YJG80G06A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 320A
Power dissipation: 38W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2216 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 127+ | 0.56 EUR |
| 142+ | 0.51 EUR |
| 168+ | 0.43 EUR |
| 177+ | 0.40 EUR |
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Technische Details YJG80G06A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 50A, Pulsed drain current: 320A, Power dissipation: 38W, Case: DFN5060-8, Gate-source voltage: ±20V, On-state resistance: 5mΩ, Mounting: SMD, Gate charge: 67nC, Kind of package: reel; tape, Kind of channel: enhancement.