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UF3C065040K3S UF3C065040K3S Qorvo (UnitedSiC) UF3C065040K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.27 EUR
3+40.84 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030B3 UJ3C065030B3 Qorvo (UnitedSiC) UJ3C065030B3.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 230A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 51nC
Version: ESD
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
3+29.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065080B3 UJ3C065080B3 Qorvo (UnitedSiC) UJ3C065080B3.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 18.2A
Pulsed drain current: 65A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Version: ESD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF3C065040K3S UF3C065040K3S.pdf
UF3C065040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.27 EUR
3+40.84 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030B3 UJ3C065030B3.pdf
UJ3C065030B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 230A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 51nC
Version: ESD
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065080B3 UJ3C065080B3.pdf
UJ3C065080B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 18.2A
Pulsed drain current: 65A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Version: ESD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH