STW75N20
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Lieferzeit 21-28 Tag (e)
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Technische Details STW75N20
Description: MOSFET N-CH 200V 75A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Packaging: Tube, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3.
Weitere Produktangebote STW75N20
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| STW75N20 | Hersteller : STM |
N-channel 200V - 0.028. - 75A, TO-247 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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STW75N20 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 75A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Packaging: Tube Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 |
Produkt ist nicht verfügbar |
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STW75N20 | Hersteller : STMicroelectronics |
MOSFET POWER MOSFET |
Produkt ist nicht verfügbar |