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ZXMC10A816N8TA


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Technische Details ZXMC10A816N8TA

Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100V; 1.7A, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Kind of transistor: complementary pair, Drain-source voltage: 100V, Drain current: 1.7A, Pulsed drain current: 9.4A, Power dissipation: 1.3W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 0.17Ω, Mounting: SMD, Gate charge: 9.2nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

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ZXMC10A816N8TA ZXMC10A816N8TA Hersteller : DIODES INCORPORATED ZXMC10A816N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100V; 1.7A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 9.4A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ZXMC10A816N8TA ZXMC10A816N8TA Hersteller : DIODES INCORPORATED ZXMC10A816N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100V; 1.7A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 9.4A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar