Produkte > QORVO (UNITEDSIC) > Alle Produkte des Herstellers QORVO (UNITEDSIC) (4) > Seite 1 nach 1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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UF3C065040K3S | Qorvo (UnitedSiC) |
 Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A Type of transistor: N-JFET / N-MOSFET Polarisation: unipolar Drain current: 40A Power dissipation: 326W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Pulsed drain current: 125A Gate charge: 51nC Version: ESD Technology: SiC Drain-source voltage: 650V Kind of transistor: cascode |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
UJ2D1220K | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ2D Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.5V Max. forward impulse current: 120A Power dissipation: 60/272W Manufacturer series: UJ2D |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
UJ3C065030B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A Type of transistor: N-JFET / N-MOSFET Polarisation: unipolar Drain current: 47A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: SMD Pulsed drain current: 230A Gate charge: 51nC Version: ESD Technology: SiC Drain-source voltage: 650V Kind of transistor: cascode |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
UJD06504TS | Qorvo (UnitedSiC) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.5V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 24A Power dissipation: 9/71W Manufacturer series: UJD |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| UF3C065040K3S |
|
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Polarisation: unipolar
Drain current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Pulsed drain current: 125A
Gate charge: 51nC
Version: ESD
Technology: SiC
Drain-source voltage: 650V
Kind of transistor: cascode
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET / N-MOSFET
Polarisation: unipolar
Drain current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Pulsed drain current: 125A
Gate charge: 51nC
Version: ESD
Technology: SiC
Drain-source voltage: 650V
Kind of transistor: cascode
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| UJ2D1220K |
|
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 120A
Power dissipation: 60/272W
Manufacturer series: UJ2D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 120A
Power dissipation: 60/272W
Manufacturer series: UJ2D
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| UJ3C065030B3 |
|
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Type of transistor: N-JFET / N-MOSFET
Polarisation: unipolar
Drain current: 47A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: SMD
Pulsed drain current: 230A
Gate charge: 51nC
Version: ESD
Technology: SiC
Drain-source voltage: 650V
Kind of transistor: cascode
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Type of transistor: N-JFET / N-MOSFET
Polarisation: unipolar
Drain current: 47A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: SMD
Pulsed drain current: 230A
Gate charge: 51nC
Version: ESD
Technology: SiC
Drain-source voltage: 650V
Kind of transistor: cascode
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| UJD06504TS |
|
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 24A
Power dissipation: 9/71W
Manufacturer series: UJD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 24A
Power dissipation: 9/71W
Manufacturer series: UJD
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)