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UF3C065040K3S UF3C065040K3S Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E56ED9F758BF&compId=UF3C065040K3S.pdf?ci_sign=2dca3be9dcade15b13a4f5e27ffb2c952ec4315f Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+37.74 EUR
3+35.68 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030B3 UJ3C065030B3 Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE987DFCA48602B58BF&compId=UJ3C065030B3.pdf?ci_sign=6dfd6de7c126be6c62f923ce61d86de51cb8895f Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 230A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 51nC
Version: ESD
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
3+30.47 EUR
10+29.32 EUR
Mindestbestellmenge: 3
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UJ3C065080B3 UJ3C065080B3 Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3CCD5355998BF&compId=UJ3C065080B3.pdf?ci_sign=b2daa116db7eb6315a6c1216c5691aea539ab52c Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 18.2A
Pulsed drain current: 65A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Version: ESD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06530TS UJ3D06530TS Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B878204C9513D7&compId=UJ3D06530TS.pdf?ci_sign=8d2b8888c36f783b95b22c59e3f09b4024c17052 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; UJ3D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 150A
Power dissipation: 67.3/288.5W
Manufacturer series: UJ3D
Produkt ist nicht verfügbar
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UJ3D1220KSD UJ3D1220KSD Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B87AC4FA2A33D7&compId=UJ3D1220KSD.pdf?ci_sign=db0e63ba3a96adae9740285a3af86a763a2ee60f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
UF3C065040K3S pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E56ED9F758BF&compId=UF3C065040K3S.pdf?ci_sign=2dca3be9dcade15b13a4f5e27ffb2c952ec4315f
UF3C065040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.74 EUR
3+35.68 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030B3 pVersion=0046&contRep=ZT&docId=005056AB82531EE987DFCA48602B58BF&compId=UJ3C065030B3.pdf?ci_sign=6dfd6de7c126be6c62f923ce61d86de51cb8895f
UJ3C065030B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 230A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 51nC
Version: ESD
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.47 EUR
10+29.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065080B3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3CCD5355998BF&compId=UJ3C065080B3.pdf?ci_sign=b2daa116db7eb6315a6c1216c5691aea539ab52c
UJ3C065080B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 18.2A
Pulsed drain current: 65A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Version: ESD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06530TS pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B878204C9513D7&compId=UJ3D06530TS.pdf?ci_sign=8d2b8888c36f783b95b22c59e3f09b4024c17052
UJ3D06530TS
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; UJ3D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 150A
Power dissipation: 67.3/288.5W
Manufacturer series: UJ3D
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220KSD pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B87AC4FA2A33D7&compId=UJ3D1220KSD.pdf?ci_sign=db0e63ba3a96adae9740285a3af86a763a2ee60f
UJ3D1220KSD
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH