STW21NM60N
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Technische Details STW21NM60N
Description: MOSFET N-CH 600V 17A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 140W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW21NM60N
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STW21NM60N | STM |
N-CHANNEL 600V 0.140-20A TO-220 SECOND GENERATION MDmesh MOSFET Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STW21NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 17A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STW21NM60N | STMicroelectronics |
MOSFETs N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STW21NM60N |
|
Hersteller: STM
N-CHANNEL 600V 0.140-20A TO-220 SECOND GENERATION MDmesh MOSFET Транзистори
N-CHANNEL 600V 0.140-20A TO-220 SECOND GENERATION MDmesh MOSFET Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW21NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 17A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW21NM60N |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh
MOSFETs N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH