Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (101753) > Seite 1028 nach 1696
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RB521ASA-30FHT2RB | Rohm Semiconductor |
Description: DIODE SCHOTT 30V 200MA DFN10062WPackaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount, Wettable Flank Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: DFN1006-2W Operating Temperature - Junction: 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V Qualification: AEC-Q101 |
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RB521ASA-30FHT2RB | Rohm Semiconductor |
Description: DIODE SCHOTT 30V 200MA DFN10062WPackaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount, Wettable Flank Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: DFN1006-2W Operating Temperature - Junction: 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V Qualification: AEC-Q101 |
auf Bestellung 7875 Stücke: Lieferzeit 10-14 Tag (e) |
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RB550ASA-30FHT2RB | Rohm Semiconductor |
Description: DIODE SCHOTT 30V 500MA DFN10062WPackaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: DFN1006-2W Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA Current - Reverse Leakage @ Vr: 35 µA @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RB550ASA-30FHT2RB | Rohm Semiconductor |
Description: DIODE SCHOTT 30V 500MA DFN10062WPackaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: DFN1006-2W Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA Current - Reverse Leakage @ Vr: 35 µA @ 30 V Qualification: AEC-Q101 |
auf Bestellung 7433 Stücke: Lieferzeit 10-14 Tag (e) |
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RB551ASA-30FHT2RB | Rohm Semiconductor |
Description: DIODE SCHOTT 20V 500MA DFN10062WPackaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: DFN1006-2W Operating Temperature - Junction: 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RB551ASA-30FHT2RB | Rohm Semiconductor |
Description: DIODE SCHOTT 20V 500MA DFN10062WPackaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: DFN1006-2W Operating Temperature - Junction: 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 20 V Qualification: AEC-Q101 |
auf Bestellung 6909 Stücke: Lieferzeit 10-14 Tag (e) |
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BD5320NVX-2CTL | Rohm Semiconductor |
Description: NANO ENERGY, 2.0V, ADJUSTABLE DEPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Voltage Detector Operating Temperature: -40°C ~ 125°C Number of Voltages Monitored: 1 Reset Timeout: 27.7ms Minimum Voltage - Threshold: 2V Supplier Device Package: SSON004R1010 Grade: Automotive Qualification: AEC-Q100 |
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BD5320NVX-2CTL | Rohm Semiconductor |
Description: NANO ENERGY, 2.0V, ADJUSTABLE DEPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Voltage Detector Operating Temperature: -40°C ~ 125°C Number of Voltages Monitored: 1 Reset Timeout: 27.7ms Minimum Voltage - Threshold: 2V Supplier Device Package: SSON004R1010 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1528 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8MC5TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 60V 4.5A 8HSOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8MC5TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 60V 4.5A 8HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KE7TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 10A 8HSOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
Produkt ist nicht verfügbar |
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HP8KE7TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 10A 8HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 2465 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8JE5TB1 | Rohm Semiconductor |
Description: MOSFET 2P-CH 100V 4.5A 8HSOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
Produkt ist nicht verfügbar |
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HP8JE5TB1 | Rohm Semiconductor |
Description: MOSFET 2P-CH 100V 4.5A 8HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 1104 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5P035BGTCL | Rohm Semiconductor |
Description: 100V 3.5A TSMT3, POWER MOSFET :Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V |
Produkt ist nicht verfügbar |
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RQ5P035BGTCL | Rohm Semiconductor |
Description: 100V 3.5A TSMT3, POWER MOSFET :Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V |
auf Bestellung 1139 Stücke: Lieferzeit 10-14 Tag (e) |
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LTR18EZPF20R0 | Rohm Semiconductor |
Description: RES SMD 20 OHM 1% 1.5W 1206 WIDEPackaging: Tape & Reel (TR) Power (Watts): 1.5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.026" (0.65mm) Resistance: 20 Ohms |
Produkt ist nicht verfügbar |
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LTR18EZPF20R0 | Rohm Semiconductor |
Description: RES SMD 20 OHM 1% 1.5W 1206 WIDEPackaging: Cut Tape (CT) Power (Watts): 1.5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.026" (0.65mm) Resistance: 20 Ohms |
auf Bestellung 1429 Stücke: Lieferzeit 10-14 Tag (e) |
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KTR03EZPF6042 | Rohm Semiconductor |
Description: RES SMD 60.4K OHM 1% 1/10W 0603Packaging: Tape & Reel (TR) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 60.4 kOhms |
Produkt ist nicht verfügbar |
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KTR03EZPF6042 | Rohm Semiconductor |
Description: RES SMD 60.4K OHM 1% 1/10W 0603Packaging: Cut Tape (CT) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 60.4 kOhms |
auf Bestellung 4919 Stücke: Lieferzeit 10-14 Tag (e) |
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RB058L-30DDTE25 | Rohm Semiconductor |
Description: SUPER LOW IR, 30V 3A, SINGLE, DO Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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RB058L-30DDTE25 | Rohm Semiconductor |
Description: SUPER LOW IR, 30V 3A, SINGLE, DO Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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SLA580BCT3F | Rohm Semiconductor |
Description: LED BLUE CLEAR T-1 3/4 T/HPackaging: Bulk Package / Case: Radial Color: Blue Mounting Type: Through Hole Millicandela Rating: 2500mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 3.3V Lens Color: Colorless Current - Test: 20mA Viewing Angle: 10° Height (Max): 8.70mm Wavelength - Dominant: 470nm Supplier Device Package: T-1 3/4 Lens Transparency: Clear Lens Style: Round with Domed Top Lens Size: 5mm, T-1 3/4 |
Produkt ist nicht verfügbar |
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SFR01MZPF6040 | Rohm Semiconductor |
Description: RES SMD 604 OHM 1% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 604 Ohms |
Produkt ist nicht verfügbar |
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SDR10EZPJ152 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 1.5 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SDR10EZPJ152 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 1.5 kOhms |
auf Bestellung 8859 Stücke: Lieferzeit 10-14 Tag (e) |
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KTR03EZPF6810 | Rohm Semiconductor |
Description: HIGH VOLTAGE RESISTANCE CHIP RESPackaging: Tape & Reel (TR) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 681 Ohms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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KTR03EZPF6810 | Rohm Semiconductor |
Description: HIGH VOLTAGE RESISTANCE CHIP RESPackaging: Cut Tape (CT) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 681 Ohms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SFR01MZPF6810 | Rohm Semiconductor |
Description: RES SMD 681 OHM 1% 1/16W 0402Packaging: Tape & Reel (TR) Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 681 Ohms |
Produkt ist nicht verfügbar |
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SFR03EZPF6810 | Rohm Semiconductor |
Description: RES SMD 681 OHM 1% 1/10W 0603Packaging: Tape & Reel (TR) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 681 Ohms |
Produkt ist nicht verfügbar |
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SFR18EZPF6810 | Rohm Semiconductor |
Description: RES SMD 681 OHM 1% 1/4W 1206Packaging: Tape & Reel (TR) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 681 Ohms |
Produkt ist nicht verfügbar |
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SDR03EZPF2R70 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPackaging: Tape & Reel (TR) Power (Watts): 0.3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 2.7 Ohms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SDR03EZPF2R70 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPackaging: Cut Tape (CT) Power (Watts): 0.3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 2.7 Ohms |
auf Bestellung 9548 Stücke: Lieferzeit 10-14 Tag (e) |
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SDR10EZPF2R70 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPackaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 2.7 Ohms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SDR10EZPF2R70 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPackaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 2.7 Ohms |
auf Bestellung 14775 Stücke: Lieferzeit 10-14 Tag (e) |
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RX3L07BGNC16 | Rohm Semiconductor |
Description: NCH 60V 70A, TO-220AB, POWER MOSPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 50µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V |
auf Bestellung 1310 Stücke: Lieferzeit 10-14 Tag (e) |
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SLI-580UT3F | Rohm Semiconductor |
Description: LED RED CLEAR T-1 3/4 T/HPackaging: Bulk Package / Case: Radial Color: Red Mounting Type: Through Hole Millicandela Rating: 5000mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 1.9V Lens Color: Colorless Current - Test: 20mA Viewing Angle: 10° Height (Max): 8.70mm Wavelength - Dominant: 620nm Supplier Device Package: T-1 3/4 Lens Transparency: Clear Lens Style: Round with Domed Top Lens Size: 5mm, T-1 3/4 |
auf Bestellung 2555 Stücke: Lieferzeit 10-14 Tag (e) |
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PDZVTR9.1B | Rohm Semiconductor |
Description: DIODE ZENER 9.65V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±5.7% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.65 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 6 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PDZVTR9.1B | Rohm Semiconductor |
Description: DIODE ZENER 9.65V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±5.7% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.65 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 6 V |
auf Bestellung 2168 Stücke: Lieferzeit 10-14 Tag (e) |
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PTZTFTE259.1B | Rohm Semiconductor |
Description: DIODE ZENER 9.65V 1W PMDSTolerance: ±5.7% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.65 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDS Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 6 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PTZTFTE259.1B | Rohm Semiconductor |
Description: DIODE ZENER 9.65V 1W PMDSTolerance: ±5.7% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.65 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDS Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 6 V Qualification: AEC-Q101 |
auf Bestellung 834 Stücke: Lieferzeit 10-14 Tag (e) |
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PDZVTR15B | Rohm Semiconductor |
Description: DIODE ZENER 15.6V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±5.77% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 15.6 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 11 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PDZVTR15B | Rohm Semiconductor |
Description: DIODE ZENER 15.6V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±5.77% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 15.6 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 11 V |
auf Bestellung 2240 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBZTBR115B | Rohm Semiconductor |
Description: 1000MW, 11V, DO-214AA(SMB), ZENEPackaging: Tape & Reel (TR) Tolerance: ±5.77% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 15.6 V Supplier Device Package: SMBP Power - Max: 1 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBZTBR115B | Rohm Semiconductor |
Description: 1000MW, 11V, DO-214AA(SMB), ZENEPackaging: Cut Tape (CT) Tolerance: ±5.77% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 15.6 V Supplier Device Package: SMBP Power - Max: 1 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBZTBR133B | Rohm Semiconductor |
Description: 1000MW, 25V, DO-214AA(SMB), ZENEPackaging: Tape & Reel (TR) Tolerance: ±5.71% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 35 V Supplier Device Package: SMBP Power - Max: 1 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBZTBR133B | Rohm Semiconductor |
Description: 1000MW, 25V, DO-214AA(SMB), ZENEPackaging: Cut Tape (CT) Tolerance: ±5.71% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 35 V Supplier Device Package: SMBP Power - Max: 1 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PBZTBR19.1B | Rohm Semiconductor |
Description: 1000MW, 6V, DO-214AA(SMB), ZENERPackaging: Tape & Reel (TR) Tolerance: ±5.7% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.65 V Supplier Device Package: SMBP Power - Max: 1 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PBZTBR19.1B | Rohm Semiconductor |
Description: 1000MW, 6V, DO-214AA(SMB), ZENERPackaging: Cut Tape (CT) Tolerance: ±5.7% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.65 V Supplier Device Package: SMBP Power - Max: 1 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SML-P14R3WT86 | Rohm Semiconductor |
Description: ULTRA-SMALL AND ULTRA-THIN SURFAPackaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Wavelength: 940nm (920nm ~ 960nm) Mounting Type: Surface Mount Type: Infrared (IR) Orientation: Top View Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 50mA Radiant Intensity (Ie) Min @ If: 1.8mW/sr @ 50mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SML-P14R3WT86 | Rohm Semiconductor |
Description: ULTRA-SMALL AND ULTRA-THIN SURFAPackaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Wavelength: 940nm (920nm ~ 960nm) Mounting Type: Surface Mount Type: Infrared (IR) Orientation: Top View Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 50mA Radiant Intensity (Ie) Min @ If: 1.8mW/sr @ 50mA |
auf Bestellung 4925 Stücke: Lieferzeit 10-14 Tag (e) |
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SDR10EZPF1302 | Rohm Semiconductor |
Description: RES 13K OHM 1% 1/2W 0805Power (Watts): 0.667W, 2/3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 13 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SDR10EZPF1302 | Rohm Semiconductor |
Description: RES 13K OHM 1% 1/2W 0805Power (Watts): 0.667W, 2/3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 13 kOhms |
auf Bestellung 4892 Stücke: Lieferzeit 10-14 Tag (e) |
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LTR100JZPJ133 | Rohm Semiconductor |
Description: RES SMD 13K OHM 5% 3W 2512 WIDEPower (Watts): 3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 13 kOhms |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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LTR100JZPJ133 | Rohm Semiconductor |
Description: RES SMD 13K OHM 5% 3W 2512 WIDEPower (Watts): 3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 13 kOhms |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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LTR100JZPF1302 | Rohm Semiconductor |
Description: RES SMD 13K OHM 1% 3W 2512 WIDEPower (Watts): 3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 13 kOhms |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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LTR100JZPF1302 | Rohm Semiconductor |
Description: RES SMD 13K OHM 1% 3W 2512 WIDEPower (Watts): 3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 13 kOhms |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR15B | Rohm Semiconductor |
Description: DIODE ZENER 15.6V 1W PMDUPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 15.6 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 11 V |
auf Bestellung 7110 Stücke: Lieferzeit 10-14 Tag (e) |
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PDZVTR2.2B | Rohm Semiconductor |
Description: DIODE ZENER 2.2V 1W PMDTMPackaging: Tape & Reel (TR) Tolerance: ±5.68% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.2 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 200 µA @ 700 mV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PDZVTR2.2B | Rohm Semiconductor |
Description: DIODE ZENER 2.2V 1W PMDTMPackaging: Cut Tape (CT) Tolerance: ±5.68% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.2 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 200 µA @ 700 mV |
auf Bestellung 2359 Stücke: Lieferzeit 10-14 Tag (e) |
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| RB521ASA-30FHT2RB |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 200MA DFN10062W
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 30V 200MA DFN10062W
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB521ASA-30FHT2RB |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 200MA DFN10062W
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 30V 200MA DFN10062W
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
auf Bestellung 7875 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 37+ | 0.48 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.19 EUR |
| RB550ASA-30FHT2RB |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 500MA DFN10062W
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 30V 500MA DFN10062W
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB550ASA-30FHT2RB |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 30V 500MA DFN10062W
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 30V 500MA DFN10062W
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 7433 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.21 EUR |
| RB551ASA-30FHT2RB |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 20V 500MA DFN10062W
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 20V 500MA DFN10062W
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB551ASA-30FHT2RB |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTT 20V 500MA DFN10062W
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 20V 500MA DFN10062W
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 6909 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.21 EUR |
| BD5320NVX-2CTL |
![]() |
Hersteller: Rohm Semiconductor
Description: NANO ENERGY, 2.0V, ADJUSTABLE DE
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 2V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
Description: NANO ENERGY, 2.0V, ADJUSTABLE DE
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 2V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD5320NVX-2CTL |
![]() |
Hersteller: Rohm Semiconductor
Description: NANO ENERGY, 2.0V, ADJUSTABLE DE
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 2V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
Description: NANO ENERGY, 2.0V, ADJUSTABLE DE
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 2V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1528 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 31+ | 0.58 EUR |
| 34+ | 0.52 EUR |
| 100+ | 0.45 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.39 EUR |
| HP8MC5TB1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 4.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET N/P-CH 60V 4.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.77 EUR |
| HP8MC5TB1 |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET N/P-CH 60V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.22 EUR |
| 10+ | 2.05 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 1 EUR |
| HP8KE7TB1 |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 10A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET 2N-CH 100V 10A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HP8KE7TB1 |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 10A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET 2N-CH 100V 10A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2465 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.79 EUR |
| 10+ | 3.79 EUR |
| 100+ | 2.65 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 2 EUR |
| HP8JE5TB1 |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 4.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET 2P-CH 100V 4.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HP8JE5TB1 |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET 2P-CH 100V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 1104 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.28 EUR |
| 10+ | 2.9 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.51 EUR |
| RQ5P035BGTCL |
![]() |
Hersteller: Rohm Semiconductor
Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RQ5P035BGTCL |
![]() |
Hersteller: Rohm Semiconductor
Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Description: 100V 3.5A TSMT3, POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
auf Bestellung 1139 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.5 EUR |
| 19+ | 0.93 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.42 EUR |
| LTR18EZPF20R0 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 20 OHM 1% 1.5W 1206 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1.5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
Description: RES SMD 20 OHM 1% 1.5W 1206 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1.5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LTR18EZPF20R0 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 20 OHM 1% 1.5W 1206 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1.5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
Description: RES SMD 20 OHM 1% 1.5W 1206 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1.5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 20 Ohms
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 0.3 EUR |
| 115+ | 0.15 EUR |
| 148+ | 0.12 EUR |
| 172+ | 0.1 EUR |
| 200+ | 0.088 EUR |
| 250+ | 0.074 EUR |
| 500+ | 0.066 EUR |
| 1000+ | 0.059 EUR |
| KTR03EZPF6042 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 60.4K OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 60.4 kOhms
Description: RES SMD 60.4K OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 60.4 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KTR03EZPF6042 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 60.4K OHM 1% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 60.4 kOhms
Description: RES SMD 60.4K OHM 1% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 60.4 kOhms
auf Bestellung 4919 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 127+ | 0.14 EUR |
| 190+ | 0.093 EUR |
| 224+ | 0.079 EUR |
| 500+ | 0.057 EUR |
| 1000+ | 0.05 EUR |
| RB058L-30DDTE25 |
Hersteller: Rohm Semiconductor
Description: SUPER LOW IR, 30V 3A, SINGLE, DO
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
Qualification: AEC-Q101
Description: SUPER LOW IR, 30V 3A, SINGLE, DO
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.43 EUR |
| RB058L-30DDTE25 |
Hersteller: Rohm Semiconductor
Description: SUPER LOW IR, 30V 3A, SINGLE, DO
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
Qualification: AEC-Q101
Description: SUPER LOW IR, 30V 3A, SINGLE, DO
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 20+ | 0.88 EUR |
| 25+ | 0.83 EUR |
| 100+ | 0.67 EUR |
| 250+ | 0.63 EUR |
| 500+ | 0.53 EUR |
| SLA580BCT3F |
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Hersteller: Rohm Semiconductor
Description: LED BLUE CLEAR T-1 3/4 T/H
Packaging: Bulk
Package / Case: Radial
Color: Blue
Mounting Type: Through Hole
Millicandela Rating: 2500mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.3V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 10°
Height (Max): 8.70mm
Wavelength - Dominant: 470nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
Description: LED BLUE CLEAR T-1 3/4 T/H
Packaging: Bulk
Package / Case: Radial
Color: Blue
Mounting Type: Through Hole
Millicandela Rating: 2500mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.3V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 10°
Height (Max): 8.70mm
Wavelength - Dominant: 470nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFR01MZPF6040 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 604 OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 604 Ohms
Description: RES SMD 604 OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 604 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDR10EZPJ152 |
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Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.017 EUR |
| SDR10EZPJ152 |
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Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 kOhms
auf Bestellung 8859 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 0.33 EUR |
| 105+ | 0.17 EUR |
| 156+ | 0.11 EUR |
| 182+ | 0.097 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.062 EUR |
| KTR03EZPF6810 |
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Hersteller: Rohm Semiconductor
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.038 EUR |
| KTR03EZPF6810 |
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Hersteller: Rohm Semiconductor
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 130+ | 0.14 EUR |
| 193+ | 0.092 EUR |
| 226+ | 0.078 EUR |
| 500+ | 0.056 EUR |
| 1000+ | 0.049 EUR |
| SFR01MZPF6810 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 681 OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 681 Ohms
Description: RES SMD 681 OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 681 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFR03EZPF6810 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 681 OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
Description: RES SMD 681 OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 681 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFR18EZPF6810 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 681 OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 681 Ohms
Description: RES SMD 681 OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 681 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDR03EZPF2R70 |
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Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.7 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.7 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.038 EUR |
| SDR03EZPF2R70 |
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Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.7 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.7 Ohms
auf Bestellung 9548 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 130+ | 0.14 EUR |
| 193+ | 0.092 EUR |
| 226+ | 0.078 EUR |
| 500+ | 0.056 EUR |
| 1000+ | 0.049 EUR |
| SDR10EZPF2R70 |
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Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.021 EUR |
| SDR10EZPF2R70 |
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Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.7 Ohms
auf Bestellung 14775 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 87+ | 0.2 EUR |
| 128+ | 0.14 EUR |
| 149+ | 0.12 EUR |
| 500+ | 0.087 EUR |
| 1000+ | 0.077 EUR |
| RX3L07BGNC16 |
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Hersteller: Rohm Semiconductor
Description: NCH 60V 70A, TO-220AB, POWER MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
Description: NCH 60V 70A, TO-220AB, POWER MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
auf Bestellung 1310 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.89 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.4 EUR |
| SLI-580UT3F |
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Hersteller: Rohm Semiconductor
Description: LED RED CLEAR T-1 3/4 T/H
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 5000mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 10°
Height (Max): 8.70mm
Wavelength - Dominant: 620nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
Description: LED RED CLEAR T-1 3/4 T/H
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 5000mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Colorless
Current - Test: 20mA
Viewing Angle: 10°
Height (Max): 8.70mm
Wavelength - Dominant: 620nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
auf Bestellung 2555 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 28+ | 0.65 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.36 EUR |
| 2000+ | 0.34 EUR |
| PDZVTR9.1B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.65V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.7%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Description: DIODE ZENER 9.65V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.7%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZVTR9.1B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.65V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.7%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Description: DIODE ZENER 9.65V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.7%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
auf Bestellung 2168 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.2 EUR |
| PTZTFTE259.1B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.65V 1W PMDS
Tolerance: ±5.7%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.65V 1W PMDS
Tolerance: ±5.7%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PTZTFTE259.1B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.65V 1W PMDS
Tolerance: ±5.7%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.65V 1W PMDS
Tolerance: ±5.7%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Qualification: AEC-Q101
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.11 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| PDZVTR15B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15.6V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.77%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Description: DIODE ZENER 15.6V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.77%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZVTR15B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15.6V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.77%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Description: DIODE ZENER 15.6V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.77%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.2 EUR |
| PBZTBR115B |
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Hersteller: Rohm Semiconductor
Description: 1000MW, 11V, DO-214AA(SMB), ZENE
Packaging: Tape & Reel (TR)
Tolerance: ±5.77%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Supplier Device Package: SMBP
Power - Max: 1 W
Description: 1000MW, 11V, DO-214AA(SMB), ZENE
Packaging: Tape & Reel (TR)
Tolerance: ±5.77%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Supplier Device Package: SMBP
Power - Max: 1 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
| PBZTBR115B |
![]() |
Hersteller: Rohm Semiconductor
Description: 1000MW, 11V, DO-214AA(SMB), ZENE
Packaging: Cut Tape (CT)
Tolerance: ±5.77%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Supplier Device Package: SMBP
Power - Max: 1 W
Description: 1000MW, 11V, DO-214AA(SMB), ZENE
Packaging: Cut Tape (CT)
Tolerance: ±5.77%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15.6 V
Supplier Device Package: SMBP
Power - Max: 1 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 25+ | 0.72 EUR |
| 27+ | 0.68 EUR |
| 100+ | 0.54 EUR |
| 250+ | 0.5 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.33 EUR |
| PBZTBR133B |
![]() |
Hersteller: Rohm Semiconductor
Description: 1000MW, 25V, DO-214AA(SMB), ZENE
Packaging: Tape & Reel (TR)
Tolerance: ±5.71%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 35 V
Supplier Device Package: SMBP
Power - Max: 1 W
Description: 1000MW, 25V, DO-214AA(SMB), ZENE
Packaging: Tape & Reel (TR)
Tolerance: ±5.71%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 35 V
Supplier Device Package: SMBP
Power - Max: 1 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
| PBZTBR133B |
![]() |
Hersteller: Rohm Semiconductor
Description: 1000MW, 25V, DO-214AA(SMB), ZENE
Packaging: Cut Tape (CT)
Tolerance: ±5.71%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 35 V
Supplier Device Package: SMBP
Power - Max: 1 W
Description: 1000MW, 25V, DO-214AA(SMB), ZENE
Packaging: Cut Tape (CT)
Tolerance: ±5.71%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 35 V
Supplier Device Package: SMBP
Power - Max: 1 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 22+ | 0.83 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.54 EUR |
| 250+ | 0.47 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |
| PBZTBR19.1B |
![]() |
Hersteller: Rohm Semiconductor
Description: 1000MW, 6V, DO-214AA(SMB), ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±5.7%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Supplier Device Package: SMBP
Power - Max: 1 W
Description: 1000MW, 6V, DO-214AA(SMB), ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±5.7%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Supplier Device Package: SMBP
Power - Max: 1 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.33 EUR |
| PBZTBR19.1B |
![]() |
Hersteller: Rohm Semiconductor
Description: 1000MW, 6V, DO-214AA(SMB), ZENER
Packaging: Cut Tape (CT)
Tolerance: ±5.7%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Supplier Device Package: SMBP
Power - Max: 1 W
Description: 1000MW, 6V, DO-214AA(SMB), ZENER
Packaging: Cut Tape (CT)
Tolerance: ±5.7%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.65 V
Supplier Device Package: SMBP
Power - Max: 1 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.32 EUR |
| 22+ | 0.83 EUR |
| 26+ | 0.69 EUR |
| 100+ | 0.54 EUR |
| 250+ | 0.46 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |
| SML-P14R3WT86 |
![]() |
Hersteller: Rohm Semiconductor
Description: ULTRA-SMALL AND ULTRA-THIN SURFA
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Wavelength: 940nm (920nm ~ 960nm)
Mounting Type: Surface Mount
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - DC Forward (If) (Max): 50mA
Radiant Intensity (Ie) Min @ If: 1.8mW/sr @ 50mA
Description: ULTRA-SMALL AND ULTRA-THIN SURFA
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Wavelength: 940nm (920nm ~ 960nm)
Mounting Type: Surface Mount
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - DC Forward (If) (Max): 50mA
Radiant Intensity (Ie) Min @ If: 1.8mW/sr @ 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SML-P14R3WT86 |
![]() |
Hersteller: Rohm Semiconductor
Description: ULTRA-SMALL AND ULTRA-THIN SURFA
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Wavelength: 940nm (920nm ~ 960nm)
Mounting Type: Surface Mount
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - DC Forward (If) (Max): 50mA
Radiant Intensity (Ie) Min @ If: 1.8mW/sr @ 50mA
Description: ULTRA-SMALL AND ULTRA-THIN SURFA
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Wavelength: 940nm (920nm ~ 960nm)
Mounting Type: Surface Mount
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - DC Forward (If) (Max): 50mA
Radiant Intensity (Ie) Min @ If: 1.8mW/sr @ 50mA
auf Bestellung 4925 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.4 EUR |
| 2000+ | 0.38 EUR |
| SDR10EZPF1302 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 13K OHM 1% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 13 kOhms
Description: RES 13K OHM 1% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 13 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SDR10EZPF1302 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES 13K OHM 1% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 13 kOhms
Description: RES 13K OHM 1% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 13 kOhms
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 0.33 EUR |
| 102+ | 0.17 EUR |
| 127+ | 0.14 EUR |
| 149+ | 0.12 EUR |
| 181+ | 0.098 EUR |
| 250+ | 0.085 EUR |
| 500+ | 0.078 EUR |
| 1000+ | 0.07 EUR |
| LTR100JZPJ133 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 13K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 13 kOhms
Description: RES SMD 13K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 13 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.24 EUR |
| LTR100JZPJ133 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 13K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 13 kOhms
Description: RES SMD 13K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 13 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 34+ | 0.52 EUR |
| 40+ | 0.44 EUR |
| 50+ | 0.4 EUR |
| 100+ | 0.36 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.28 EUR |
| LTR100JZPF1302 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 13K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 13 kOhms
Description: RES SMD 13K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 13 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.26 EUR |
| LTR100JZPF1302 |
![]() |
Hersteller: Rohm Semiconductor
Description: RES SMD 13K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 13 kOhms
Description: RES SMD 13K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 13 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 32+ | 0.56 EUR |
| 38+ | 0.47 EUR |
| 50+ | 0.42 EUR |
| 100+ | 0.38 EUR |
| 250+ | 0.35 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| KDZVTR15B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15.6V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15.6 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Description: DIODE ZENER 15.6V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15.6 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
auf Bestellung 7110 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |
| PDZVTR2.2B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2.2V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.68%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 200 µA @ 700 mV
Description: DIODE ZENER 2.2V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.68%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 200 µA @ 700 mV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDZVTR2.2B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2.2V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.68%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 200 µA @ 700 mV
Description: DIODE ZENER 2.2V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.68%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 200 µA @ 700 mV
auf Bestellung 2359 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.21 EUR |




















