STGW30NC120HD

Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Collector current: 30A
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 220W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 110nC

Hersteller: STMicroelectronics
IGBTs N-CHANNEL IGBT

Hersteller: ST
60A; 1200V; 220W; IGBT   STGW30NC120HD STMicroelectronics TSTGW30nc120hd
Anzahl je Verpackung: 5 Stücke

Hersteller: STMicroelectronics
Description: IGBT 1200V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/275ns
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGW30NC120HD - IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.75V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 220W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)