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UF3C065030K3S UF3C065030K3S Qorvo (UnitedSiC) UF3C065030K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
UF3C065030K3S UF3C065030K3S Qorvo (UnitedSiC) UF3C065030K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
UF3C065030K4S UF3C065030K4S Qorvo (UnitedSiC) UF3C065030K4S.PDF Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
2+71.16 EUR
3+ 70.91 EUR
5+ 68.43 EUR
Mindestbestellmenge: 2
UF3C065030K4S UF3C065030K4S Qorvo (UnitedSiC) UF3C065030K4S.PDF Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
2+71.16 EUR
3+ 70.91 EUR
5+ 68.43 EUR
Mindestbestellmenge: 2
UF3C065040K3S UF3C065040K3S Qorvo (UnitedSiC) UF3C065040K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
2+49.05 EUR
3+ 48.49 EUR
5+ 47.16 EUR
Mindestbestellmenge: 2
UF3C065040K3S UF3C065040K3S Qorvo (UnitedSiC) UF3C065040K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
2+49.05 EUR
3+ 48.49 EUR
5+ 47.16 EUR
Mindestbestellmenge: 2
UF3C065080K4S UF3C065080K4S Qorvo (UnitedSiC) UF3C065080K4S.PDF Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
3+31.25 EUR
Mindestbestellmenge: 3
UF3C065080K4S UF3C065080K4S Qorvo (UnitedSiC) UF3C065080K4S.PDF Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
3+31.25 EUR
5+ 30.96 EUR
Mindestbestellmenge: 3
UJ2D1220K UJ2D1220K Qorvo (UnitedSiC) UJ2D1220K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.9 EUR
Mindestbestellmenge: 6
UJ2D1220K UJ2D1220K Qorvo (UnitedSiC) UJ2D1220K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.9 EUR
Mindestbestellmenge: 6
UJ3C065030B3 UJ3C065030B3 Qorvo (UnitedSiC) UJ3C065030B3.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
2+48.35 EUR
Mindestbestellmenge: 2
UJ3C065030B3 UJ3C065030B3 Qorvo (UnitedSiC) UJ3C065030B3.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
2+48.35 EUR
Mindestbestellmenge: 2
UJ3C065030K3S UJ3C065030K3S Qorvo (UnitedSiC) UJ3C065030K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
2+38.91 EUR
10+ 38.81 EUR
Mindestbestellmenge: 2
UJ3C065030K3S UJ3C065030K3S Qorvo (UnitedSiC) UJ3C065030K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
2+38.91 EUR
10+ 38.81 EUR
30+ 37.44 EUR
Mindestbestellmenge: 2
UJ3C065030T3S UJ3C065030T3S Qorvo (UnitedSiC) UJ3C065030T3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
2+39.6 EUR
Mindestbestellmenge: 2
UJ3C065030T3S UJ3C065030T3S Qorvo (UnitedSiC) UJ3C065030T3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
2+39.6 EUR
10+ 39.4 EUR
50+ 38.07 EUR
Mindestbestellmenge: 2
UJ3C065080B3 UJ3C065080B3 Qorvo (UnitedSiC) UJ3C065080B3.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
UJ3C065080B3 UJ3C065080B3 Qorvo (UnitedSiC) UJ3C065080B3.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
2+ 35.75 EUR
3+ 23.84 EUR
UJ3C065080K3S UJ3C065080K3S Qorvo (UnitedSiC) UJ3C065080K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
UJ3C065080K3S UJ3C065080K3S Qorvo (UnitedSiC) UJ3C065080K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
UJ3C065080T3S UJ3C065080T3S Qorvo (UnitedSiC) UJ3C065080T3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.74 EUR
6+ 13.94 EUR
10+ 13.9 EUR
Mindestbestellmenge: 5
UJ3C065080T3S UJ3C065080T3S Qorvo (UnitedSiC) UJ3C065080T3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.74 EUR
6+ 13.94 EUR
10+ 13.9 EUR
50+ 13.43 EUR
Mindestbestellmenge: 5
UJ3C120040K3S UJ3C120040K3S Qorvo (UnitedSiC) UJ3C120040K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
UJ3C120040K3S UJ3C120040K3S Qorvo (UnitedSiC) UJ3C120040K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
UJ3D06530TS Qorvo (UnitedSiC) DS_UJ3D06530TS.pdf UJ3D06530TS THT Schottky diodes
Produkt ist nicht verfügbar
UJ3D1220KSD UJ3D1220KSD Qorvo (UnitedSiC) UJ3D1220KSD.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.16 EUR
Mindestbestellmenge: 4
UJ3D1220KSD UJ3D1220KSD Qorvo (UnitedSiC) UJ3D1220KSD.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
4+19.16 EUR
Mindestbestellmenge: 4
UJD06504TS UJD06504TS Qorvo (UnitedSiC) UJD06504TS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.2 EUR
Mindestbestellmenge: 17
UJD06504TS UJD06504TS Qorvo (UnitedSiC) UJD06504TS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.2 EUR
Mindestbestellmenge: 17
UF3C065030K3S UF3C065030K3S.pdf
UF3C065030K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
UF3C065030K3S UF3C065030K3S.pdf
UF3C065030K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-3
Mounting: THT
Features of semiconductor devices: ESD protected gate
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 51nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
UF3C065030K4S UF3C065030K4S.PDF
UF3C065030K4S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+71.16 EUR
3+ 70.91 EUR
5+ 68.43 EUR
Mindestbestellmenge: 2
UF3C065030K4S UF3C065030K4S.PDF
UF3C065030K4S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Case: TO247-4
Mounting: THT
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Technology: SiC
Drain-source voltage: 650V
Drain current: 62A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 43nC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+71.16 EUR
3+ 70.91 EUR
5+ 68.43 EUR
Mindestbestellmenge: 2
UF3C065040K3S UF3C065040K3S.pdf
UF3C065040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+49.05 EUR
3+ 48.49 EUR
5+ 47.16 EUR
Mindestbestellmenge: 2
UF3C065040K3S UF3C065040K3S.pdf
UF3C065040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 40A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 125A
Power dissipation: 326W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+49.05 EUR
3+ 48.49 EUR
5+ 47.16 EUR
Mindestbestellmenge: 2
UF3C065080K4S UF3C065080K4S.PDF
UF3C065080K4S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+31.25 EUR
Mindestbestellmenge: 3
UF3C065080K4S UF3C065080K4S.PDF
UF3C065080K4S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 43nC
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+31.25 EUR
5+ 30.96 EUR
Mindestbestellmenge: 3
UJ2D1220K UJ2D1220K.pdf
UJ2D1220K
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+13.9 EUR
Mindestbestellmenge: 6
UJ2D1220K UJ2D1220K.pdf
UJ2D1220K
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60/272W; UJ2D
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Power dissipation: 60/272W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 120A
Max. forward voltage: 1.5V
Manufacturer series: UJ2D
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+13.9 EUR
Mindestbestellmenge: 6
UJ3C065030B3 UJ3C065030B3.pdf
UJ3C065030B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+48.35 EUR
Mindestbestellmenge: 2
UJ3C065030B3 UJ3C065030B3.pdf
UJ3C065030B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 47A
On-state resistance: 27mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 230A
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+48.35 EUR
Mindestbestellmenge: 2
UJ3C065030K3S UJ3C065030K3S.pdf
UJ3C065030K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+38.91 EUR
10+ 38.81 EUR
Mindestbestellmenge: 2
UJ3C065030K3S UJ3C065030K3S.pdf
UJ3C065030K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+38.91 EUR
10+ 38.81 EUR
30+ 37.44 EUR
Mindestbestellmenge: 2
UJ3C065030T3S UJ3C065030T3S.pdf
UJ3C065030T3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+39.6 EUR
Mindestbestellmenge: 2
UJ3C065030T3S UJ3C065030T3S.pdf
UJ3C065030T3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+39.6 EUR
10+ 39.4 EUR
50+ 38.07 EUR
Mindestbestellmenge: 2
UJ3C065080B3 UJ3C065080B3.pdf
UJ3C065080B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
UJ3C065080B3 UJ3C065080B3.pdf
UJ3C065080B3
Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Mounting: SMD
Drain-source voltage: 650V
Drain current: 18.2A
On-state resistance: 80mΩ
Type of transistor: N-JFET/N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 51nC
Technology: SiC
Kind of transistor: cascode
Gate-source voltage: ±25V
Pulsed drain current: 65A
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
2+ 35.75 EUR
3+ 23.84 EUR
UJ3C065080K3S UJ3C065080K3S.pdf
UJ3C065080K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
UJ3C065080K3S UJ3C065080K3S.pdf
UJ3C065080K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
UJ3C065080T3S UJ3C065080T3S.pdf
UJ3C065080T3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.74 EUR
6+ 13.94 EUR
10+ 13.9 EUR
Mindestbestellmenge: 5
UJ3C065080T3S UJ3C065080T3S.pdf
UJ3C065080T3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.74 EUR
6+ 13.94 EUR
10+ 13.9 EUR
50+ 13.43 EUR
Mindestbestellmenge: 5
UJ3C120040K3S UJ3C120040K3S.pdf
UJ3C120040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
UJ3C120040K3S UJ3C120040K3S.pdf
UJ3C120040K3S
Hersteller: Qorvo (UnitedSiC)
Category: THT N channel transistors
Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 1.2kV; 47A
Type of transistor: N-JFET/N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 47A
Pulsed drain current: 175A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
UJ3D06530TS DS_UJ3D06530TS.pdf
Hersteller: Qorvo (UnitedSiC)
UJ3D06530TS THT Schottky diodes
Produkt ist nicht verfügbar
UJ3D1220KSD UJ3D1220KSD.pdf
UJ3D1220KSD
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+19.16 EUR
Mindestbestellmenge: 4
UJ3D1220KSD UJ3D1220KSD.pdf
UJ3D1220KSD
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 53.2/468.8W
Mounting: THT
Manufacturer series: UJ3D
Case: TO247-3
Power dissipation: 53.2/468.8W
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 220A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+19.16 EUR
Mindestbestellmenge: 4
UJD06504TS UJD06504TS.pdf
UJD06504TS
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
17+4.2 EUR
Mindestbestellmenge: 17
UJD06504TS UJD06504TS.pdf
UJD06504TS
Hersteller: Qorvo (UnitedSiC)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 9/71W; TO220-2; UJD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 9/71W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 24A
Max. forward voltage: 1.5V
Manufacturer series: UJD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.2 EUR
Mindestbestellmenge: 17