Produkte > QORVO (UNITEDSIC) > Alle Produkte des Herstellers QORVO (UNITEDSIC) (29) > Seite 1 nach 1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
UF3C065030K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Case: TO247-3 Mounting: THT Features of semiconductor devices: ESD protected gate Technology: SiC Drain-source voltage: 650V Drain current: 62A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 51nC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UF3C065030K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Case: TO247-3 Mounting: THT Features of semiconductor devices: ESD protected gate Technology: SiC Drain-source voltage: 650V Drain current: 62A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 51nC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UF3C065030K4S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Case: TO247-4 Mounting: THT Features of semiconductor devices: ESD protected gate; Kelvin terminal Technology: SiC Drain-source voltage: 650V Drain current: 62A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 43nC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UF3C065030K4S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Case: TO247-4 Mounting: THT Features of semiconductor devices: ESD protected gate; Kelvin terminal Technology: SiC Drain-source voltage: 650V Drain current: 62A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 441W Polarisation: unipolar Gate charge: 43nC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UF3C065040K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 125A Power dissipation: 326W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UF3C065040K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 125A Power dissipation: 326W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UF3C065080K4S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 43nC Features of semiconductor devices: ESD protected gate; Kelvin terminal |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UF3C065080K4S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 43nC Features of semiconductor devices: ESD protected gate; Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UJ2D1220K | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Power dissipation: 60/272W Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 120A Max. forward voltage: 1.5V Manufacturer series: UJ2D |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UJ2D1220K | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Power dissipation: 60/272W Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 120A Max. forward voltage: 1.5V Manufacturer series: UJ2D Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UJ3C065030B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A Mounting: SMD Drain-source voltage: 650V Drain current: 47A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A Case: D2PAK |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UJ3C065030B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A Mounting: SMD Drain-source voltage: 650V Drain current: 47A On-state resistance: 27mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 230A Case: D2PAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UJ3C065030K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UJ3C065030K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UJ3C065030T3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UJ3C065030T3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UJ3C065080B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A Mounting: SMD Drain-source voltage: 650V Drain current: 18.2A On-state resistance: 80mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 115W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 65A Case: D2PAK |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UJ3C065080B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A Mounting: SMD Drain-source voltage: 650V Drain current: 18.2A On-state resistance: 80mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 115W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 65A Case: D2PAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UJ3C065080K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||
UJ3C065080K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||
UJ3C065080T3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UJ3C065080T3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UJ3C120040K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 1.2kV Drain current: 47A Pulsed drain current: 175A Power dissipation: 429W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||
UJ3C120040K3S | Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 1.2kV Drain current: 47A Pulsed drain current: 175A Power dissipation: 429W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||
UJ3D06530TS | Qorvo (UnitedSiC) | UJ3D06530TS THT Schottky diodes |
Produkt ist nicht verfügbar |
||||||||||
UJ3D1220KSD | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W Mounting: THT Manufacturer series: UJ3D Case: TO247-3 Power dissipation: 53.2/468.8W Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 220A |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UJ3D1220KSD | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W Mounting: THT Manufacturer series: UJ3D Case: TO247-3 Power dissipation: 53.2/468.8W Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 220A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||
UJD06504TS | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Power dissipation: 9/71W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 24A Max. forward voltage: 1.5V Manufacturer series: UJD |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
UJD06504TS | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Power dissipation: 9/71W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 24A Max. forward voltage: 1.5V Manufacturer series: UJD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
|
UF3C065030K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
UF3C065030K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
UF3C065030K4S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 71.16 EUR |
3+ | 70.91 EUR |
5+ | 68.43 EUR |
UF3C065030K4S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 71.16 EUR |
3+ | 70.91 EUR |
5+ | 68.43 EUR |
UF3C065040K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 49.05 EUR |
3+ | 48.49 EUR |
5+ | 47.16 EUR |
UF3C065040K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 49.05 EUR |
3+ | 48.49 EUR |
5+ | 47.16 EUR |
UF3C065080K4S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 31.25 EUR |
UF3C065080K4S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 31.25 EUR |
5+ | 30.96 EUR |
UJ2D1220K |
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 13.9 EUR |
UJ2D1220K |
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 13.9 EUR |
UJ3C065030B3 |
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 48.35 EUR |
UJ3C065030B3 |
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 48.35 EUR |
UJ3C065030K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 38.91 EUR |
10+ | 38.81 EUR |
UJ3C065030K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 38.91 EUR |
10+ | 38.81 EUR |
30+ | 37.44 EUR |
UJ3C065030T3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 39.6 EUR |
UJ3C065030T3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 39.6 EUR |
10+ | 39.4 EUR |
50+ | 38.07 EUR |
UJ3C065080B3 |
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
UJ3C065080B3 |
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
2+ | 35.75 EUR |
3+ | 23.84 EUR |
UJ3C065080K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
UJ3C065080K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
UJ3C065080T3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.74 EUR |
6+ | 13.94 EUR |
10+ | 13.9 EUR |
UJ3C065080T3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.74 EUR |
6+ | 13.94 EUR |
10+ | 13.9 EUR |
50+ | 13.43 EUR |
UJ3C120040K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
UJ3C120040K3S |
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
UJ3D06530TS |
Hersteller: Qorvo (UnitedSiC)
UJ3D06530TS THT Schottky diodes
UJ3D06530TS THT Schottky diodes
Produkt ist nicht verfügbar
UJ3D1220KSD |
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 19.16 EUR |
UJ3D1220KSD |
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 19.16 EUR |
UJD06504TS |
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.2 EUR |
UJD06504TS |
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.2 EUR |