Produkte > QORVO (UNITEDSIC) > Alle Produkte des Herstellers QORVO (UNITEDSIC) (2) > Seite 1 nach 1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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UF3C065040K3S | Qorvo (UnitedSiC) |
 Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A Mounting: THT Pulsed drain current: 125A Power dissipation: 326W Gate charge: 51nC Polarisation: unipolar Version: ESD Technology: SiC Drain current: 40A Drain-source voltage: 650V Kind of transistor: cascode Type of transistor: N-JFET / N-MOSFET Gate-source voltage: ±25V Case: TO247-3 On-state resistance: 42mΩ |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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UJ3C065030B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A Mounting: SMD Pulsed drain current: 230A Power dissipation: 250W Gate charge: 51nC Polarisation: unipolar Version: ESD Technology: SiC Drain current: 47A Drain-source voltage: 650V Kind of transistor: cascode Type of transistor: N-JFET / N-MOSFET Gate-source voltage: ±25V Case: D2PAK On-state resistance: 27mΩ |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| UF3C065040K3S |
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Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Mounting: THT
Pulsed drain current: 125A
Power dissipation: 326W
Gate charge: 51nC
Polarisation: unipolar
Version: ESD
Technology: SiC
Drain current: 40A
Drain-source voltage: 650V
Kind of transistor: cascode
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±25V
Case: TO247-3
On-state resistance: 42mΩ
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Mounting: THT
Pulsed drain current: 125A
Power dissipation: 326W
Gate charge: 51nC
Polarisation: unipolar
Version: ESD
Technology: SiC
Drain current: 40A
Drain-source voltage: 650V
Kind of transistor: cascode
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±25V
Case: TO247-3
On-state resistance: 42mΩ
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 52.68 EUR |
| 3+ | 48.6 EUR |
| UJ3C065030B3 |
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Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Pulsed drain current: 230A
Power dissipation: 250W
Gate charge: 51nC
Polarisation: unipolar
Version: ESD
Technology: SiC
Drain current: 47A
Drain-source voltage: 650V
Kind of transistor: cascode
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±25V
Case: D2PAK
On-state resistance: 27mΩ
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Pulsed drain current: 230A
Power dissipation: 250W
Gate charge: 51nC
Polarisation: unipolar
Version: ESD
Technology: SiC
Drain current: 47A
Drain-source voltage: 650V
Kind of transistor: cascode
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±25V
Case: D2PAK
On-state resistance: 27mΩ
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 34.47 EUR |