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UF3C065040K3S UF3C065040K3S Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E56ED9F758BF&compId=UF3C065040K3S.pdf?ci_sign=2dca3be9dcade15b13a4f5e27ffb2c952ec4315f Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Kind of transistor: cascode
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.27 EUR
3+40.84 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UF3C065040K3S UF3C065040K3S Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E56ED9F758BF&compId=UF3C065040K3S.pdf?ci_sign=2dca3be9dcade15b13a4f5e27ffb2c952ec4315f Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Kind of transistor: cascode
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
2+44.27 EUR
3+40.84 EUR
5+39.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UJ2D1220K Qorvo (UnitedSiC) UJ2D1220K THT Schottky diodes
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.21 EUR
30+9.28 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030B3 UJ3C065030B3 Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE987DFCA48602B58BF&compId=UJ3C065030B3.pdf?ci_sign=6dfd6de7c126be6c62f923ce61d86de51cb8895f Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 27mΩ
Drain current: 47A
Gate-source voltage: ±25V
Pulsed drain current: 230A
Power dissipation: 250W
Drain-source voltage: 650V
Case: D2PAK
Kind of transistor: cascode
Version: ESD
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
3+29.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030B3 UJ3C065030B3 Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE987DFCA48602B58BF&compId=UJ3C065030B3.pdf?ci_sign=6dfd6de7c126be6c62f923ce61d86de51cb8895f Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 27mΩ
Drain current: 47A
Gate-source voltage: ±25V
Pulsed drain current: 230A
Power dissipation: 250W
Drain-source voltage: 650V
Case: D2PAK
Kind of transistor: cascode
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
3+29.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065080B3 UJ3C065080B3 Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3CCD5355998BF&compId=UJ3C065080B3.pdf?ci_sign=b2daa116db7eb6315a6c1216c5691aea539ab52c Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 18.2A
Gate-source voltage: ±25V
Pulsed drain current: 65A
Power dissipation: 115W
Drain-source voltage: 650V
Case: D2PAK
Kind of transistor: cascode
Version: ESD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065080B3 UJ3C065080B3 Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3CCD5355998BF&compId=UJ3C065080B3.pdf?ci_sign=b2daa116db7eb6315a6c1216c5691aea539ab52c Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 18.2A
Gate-source voltage: ±25V
Pulsed drain current: 65A
Power dissipation: 115W
Drain-source voltage: 650V
Case: D2PAK
Kind of transistor: cascode
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220KSD UJ3D1220KSD Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B87AC4FA2A33D7&compId=UJ3D1220KSD.pdf?ci_sign=db0e63ba3a96adae9740285a3af86a763a2ee60f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 220A
Power dissipation: 53.2/468.8W
Max. off-state voltage: 1.2kV
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220KSD UJ3D1220KSD Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B87AC4FA2A33D7&compId=UJ3D1220KSD.pdf?ci_sign=db0e63ba3a96adae9740285a3af86a763a2ee60f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 220A
Power dissipation: 53.2/468.8W
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
UJD06504TS UJD06504TS Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E0936100F4E749&compId=UJD06504TS.pdf?ci_sign=f80cae7630946ab6b3704350302ecc9309e6e1e8 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.5V
Manufacturer series: UJD
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Max. forward voltage: 1.5V
Load current: 4A
Power dissipation: 9/71W
Max. forward impulse current: 24A
Max. off-state voltage: 650V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
UJD06504TS UJD06504TS Qorvo (UnitedSiC) pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E0936100F4E749&compId=UJD06504TS.pdf?ci_sign=f80cae7630946ab6b3704350302ecc9309e6e1e8 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.5V
Manufacturer series: UJD
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Max. forward voltage: 1.5V
Load current: 4A
Power dissipation: 9/71W
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.21 EUR
10+7.15 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
UF3C065040K3S pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E56ED9F758BF&compId=UF3C065040K3S.pdf?ci_sign=2dca3be9dcade15b13a4f5e27ffb2c952ec4315f
UF3C065040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Kind of transistor: cascode
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.27 EUR
3+40.84 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UF3C065040K3S pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E56ED9F758BF&compId=UF3C065040K3S.pdf?ci_sign=2dca3be9dcade15b13a4f5e27ffb2c952ec4315f
UF3C065040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Kind of transistor: cascode
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+44.27 EUR
3+40.84 EUR
5+39.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UJ2D1220K
Hersteller: Qorvo (UnitedSiC)
UJ2D1220K THT Schottky diodes
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.21 EUR
30+9.28 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030B3 pVersion=0046&contRep=ZT&docId=005056AB82531EE987DFCA48602B58BF&compId=UJ3C065030B3.pdf?ci_sign=6dfd6de7c126be6c62f923ce61d86de51cb8895f
UJ3C065030B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 27mΩ
Drain current: 47A
Gate-source voltage: ±25V
Pulsed drain current: 230A
Power dissipation: 250W
Drain-source voltage: 650V
Case: D2PAK
Kind of transistor: cascode
Version: ESD
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065030B3 pVersion=0046&contRep=ZT&docId=005056AB82531EE987DFCA48602B58BF&compId=UJ3C065030B3.pdf?ci_sign=6dfd6de7c126be6c62f923ce61d86de51cb8895f
UJ3C065030B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 27mΩ
Drain current: 47A
Gate-source voltage: ±25V
Pulsed drain current: 230A
Power dissipation: 250W
Drain-source voltage: 650V
Case: D2PAK
Kind of transistor: cascode
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+29.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065080B3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3CCD5355998BF&compId=UJ3C065080B3.pdf?ci_sign=b2daa116db7eb6315a6c1216c5691aea539ab52c
UJ3C065080B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 18.2A
Gate-source voltage: ±25V
Pulsed drain current: 65A
Power dissipation: 115W
Drain-source voltage: 650V
Case: D2PAK
Kind of transistor: cascode
Version: ESD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3C065080B3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3CCD5355998BF&compId=UJ3C065080B3.pdf?ci_sign=b2daa116db7eb6315a6c1216c5691aea539ab52c
UJ3C065080B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 18.2A
Gate-source voltage: ±25V
Pulsed drain current: 65A
Power dissipation: 115W
Drain-source voltage: 650V
Case: D2PAK
Kind of transistor: cascode
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220KSD pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B87AC4FA2A33D7&compId=UJ3D1220KSD.pdf?ci_sign=db0e63ba3a96adae9740285a3af86a763a2ee60f
UJ3D1220KSD
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 220A
Power dissipation: 53.2/468.8W
Max. off-state voltage: 1.2kV
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
UJ3D1220KSD pVersion=0046&contRep=ZT&docId=005056AB752F1EE897B87AC4FA2A33D7&compId=UJ3D1220KSD.pdf?ci_sign=db0e63ba3a96adae9740285a3af86a763a2ee60f
UJ3D1220KSD
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 220A
Power dissipation: 53.2/468.8W
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
UJD06504TS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E0936100F4E749&compId=UJD06504TS.pdf?ci_sign=f80cae7630946ab6b3704350302ecc9309e6e1e8
UJD06504TS
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.5V
Manufacturer series: UJD
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Max. forward voltage: 1.5V
Load current: 4A
Power dissipation: 9/71W
Max. forward impulse current: 24A
Max. off-state voltage: 650V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
UJD06504TS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E0936100F4E749&compId=UJD06504TS.pdf?ci_sign=f80cae7630946ab6b3704350302ecc9309e6e1e8
UJD06504TS
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.5V
Manufacturer series: UJD
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Max. forward voltage: 1.5V
Load current: 4A
Power dissipation: 9/71W
Max. forward impulse current: 24A
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.21 EUR
10+7.15 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH