STW21NM60N
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auf Bestellung 539 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STW21NM60N
Description: MOSFET N-CH 600V 17A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 140W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW21NM60N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| STW21NM60N | Hersteller : STM |
N-CHANNEL 600V 0.140-20A TO-220 SECOND GENERATION MDmesh MOSFET Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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STW21NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 17A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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STW21NM60N | Hersteller : STMicroelectronics |
MOSFETs N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh |
Produkt ist nicht verfügbar |