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BM1R00148F-E2 BM1R00148F-E2 Rohm Semiconductor datasheet?p=BM1R00148F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH EFFICIENCY AND LOW STANDBY
Voltage - Start Up: 2.3 V
Fault Protection: Over Voltage
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 32V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 120V
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BM1R00148F-E2 BM1R00148F-E2 Rohm Semiconductor datasheet?p=BM1R00148F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH EFFICIENCY AND LOW STANDBY
Voltage - Start Up: 2.3 V
Fault Protection: Over Voltage
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 32V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 120V
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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4+5.16 EUR
10+3.27 EUR
25+2.78 EUR
100+2.22 EUR
250+1.95 EUR
500+1.78 EUR
1000+1.64 EUR
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BM1R00146F-E2 BM1R00146F-E2 Rohm Semiconductor datasheet?p=BM1R00146F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH EFFICIENCY AND LOW STANDBY
Voltage - Start Up: 2.3 V
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 32V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 120V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BM1R00146F-E2 BM1R00146F-E2 Rohm Semiconductor datasheet?p=BM1R00146F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH EFFICIENCY AND LOW STANDBY
Voltage - Start Up: 2.3 V
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 32V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 120V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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10+3.27 EUR
25+2.78 EUR
100+2.22 EUR
250+1.95 EUR
500+1.78 EUR
1000+1.64 EUR
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SDR03EZPF15R0 SDR03EZPF15R0 Rohm Semiconductor sdr-e.pdf Description: RES SMD 15 OHM 1% 0.3W 0603
Resistance: 15 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
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SDR03EZPF15R0 SDR03EZPF15R0 Rohm Semiconductor sdr-e.pdf Description: RES SMD 15 OHM 1% 0.3W 0603
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 Ohms
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188+0.094 EUR
223+0.079 EUR
264+0.067 EUR
316+0.056 EUR
500+0.049 EUR
1000+0.044 EUR
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SFR01MZPF1603 SFR01MZPF1603 Rohm Semiconductor sfr-e.pdf Description: RES 160K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 160 kOhms
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SFR01MZPF1603 SFR01MZPF1603 Rohm Semiconductor sfr-e.pdf Description: RES 160K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 160 kOhms
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302+0.058 EUR
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1000+0.037 EUR
5000+0.028 EUR
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SFR01MZPJ164 SFR01MZPJ164 Rohm Semiconductor sfr-e.pdf Description: RES 160K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 160 kOhms
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SFR01MZPJ164 SFR01MZPJ164 Rohm Semiconductor sfr-e.pdf Description: RES 160K OHM 5% 1/16W 0402
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
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189+0.093 EUR
354+0.05 EUR
1000+0.031 EUR
2500+0.027 EUR
5000+0.024 EUR
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ESR01MZPJ164 ESR01MZPJ164 Rohm Semiconductor esr-e.pdf Description: RES 160K OHM 5% 1/5W 0402
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
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ESR01MZPJ164 ESR01MZPJ164 Rohm Semiconductor esr-e.pdf Description: RES 160K OHM 5% 1/5W 0402
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
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ESR01MZPF1603 ESR01MZPF1603 Rohm Semiconductor esr-e.pdf Description: RES 160K OHM 1% 1/5W 0402
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
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ESR01MZPF1603 ESR01MZPF1603 Rohm Semiconductor esr-e.pdf Description: RES 160K OHM 1% 1/5W 0402
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
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38+0.48 EUR
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RB520ASA-30FHT2RB RB520ASA-30FHT2RB Rohm Semiconductor rb520asa-30fht2rb-e.pdf Description: DIODE SCHOTT 30V 200MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
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RB520ASA-30FHT2RB RB520ASA-30FHT2RB Rohm Semiconductor rb520asa-30fht2rb-e.pdf Description: DIODE SCHOTT 30V 200MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Cut Tape (CT)
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30+0.6 EUR
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500+0.22 EUR
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RB521ASA-30FHT2RB RB521ASA-30FHT2RB Rohm Semiconductor rb521asa-30fht2rb-e.pdf Description: DIODE SCHOTT 30V 200MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 125°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
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RB521ASA-30FHT2RB RB521ASA-30FHT2RB Rohm Semiconductor rb521asa-30fht2rb-e.pdf Description: DIODE SCHOTT 30V 200MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 125°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Cut Tape (CT)
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37+0.48 EUR
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500+0.24 EUR
1000+0.2 EUR
2000+0.19 EUR
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RB550ASA-30FHT2RB RB550ASA-30FHT2RB Rohm Semiconductor rb550asa-30fht2rb-e.pdf Description: DIODE SCHOTT 30V 500MA DFN10062W
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2W
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RB550ASA-30FHT2RB RB550ASA-30FHT2RB Rohm Semiconductor rb550asa-30fht2rb-e.pdf Description: DIODE SCHOTT 30V 500MA DFN10062W
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
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RB551ASA-30FHT2RB RB551ASA-30FHT2RB Rohm Semiconductor rb551asa-30fht2rb-e.pdf Description: DIODE SCHOTT 20V 500MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: 125°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
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RB551ASA-30FHT2RB RB551ASA-30FHT2RB Rohm Semiconductor rb551asa-30fht2rb-e.pdf Description: DIODE SCHOTT 20V 500MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: 125°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Cut Tape (CT)
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BD5320NVX-2CTL BD5320NVX-2CTL Rohm Semiconductor datasheet?p=BD5320NVX-2C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NANO ENERGY, 2.0V, ADJUSTABLE DE
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 2V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD5320NVX-2CTL BD5320NVX-2CTL Rohm Semiconductor datasheet?p=BD5320NVX-2C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NANO ENERGY, 2.0V, ADJUSTABLE DE
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 2V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
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31+0.58 EUR
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1000+0.39 EUR
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HP8MC5TB1 HP8MC5TB1 Rohm Semiconductor datasheet?p=HP8MC5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N/P-CH 60V 4.5A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 20W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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HP8MC5TB1 HP8MC5TB1 Rohm Semiconductor datasheet?p=HP8MC5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N/P-CH 60V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
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6+3.22 EUR
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100+1.38 EUR
500+1.1 EUR
1000+1 EUR
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HP8KE7TB1 HP8KE7TB1 Rohm Semiconductor hp8ke7tb1-e.pdf Description: MOSFET 2N-CH 100V 10A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
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HP8KE7TB1 HP8KE7TB1 Rohm Semiconductor hp8ke7tb1-e.pdf Description: MOSFET 2N-CH 100V 10A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2465 Stücke:
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500+2.16 EUR
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HP8JE5TB1 HP8JE5TB1 Rohm Semiconductor datasheet?p=HP8JE5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET 2P-CH 100V 4.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Produkt ist nicht verfügbar
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HP8JE5TB1 HP8JE5TB1 Rohm Semiconductor datasheet?p=HP8JE5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET 2P-CH 100V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
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RQ5P035BGTCL RQ5P035BGTCL Rohm Semiconductor rq5p035bgtcl-e.pdf Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Produkt ist nicht verfügbar
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RQ5P035BGTCL RQ5P035BGTCL Rohm Semiconductor rq5p035bgtcl-e.pdf Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
auf Bestellung 1139 Stücke:
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100+0.61 EUR
500+0.47 EUR
1000+0.42 EUR
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LTR18EZPF20R0 LTR18EZPF20R0 Rohm Semiconductor ltr-e.pdf Description: RES SMD 20 OHM 1% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
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LTR18EZPF20R0 LTR18EZPF20R0 Rohm Semiconductor ltr-e.pdf Description: RES SMD 20 OHM 1% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
auf Bestellung 1429 Stücke:
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59+0.3 EUR
115+0.15 EUR
148+0.12 EUR
172+0.1 EUR
200+0.088 EUR
250+0.074 EUR
500+0.066 EUR
1000+0.059 EUR
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KTR03EZPF6042 KTR03EZPF6042 Rohm Semiconductor ktr-e.pdf Description: RES SMD 60.4K OHM 1% 1/10W 0603
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
Resistance: 60.4 kOhms
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KTR03EZPF6042 KTR03EZPF6042 Rohm Semiconductor ktr-e.pdf Description: RES SMD 60.4K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 60.4 kOhms
auf Bestellung 4919 Stücke:
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190+0.093 EUR
224+0.079 EUR
500+0.057 EUR
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RB058L-30DDTE25 RB058L-30DDTE25 Rohm Semiconductor Description: SUPER LOW IR, 30V 3A, SINGLE, DO
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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RB058L-30DDTE25 RB058L-30DDTE25 Rohm Semiconductor Description: SUPER LOW IR, 30V 3A, SINGLE, DO
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
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18+1 EUR
20+0.88 EUR
25+0.83 EUR
100+0.67 EUR
250+0.63 EUR
500+0.53 EUR
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SLA580BCT3F SLA580BCT3F Rohm Semiconductor datasheet?p=SLA580BCT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE CLEAR T-1 3/4 T/H
Lens Size: 5mm, T-1 3/4
Lens Style: Round with Domed Top
Lens Transparency: Clear
Supplier Device Package: T-1 3/4
Wavelength - Dominant: 470nm
Height (Max): 8.70mm
Viewing Angle: 10°
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 3.3V
Configuration: Standard
Millicandela Rating: 2500mcd
Mounting Type: Through Hole
Color: Blue
Package / Case: Radial
Packaging: Bulk
Produkt ist nicht verfügbar
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SFR01MZPF6040 SFR01MZPF6040 Rohm Semiconductor sfr-e.pdf Description: RES SMD 604 OHM 1% 1/10W 0402
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 604 Ohms
Produkt ist nicht verfügbar
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SDR10EZPJ152 SDR10EZPJ152 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 kOhms
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5000+0.017 EUR
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SDR10EZPJ152 SDR10EZPJ152 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 kOhms
auf Bestellung 8859 Stücke:
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53+0.33 EUR
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182+0.097 EUR
500+0.07 EUR
1000+0.062 EUR
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KTR03EZPF6810 KTR03EZPF6810 Rohm Semiconductor ktr-e.pdf Description: HIGH VOLTAGE RESISTANCE CHIP RES
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
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KTR03EZPF6810 KTR03EZPF6810 Rohm Semiconductor ktr-e.pdf Description: HIGH VOLTAGE RESISTANCE CHIP RES
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
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67+0.26 EUR
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500+0.056 EUR
1000+0.049 EUR
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SFR01MZPF6810 SFR01MZPF6810 Rohm Semiconductor sfr-e.pdf Description: RES SMD 681 OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 681 Ohms
Produkt ist nicht verfügbar
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SFR03EZPF6810 SFR03EZPF6810 Rohm Semiconductor sfr-e.pdf Description: RES SMD 681 OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
Produkt ist nicht verfügbar
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SFR18EZPF6810 SFR18EZPF6810 Rohm Semiconductor sfr-e.pdf Description: RES SMD 681 OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 681 Ohms
Produkt ist nicht verfügbar
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SDR03EZPF2R70 SDR03EZPF2R70 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.7 Ohms
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SDR03EZPF2R70 SDR03EZPF2R70 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.7 Ohms
auf Bestellung 9548 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
130+0.14 EUR
193+0.092 EUR
226+0.078 EUR
500+0.056 EUR
1000+0.049 EUR
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SDR10EZPF2R70 SDR10EZPF2R70 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
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5000+0.021 EUR
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SDR10EZPF2R70 SDR10EZPF2R70 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
auf Bestellung 14775 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
87+0.2 EUR
128+0.14 EUR
149+0.12 EUR
500+0.087 EUR
1000+0.077 EUR
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RX3L07BGNC16 RX3L07BGNC16 Rohm Semiconductor datasheet?p=RX3L07BGN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 70A, TO-220AB, POWER MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
auf Bestellung 1310 Stücke:
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SLI-580UT3F SLI-580UT3F Rohm Semiconductor datasheet?p=SLI-580UT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED RED CLEAR T-1 3/4 T/H
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 5000mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 10°
Height (Max): 8.70mm
Wavelength - Dominant: 620nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
auf Bestellung 2555 Stücke:
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19+0.93 EUR
28+0.65 EUR
100+0.47 EUR
500+0.39 EUR
1000+0.36 EUR
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PDZVTR9.1B PDZVTR9.1B Rohm Semiconductor datasheet?p=PDZV9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 9.65V 1W PMDTM
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Power - Max: 1 W
Supplier Device Package: PMDTM
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.65 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±5.7%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PDZVTR9.1B PDZVTR9.1B Rohm Semiconductor datasheet?p=PDZV9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 9.65V 1W PMDTM
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.65 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±5.7%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Power - Max: 1 W
Supplier Device Package: PMDTM
auf Bestellung 2168 Stücke:
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500+0.3 EUR
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PTZTFTE259.1B PTZTFTE259.1B Rohm Semiconductor datasheet?p=PTZTF9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 9.65V 1W PMDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.65 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.7%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTZTFTE259.1B PTZTFTE259.1B Rohm Semiconductor datasheet?p=PTZTF9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 9.65V 1W PMDS
Tolerance: ±5.7%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Qualification: AEC-Q101
auf Bestellung 834 Stücke:
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500+0.4 EUR
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PDZVTR15B PDZVTR15B Rohm Semiconductor datasheet?p=PDZV15B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 15.6V 1W PMDTM
Tolerance: ±5.77%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
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PDZVTR15B PDZVTR15B Rohm Semiconductor datasheet?p=PDZV15B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 15.6V 1W PMDTM
Tolerance: ±5.77%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
auf Bestellung 2240 Stücke:
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25+0.7 EUR
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500+0.3 EUR
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PBZTBR115B Rohm Semiconductor datasheet?p=PBZ15B&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1000MW, 11V, DO-214AA(SMB), ZENE
Tolerance: ±5.77%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Supplier Device Package: SMBP
Power - Max: 1 W
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3000+0.3 EUR
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BM1R00148F-E2 datasheet?p=BM1R00148F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM1R00148F-E2
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY AND LOW STANDBY
Voltage - Start Up: 2.3 V
Fault Protection: Over Voltage
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 32V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 120V
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BM1R00148F-E2 datasheet?p=BM1R00148F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM1R00148F-E2
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY AND LOW STANDBY
Voltage - Start Up: 2.3 V
Fault Protection: Over Voltage
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 32V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 120V
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2400 Stücke:
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4+5.16 EUR
10+3.27 EUR
25+2.78 EUR
100+2.22 EUR
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500+1.78 EUR
1000+1.64 EUR
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BM1R00146F-E2 datasheet?p=BM1R00146F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM1R00146F-E2
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY AND LOW STANDBY
Voltage - Start Up: 2.3 V
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 32V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 120V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BM1R00146F-E2 datasheet?p=BM1R00146F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM1R00146F-E2
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY AND LOW STANDBY
Voltage - Start Up: 2.3 V
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: 8-SOP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 32V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 120V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2480 Stücke:
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Anzahl Preis
4+5.16 EUR
10+3.27 EUR
25+2.78 EUR
100+2.22 EUR
250+1.95 EUR
500+1.78 EUR
1000+1.64 EUR
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SDR03EZPF15R0 sdr-e.pdf
SDR03EZPF15R0
Hersteller: Rohm Semiconductor
Description: RES SMD 15 OHM 1% 0.3W 0603
Resistance: 15 Ohms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.4W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SDR03EZPF15R0 sdr-e.pdf
SDR03EZPF15R0
Hersteller: Rohm Semiconductor
Description: RES SMD 15 OHM 1% 0.3W 0603
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 Ohms
auf Bestellung 4544 Stücke:
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Anzahl Preis
72+0.25 EUR
148+0.12 EUR
188+0.094 EUR
223+0.079 EUR
264+0.067 EUR
316+0.056 EUR
500+0.049 EUR
1000+0.044 EUR
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SFR01MZPF1603 sfr-e.pdf
SFR01MZPF1603
Hersteller: Rohm Semiconductor
Description: RES 160K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 160 kOhms
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Anzahl Preis
10000+0.026 EUR
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SFR01MZPF1603 sfr-e.pdf
SFR01MZPF1603
Hersteller: Rohm Semiconductor
Description: RES 160K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 160 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
173+0.1 EUR
257+0.069 EUR
302+0.058 EUR
500+0.042 EUR
1000+0.037 EUR
5000+0.028 EUR
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SFR01MZPJ164 sfr-e.pdf
SFR01MZPJ164
Hersteller: Rohm Semiconductor
Description: RES 160K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 160 kOhms
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.021 EUR
Mindestbestellmenge: 10000
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SFR01MZPJ164 sfr-e.pdf
SFR01MZPJ164
Hersteller: Rohm Semiconductor
Description: RES 160K OHM 5% 1/16W 0402
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
189+0.093 EUR
354+0.05 EUR
1000+0.031 EUR
2500+0.027 EUR
5000+0.024 EUR
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ESR01MZPJ164 esr-e.pdf
ESR01MZPJ164
Hersteller: Rohm Semiconductor
Description: RES 160K OHM 5% 1/5W 0402
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
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Anzahl Preis
10000+0.025 EUR
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ESR01MZPJ164 esr-e.pdf
ESR01MZPJ164
Hersteller: Rohm Semiconductor
Description: RES 160K OHM 5% 1/5W 0402
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
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Anzahl Preis
46+0.39 EUR
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ESR01MZPF1603 esr-e.pdf
ESR01MZPF1603
Hersteller: Rohm Semiconductor
Description: RES 160K OHM 1% 1/5W 0402
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.033 EUR
Mindestbestellmenge: 10000
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ESR01MZPF1603 esr-e.pdf
ESR01MZPF1603
Hersteller: Rohm Semiconductor
Description: RES 160K OHM 1% 1/5W 0402
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±1%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
Resistance: 160 kOhms
Height - Seated (Max): 0.016" (0.40mm)
auf Bestellung 10000 Stücke:
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Anzahl Preis
38+0.48 EUR
Mindestbestellmenge: 38
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RB520ASA-30FHT2RB rb520asa-30fht2rb-e.pdf
RB520ASA-30FHT2RB
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 200MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB520ASA-30FHT2RB rb520asa-30fht2rb-e.pdf
RB520ASA-30FHT2RB
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 200MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Cut Tape (CT)
auf Bestellung 6917 Stücke:
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Anzahl Preis
30+0.6 EUR
41+0.43 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.18 EUR
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RB521ASA-30FHT2RB rb521asa-30fht2rb-e.pdf
RB521ASA-30FHT2RB
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 200MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 125°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB521ASA-30FHT2RB rb521asa-30fht2rb-e.pdf
RB521ASA-30FHT2RB
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 200MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 125°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Cut Tape (CT)
auf Bestellung 7875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.48 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.2 EUR
2000+0.19 EUR
Mindestbestellmenge: 26
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RB550ASA-30FHT2RB rb550asa-30fht2rb-e.pdf
RB550ASA-30FHT2RB
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 500MA DFN10062W
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2W
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RB550ASA-30FHT2RB rb550asa-30fht2rb-e.pdf
RB550ASA-30FHT2RB
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 500MA DFN10062W
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 7433 Stücke:
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Anzahl Preis
24+0.76 EUR
33+0.54 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.23 EUR
2000+0.21 EUR
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RB551ASA-30FHT2RB rb551asa-30fht2rb-e.pdf
RB551ASA-30FHT2RB
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 20V 500MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: 125°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB551ASA-30FHT2RB rb551asa-30fht2rb-e.pdf
RB551ASA-30FHT2RB
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 20V 500MA DFN10062W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: 125°C
Supplier Device Package: DFN1006-2W
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Packaging: Cut Tape (CT)
auf Bestellung 6909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.23 EUR
2000+0.21 EUR
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BD5320NVX-2CTL datasheet?p=BD5320NVX-2C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD5320NVX-2CTL
Hersteller: Rohm Semiconductor
Description: NANO ENERGY, 2.0V, ADJUSTABLE DE
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 2V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
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BD5320NVX-2CTL datasheet?p=BD5320NVX-2C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD5320NVX-2CTL
Hersteller: Rohm Semiconductor
Description: NANO ENERGY, 2.0V, ADJUSTABLE DE
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 2V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
31+0.58 EUR
34+0.52 EUR
100+0.45 EUR
250+0.42 EUR
500+0.4 EUR
1000+0.39 EUR
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HP8MC5TB1 datasheet?p=HP8MC5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8MC5TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 4.5A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 20W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+0.77 EUR
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HP8MC5TB1 datasheet?p=HP8MC5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8MC5TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
10+2.05 EUR
100+1.38 EUR
500+1.1 EUR
1000+1 EUR
Mindestbestellmenge: 6
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HP8KE7TB1 hp8ke7tb1-e.pdf
HP8KE7TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 10A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
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HP8KE7TB1 hp8ke7tb1-e.pdf
HP8KE7TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 10A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.79 EUR
10+3.79 EUR
100+2.65 EUR
500+2.16 EUR
1000+2 EUR
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HP8JE5TB1 datasheet?p=HP8JE5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8JE5TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 4.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Produkt ist nicht verfügbar
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HP8JE5TB1 datasheet?p=HP8JE5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8JE5TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 1104 Stücke:
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Anzahl Preis
5+4.28 EUR
10+2.9 EUR
100+2.03 EUR
500+1.64 EUR
1000+1.51 EUR
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RQ5P035BGTCL rq5p035bgtcl-e.pdf
RQ5P035BGTCL
Hersteller: Rohm Semiconductor
Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Produkt ist nicht verfügbar
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RQ5P035BGTCL rq5p035bgtcl-e.pdf
RQ5P035BGTCL
Hersteller: Rohm Semiconductor
Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
auf Bestellung 1139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
19+0.93 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.42 EUR
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LTR18EZPF20R0 ltr-e.pdf
LTR18EZPF20R0
Hersteller: Rohm Semiconductor
Description: RES SMD 20 OHM 1% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
Produkt ist nicht verfügbar
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LTR18EZPF20R0 ltr-e.pdf
LTR18EZPF20R0
Hersteller: Rohm Semiconductor
Description: RES SMD 20 OHM 1% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
115+0.15 EUR
148+0.12 EUR
172+0.1 EUR
200+0.088 EUR
250+0.074 EUR
500+0.066 EUR
1000+0.059 EUR
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KTR03EZPF6042 ktr-e.pdf
KTR03EZPF6042
Hersteller: Rohm Semiconductor
Description: RES SMD 60.4K OHM 1% 1/10W 0603
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200, High Voltage
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
Resistance: 60.4 kOhms
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KTR03EZPF6042 ktr-e.pdf
KTR03EZPF6042
Hersteller: Rohm Semiconductor
Description: RES SMD 60.4K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 60.4 kOhms
auf Bestellung 4919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
127+0.14 EUR
190+0.093 EUR
224+0.079 EUR
500+0.057 EUR
1000+0.05 EUR
Mindestbestellmenge: 63
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RB058L-30DDTE25
RB058L-30DDTE25
Hersteller: Rohm Semiconductor
Description: SUPER LOW IR, 30V 3A, SINGLE, DO
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.43 EUR
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RB058L-30DDTE25
RB058L-30DDTE25
Hersteller: Rohm Semiconductor
Description: SUPER LOW IR, 30V 3A, SINGLE, DO
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: PMDS
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
20+0.88 EUR
25+0.83 EUR
100+0.67 EUR
250+0.63 EUR
500+0.53 EUR
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SLA580BCT3F datasheet?p=SLA580BCT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SLA580BCT3F
Hersteller: Rohm Semiconductor
Description: LED BLUE CLEAR T-1 3/4 T/H
Lens Size: 5mm, T-1 3/4
Lens Style: Round with Domed Top
Lens Transparency: Clear
Supplier Device Package: T-1 3/4
Wavelength - Dominant: 470nm
Height (Max): 8.70mm
Viewing Angle: 10°
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 3.3V
Configuration: Standard
Millicandela Rating: 2500mcd
Mounting Type: Through Hole
Color: Blue
Package / Case: Radial
Packaging: Bulk
Produkt ist nicht verfügbar
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SFR01MZPF6040 sfr-e.pdf
SFR01MZPF6040
Hersteller: Rohm Semiconductor
Description: RES SMD 604 OHM 1% 1/10W 0402
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 604 Ohms
Produkt ist nicht verfügbar
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SDR10EZPJ152 sdr-e.pdf
SDR10EZPJ152
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.017 EUR
Mindestbestellmenge: 5000
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SDR10EZPJ152 sdr-e.pdf
SDR10EZPJ152
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 kOhms
auf Bestellung 8859 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
105+0.17 EUR
156+0.11 EUR
182+0.097 EUR
500+0.07 EUR
1000+0.062 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
KTR03EZPF6810 ktr-e.pdf
KTR03EZPF6810
Hersteller: Rohm Semiconductor
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.038 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
KTR03EZPF6810 ktr-e.pdf
KTR03EZPF6810
Hersteller: Rohm Semiconductor
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
130+0.14 EUR
193+0.092 EUR
226+0.078 EUR
500+0.056 EUR
1000+0.049 EUR
Mindestbestellmenge: 67
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SFR01MZPF6810 sfr-e.pdf
SFR01MZPF6810
Hersteller: Rohm Semiconductor
Description: RES SMD 681 OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 681 Ohms
Produkt ist nicht verfügbar
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SFR03EZPF6810 sfr-e.pdf
SFR03EZPF6810
Hersteller: Rohm Semiconductor
Description: RES SMD 681 OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
Produkt ist nicht verfügbar
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SFR18EZPF6810 sfr-e.pdf
SFR18EZPF6810
Hersteller: Rohm Semiconductor
Description: RES SMD 681 OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 681 Ohms
Produkt ist nicht verfügbar
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SDR03EZPF2R70 sdr-e.pdf
SDR03EZPF2R70
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.7 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.038 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SDR03EZPF2R70 sdr-e.pdf
SDR03EZPF2R70
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.7 Ohms
auf Bestellung 9548 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
130+0.14 EUR
193+0.092 EUR
226+0.078 EUR
500+0.056 EUR
1000+0.049 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPF2R70 sdr-e.pdf
SDR10EZPF2R70
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.021 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPF2R70 sdr-e.pdf
SDR10EZPF2R70
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
auf Bestellung 14775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
87+0.2 EUR
128+0.14 EUR
149+0.12 EUR
500+0.087 EUR
1000+0.077 EUR
Mindestbestellmenge: 46
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RX3L07BGNC16 datasheet?p=RX3L07BGN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RX3L07BGNC16
Hersteller: Rohm Semiconductor
Description: NCH 60V 70A, TO-220AB, POWER MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
auf Bestellung 1310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+3.77 EUR
100+2.94 EUR
500+2.4 EUR
Mindestbestellmenge: 4
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SLI-580UT3F datasheet?p=SLI-580UT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SLI-580UT3F
Hersteller: Rohm Semiconductor
Description: LED RED CLEAR T-1 3/4 T/H
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 5000mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 10°
Height (Max): 8.70mm
Wavelength - Dominant: 620nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
auf Bestellung 2555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
28+0.65 EUR
100+0.47 EUR
500+0.39 EUR
1000+0.36 EUR
2000+0.34 EUR
Mindestbestellmenge: 19
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PDZVTR9.1B datasheet?p=PDZV9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTR9.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.65V 1W PMDTM
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Power - Max: 1 W
Supplier Device Package: PMDTM
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.65 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±5.7%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PDZVTR9.1B datasheet?p=PDZV9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTR9.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.65V 1W PMDTM
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.65 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±5.7%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Power - Max: 1 W
Supplier Device Package: PMDTM
auf Bestellung 2168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
33+0.54 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
Mindestbestellmenge: 25
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PTZTFTE259.1B datasheet?p=PTZTF9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PTZTFTE259.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.65V 1W PMDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 9.65 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5.7%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTZTFTE259.1B datasheet?p=PTZTF9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PTZTFTE259.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.65V 1W PMDS
Tolerance: ±5.7%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Qualification: AEC-Q101
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
24+0.74 EUR
100+0.51 EUR
500+0.4 EUR
Mindestbestellmenge: 16
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PDZVTR15B datasheet?p=PDZV15B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTR15B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15.6V 1W PMDTM
Tolerance: ±5.77%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Produkt ist nicht verfügbar
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PDZVTR15B datasheet?p=PDZV15B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTR15B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15.6V 1W PMDTM
Tolerance: ±5.77%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
33+0.54 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
Mindestbestellmenge: 25
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PBZTBR115B datasheet?p=PBZ15B&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
Hersteller: Rohm Semiconductor
Description: 1000MW, 11V, DO-214AA(SMB), ZENE
Tolerance: ±5.77%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Supplier Device Package: SMBP
Power - Max: 1 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
Mindestbestellmenge: 3000
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