMicroelectronics |
Description: IGBT 1200V 10A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Supplier Device Package: TO-251 (IPAK) Td (on/off) @ 25°C: 690ns/12.1µs Switching Energy: 2.59mJ (on), 9mJ (off) Test Condition: 960V, 5A, 1kOhm, 15V Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 10 A Power - Max: 75 W |
Produkt ist nicht verfügbar |