Produkte > QORVO (UNITEDSIC) > Alle Produkte des Herstellers QORVO (UNITEDSIC) (2) > Seite 1 nach 1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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UF3C065040K3S | Qorvo (UnitedSiC) |
 Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 125A Power dissipation: 326W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 51nC Version: ESD |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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UJ3C065080B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A Technology: SiC Mounting: SMD Case: D2PAK Gate charge: 51nC On-state resistance: 80mΩ Drain current: 18.2A Gate-source voltage: ±25V Power dissipation: 115W Pulsed drain current: 65A Drain-source voltage: 650V Version: ESD Type of transistor: N-JFET / N-MOSFET Kind of transistor: cascode Polarisation: unipolar |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| UF3C065040K3S |
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Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 52.68 EUR |
| 3+ | 48.6 EUR |
| UJ3C065080B3 |
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Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Technology: SiC
Mounting: SMD
Case: D2PAK
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 18.2A
Gate-source voltage: ±25V
Power dissipation: 115W
Pulsed drain current: 65A
Drain-source voltage: 650V
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Technology: SiC
Mounting: SMD
Case: D2PAK
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 18.2A
Gate-source voltage: ±25V
Power dissipation: 115W
Pulsed drain current: 65A
Drain-source voltage: 650V
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |