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UF3C065040K3S UF3C065040K3S Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E56ED9F758BF&compId=UF3C065040K3S.pdf?ci_sign=2dca3be9dcade15b13a4f5e27ffb2c952ec4315f Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+37.77 EUR
3+35.69 EUR
Mindestbestellmenge: 2
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UJ2D1220K UJ2D1220K Qorvo (UnitedSiC) UJ2D1220K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 120A
Power dissipation: 60/272W
Manufacturer series: UJ2D
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
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UJ3C065030B3 UJ3C065030B3 Qorvo (UnitedSiC) UJ3C065030B3.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Technology: SiC
Mounting: SMD
Case: D2PAK
Power dissipation: 250W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
3+30.59 EUR
10+29.89 EUR
Mindestbestellmenge: 3
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UJ3C065030K3S UJ3C065030K3S Qorvo (UnitedSiC) UJ3C065030K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 441W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 30mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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UJ3C065080B3 UJ3C065080B3 Qorvo (UnitedSiC) UJ3C065080B3.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Technology: SiC
Mounting: SMD
Case: D2PAK
Power dissipation: 115W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.50 EUR
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UJ3C065080K3S UJ3C065080K3S Qorvo (UnitedSiC) UJ3C065080K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 190W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Drain-source voltage: 650V
Drain current: 23A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C120040K3S UJ3C120040K3S Qorvo (UnitedSiC) UJ3C120040K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 429W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±20V
Pulsed drain current: 175A
Drain-source voltage: 1.2kV
Drain current: 47A
On-state resistance: 35mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06530TS UJ3D06530TS Qorvo (UnitedSiC) UJ3D06530TS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; UJ3D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 150A
Power dissipation: 67.3/288.5W
Manufacturer series: UJ3D
Features of semiconductor devices: MPS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220KSD UJ3D1220KSD Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B87AC4FA2A33D7&compId=UJ3D1220KSD.pdf?ci_sign=db0e63ba3a96adae9740285a3af86a763a2ee60f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
UJD06504TS UJD06504TS Qorvo (UnitedSiC) UJD06504TS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 24A
Power dissipation: 9/71W
Manufacturer series: UJD
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.20 EUR
Mindestbestellmenge: 17
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UF3C065040K3S pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E56ED9F758BF&compId=UF3C065040K3S.pdf?ci_sign=2dca3be9dcade15b13a4f5e27ffb2c952ec4315f
UF3C065040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.77 EUR
3+35.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UJ2D1220K UJ2D1220K.pdf
UJ2D1220K
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 120A
Power dissipation: 60/272W
Manufacturer series: UJ2D
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030B3 UJ3C065030B3.pdf
UJ3C065030B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Technology: SiC
Mounting: SMD
Case: D2PAK
Power dissipation: 250W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.59 EUR
10+29.89 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030K3S UJ3C065030K3S.pdf
UJ3C065030K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 441W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 30mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065080B3 UJ3C065080B3.pdf
UJ3C065080B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Technology: SiC
Mounting: SMD
Case: D2PAK
Power dissipation: 115W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065080K3S UJ3C065080K3S.pdf
UJ3C065080K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 190W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Drain-source voltage: 650V
Drain current: 23A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C120040K3S UJ3C120040K3S.pdf
UJ3C120040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 429W
Version: ESD
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±20V
Pulsed drain current: 175A
Drain-source voltage: 1.2kV
Drain current: 47A
On-state resistance: 35mΩ
Type of transistor: N-JFET/N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D06530TS UJ3D06530TS.pdf
UJ3D06530TS
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; UJ3D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 150A
Power dissipation: 67.3/288.5W
Manufacturer series: UJ3D
Features of semiconductor devices: MPS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220KSD pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B87AC4FA2A33D7&compId=UJ3D1220KSD.pdf?ci_sign=db0e63ba3a96adae9740285a3af86a763a2ee60f
UJ3D1220KSD
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
UJD06504TS UJD06504TS.pdf
UJD06504TS
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 24A
Power dissipation: 9/71W
Manufacturer series: UJD
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.20 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH