Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97766) > Seite 1612 nach 1630
Foto | Bezeichnung | Hersteller | Beschreibung |
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RD3G03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -35A On-state resistance: 24mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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RD3G07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -70A On-state resistance: 8.7mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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RD3L01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W Power dissipation: 26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -10A On-state resistance: 93mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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RD3L03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -35A On-state resistance: 46mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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RD3L07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -70A On-state resistance: 14.1mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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RJ1G12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 165nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 40V Drain current: 120A On-state resistance: 2.08mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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RJ1L12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 192W Polarisation: unipolar Gate charge: 175nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 60V Drain current: 120A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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RJ1P12BBDTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 100V Drain current: 120A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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EM6J1T2R | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 0.2A Pulsed drain current: -0.8A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 9.6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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QS6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 400mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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QS6J1TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 430mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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UM6J1NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.2A Pulsed drain current: -400mA Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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US6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -1.3A Pulsed drain current: -5.2A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±10V On-state resistance: 1.06Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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RCJ120N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 200V Drain current: 12A On-state resistance: 0.79Ω Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A |
Produkt ist nicht verfügbar |
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RCJ160N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 85W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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RSJ151P10TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Pulsed drain current: -30A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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KDZVTR4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA Mounting: SMD Leakage current: 20µA Power dissipation: 1W Kind of package: reel; tape Type of diode: Zener Case: SOD123F Tolerance: ±2% Semiconductor structure: single diode Zener voltage: 4.7V |
auf Bestellung 4360 Stücke: Lieferzeit 14-21 Tag (e) |
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RF2001NS2DFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 20A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.93V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RF2001NS2DTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 20A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.93V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RF2001NS3DFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 20A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RF2001NS3DTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 20A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RCJ510N25TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Pulsed drain current: 160A Drain-source voltage: 250V Drain current: 51A On-state resistance: 155mΩ Type of transistor: N-MOSFET Power dissipation: 304W Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
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MMBZ16VALFHT116 | ROHM SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23 Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Leakage current: 50nA Peak pulse power dissipation: 40W Max. off-state voltage: 13V Max. forward impulse current: 1.7A Breakdown voltage: 16V |
Produkt ist nicht verfügbar |
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1SS356VMTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 35V Load current: 0.1A Semiconductor structure: single diode Case: SC90A; SOD323F Max. forward voltage: 1V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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1SS400CMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Max. load current: 225mA Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD923 Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Kind of package: reel; tape |
auf Bestellung 4360 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS400CSFHT2RA | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Max. load current: 225mA Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD923 Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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1SS400SMFHT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Max. load current: 225mA Reverse recovery time: 4ns Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Kind of package: reel; tape |
auf Bestellung 5120 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS400SMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 3pF Case: SC79; SOD523 Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Leakage current: 0.1µA Kind of package: reel; tape |
auf Bestellung 7760 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1037AKT146Q | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Polarisation: bipolar Mounting: SMD Frequency: 140MHz Power dissipation: 0.2W Collector current: 0.15A Kind of package: reel; tape Collector-emitter voltage: 50V Case: SC59; SOT346 Current gain: 120...270 Type of transistor: PNP |
auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1037AKT146R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Polarisation: bipolar Mounting: SMD Frequency: 140MHz Power dissipation: 0.2W Collector current: 0.15A Kind of package: reel; tape Collector-emitter voltage: 50V Case: SC59; SOT346 Current gain: 180...390 Type of transistor: PNP |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2412KT146Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
auf Bestellung 2360 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2412KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2412KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
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UMZ1NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 150mW Case: SC88; SOT363 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz; 180MHz |
Produkt ist nicht verfügbar |
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RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.2W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel; tape Case: UMT3 On-state resistance: 3.1Ω Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
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KDZLVTFTR100 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA Power dissipation: 1W Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 5µA Case: SOD123F Zener voltage: 100V Type of diode: Zener Mounting: SMD |
Produkt ist nicht verfügbar |
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RCX450N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 45A Pulsed drain current: 180A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SML-010MTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW Power: 70mW Case: 1208 Mounting: SMD LED colour: green Type of diode: LED Wavelength: 570nm LED lens: transparent Luminosity: 5.6...25mcd LED current: 20mA Dimensions: 3x2x1.3mm Front: flat Operating voltage: 2.2...2.8V |
auf Bestellung 3102 Stücke: Lieferzeit 14-21 Tag (e) |
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SML-010YTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW Power: 70mW Case: 1208 Mounting: SMD LED colour: yellow Type of diode: LED Wavelength: 585nm LED lens: transparent Luminosity: 2.2...6.3mcd LED current: 20mA Dimensions: 3x2x1.3mm Front: flat Operating voltage: 2.1...2.8V |
Produkt ist nicht verfügbar |
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RSM002N06T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 250mA Pulsed drain current: 1A Power dissipation: 150mW Case: VMT3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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RF05VAM1STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Mounting: SMD Max. forward impulse current: 6A Case: SOD323HE Kind of package: reel; tape Load current: 0.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 25ns Max. forward voltage: 0.98V Max. off-state voltage: 100V |
Produkt ist nicht verfügbar |
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RF05VAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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RF05VYM1SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
auf Bestellung 4340 Stücke: Lieferzeit 14-21 Tag (e) |
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RF05VYM2SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RSX205LAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.49V Case: SOD128 Kind of package: reel; tape Leakage current: 200µA Max. forward impulse current: 60A |
Produkt ist nicht verfügbar |
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RQ6E045BNTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6 Mounting: SMD Power dissipation: 1.25W Case: TSMT6 Kind of package: reel; tape Pulsed drain current: 18A Gate charge: 8.4nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 49mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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UMB10NTN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Mounting: SMD Case: SC88; SOT363 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 150mW Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Current gain: 80 Kind of package: reel; tape Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A |
Produkt ist nicht verfügbar |
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UMH10NTN | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Mounting: SMD Case: SC88; SOT363 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 150mW Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 80 Kind of package: reel; tape Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A |
Produkt ist nicht verfügbar |
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UMN10NTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT363; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: triple independent Max. off-state voltage: 80V Reverse recovery time: 4ns Load current: 0.1A Max. forward voltage: 1.2V Max. forward impulse current: 4A Max. load current: 0.3A Type of diode: switching |
Produkt ist nicht verfügbar |
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R6007END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 14A Power dissipation: 78W Gate charge: 20nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO252 On-state resistance: 1.2Ω |
Produkt ist nicht verfügbar |
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R6007ENJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 14A Power dissipation: 78W Gate charge: 20nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: D2PAK On-state resistance: 1.2Ω |
Produkt ist nicht verfügbar |
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R6007JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252 Type of transistor: N-MOSFET Mounting: SMD Case: TO252 On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A |
Produkt ist nicht verfügbar |
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R6007JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK Type of transistor: N-MOSFET Mounting: SMD Case: D2PAK On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A |
Produkt ist nicht verfügbar |
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RUR040N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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RUR040N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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RB531SM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.35V Case: SC79; SOD523 Kind of package: reel; tape Leakage current: 10µA Max. forward impulse current: 1A |
Produkt ist nicht verfügbar |
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2SAR340PT100P | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 400V; 0.1A; 500mW; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 82...180 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RD3L08BGNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W Mounting: SMD Polarisation: unipolar Drain current: 80A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 8.1mΩ Gate-source voltage: ±20V Pulsed drain current: 160A Power dissipation: 119W Gate charge: 71nC |
Produkt ist nicht verfügbar |
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2SCR572D3TL1 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 5A; 10W; DPAK,TO252 Mounting: SMD Power dissipation: 10W Polarisation: bipolar Kind of package: reel; tape Type of transistor: NPN Collector current: 5A Current gain: 200...500 Collector-emitter voltage: 30V Frequency: 300MHz Case: DPAK; TO252 |
Produkt ist nicht verfügbar |
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2SCR573D3TL1 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252 Mounting: SMD Power dissipation: 10W Polarisation: bipolar Kind of package: reel; tape Type of transistor: NPN Collector current: 3A Current gain: 180...450 Collector-emitter voltage: 50V Frequency: 320MHz Case: DPAK; TO252 |
Produkt ist nicht verfügbar |
RD3G03BATTL1 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
RD3G07BATTL1 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
RD3L01BATTL1 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
RD3L03BATTL1 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
RD3L07BATTL1 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
RJ1G12BGNTLL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
RJ1L12BGNTLL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
RJ1P12BBDTLL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
EM6J1T2R |
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
QS6J11TR |
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
QS6J1TR |
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
UM6J1NTN |
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
US6J11TR |
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
RCJ120N20TL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Produkt ist nicht verfügbar
RCJ160N20TL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RSJ151P10TL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
KDZVTR4.7B |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Mounting: SMD
Leakage current: 20µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123F
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 4.7V
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Mounting: SMD
Leakage current: 20µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123F
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 4.7V
auf Bestellung 4360 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
350+ | 0.21 EUR |
430+ | 0.17 EUR |
485+ | 0.15 EUR |
560+ | 0.13 EUR |
590+ | 0.12 EUR |
RF2001NS2DFHTL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
RF2001NS2DTL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
RF2001NS3DFHTL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
RF2001NS3DTL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
RCJ510N25TL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
MMBZ16VALFHT116 |
Hersteller: ROHM SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
Produkt ist nicht verfügbar
1SS356VMTE-17 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
1SS400CMT2R |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
auf Bestellung 4360 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1300+ | 0.056 EUR |
1380+ | 0.052 EUR |
1700+ | 0.042 EUR |
1780+ | 0.04 EUR |
1SS400CSFHT2RA |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
1SS400SMFHT2R |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Max. load current: 225mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
auf Bestellung 5120 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1260+ | 0.057 EUR |
1380+ | 0.052 EUR |
1640+ | 0.044 EUR |
1720+ | 0.042 EUR |
1SS400SMT2R |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SC79; SOD523
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Leakage current: 0.1µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 3pF
Case: SC79; SOD523
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Leakage current: 0.1µA
Kind of package: reel; tape
auf Bestellung 7760 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1200+ | 0.06 EUR |
1340+ | 0.054 EUR |
1760+ | 0.041 EUR |
1860+ | 0.039 EUR |
2SA1037AKT146Q |
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 120...270
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 120...270
Type of transistor: PNP
auf Bestellung 2860 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1160+ | 0.062 EUR |
1280+ | 0.056 EUR |
1660+ | 0.043 EUR |
1760+ | 0.041 EUR |
2SA1037AKT146R |
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 180...390
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 180...390
Type of transistor: PNP
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1160+ | 0.062 EUR |
1280+ | 0.056 EUR |
1660+ | 0.043 EUR |
1760+ | 0.041 EUR |
2SC2412KT146Q |
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 2360 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1160+ | 0.062 EUR |
1280+ | 0.056 EUR |
1580+ | 0.046 EUR |
1660+ | 0.043 EUR |
2SC2412KT146R |
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
880+ | 0.082 EUR |
2SC2412KT146S |
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
UMZ1NTR |
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 150mW
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 180MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 150mW
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 180MHz
Produkt ist nicht verfügbar
RJU002N06FRAT106 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
KDZLVTFTR100 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD123F
Zener voltage: 100V
Type of diode: Zener
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD123F
Zener voltage: 100V
Type of diode: Zener
Mounting: SMD
Produkt ist nicht verfügbar
RCX450N20 |
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SML-010MTT86 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: green
Type of diode: LED
Wavelength: 570nm
LED lens: transparent
Luminosity: 5.6...25mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.2...2.8V
Category: SMD colour LEDs
Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: green
Type of diode: LED
Wavelength: 570nm
LED lens: transparent
Luminosity: 5.6...25mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.2...2.8V
auf Bestellung 3102 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
132+ | 0.54 EUR |
200+ | 0.36 EUR |
256+ | 0.28 EUR |
472+ | 0.15 EUR |
500+ | 0.14 EUR |
SML-010YTT86 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: yellow
Type of diode: LED
Wavelength: 585nm
LED lens: transparent
Luminosity: 2.2...6.3mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.1...2.8V
Category: SMD colour LEDs
Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: yellow
Type of diode: LED
Wavelength: 585nm
LED lens: transparent
Luminosity: 2.2...6.3mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.1...2.8V
Produkt ist nicht verfügbar
RSM002N06T2L |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250mA
Pulsed drain current: 1A
Power dissipation: 150mW
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250mA
Pulsed drain current: 1A
Power dissipation: 150mW
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RF05VAM1STR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Mounting: SMD
Max. forward impulse current: 6A
Case: SOD323HE
Kind of package: reel; tape
Load current: 0.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Max. off-state voltage: 100V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Mounting: SMD
Max. forward impulse current: 6A
Case: SOD323HE
Kind of package: reel; tape
Load current: 0.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
RF05VAM2STR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
auf Bestellung 2860 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
570+ | 0.13 EUR |
600+ | 0.12 EUR |
800+ | 0.09 EUR |
850+ | 0.085 EUR |
RF05VYM1SFHTR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
auf Bestellung 4340 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
630+ | 0.11 EUR |
690+ | 0.1 EUR |
910+ | 0.079 EUR |
960+ | 0.075 EUR |
RF05VYM2SFHTR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
RSX205LAM30TR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SOD128
Kind of package: reel; tape
Leakage current: 200µA
Max. forward impulse current: 60A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SOD128
Kind of package: reel; tape
Leakage current: 200µA
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
RQ6E045BNTCR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Mounting: SMD
Power dissipation: 1.25W
Case: TSMT6
Kind of package: reel; tape
Pulsed drain current: 18A
Gate charge: 8.4nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Mounting: SMD
Power dissipation: 1.25W
Case: TSMT6
Kind of package: reel; tape
Pulsed drain current: 18A
Gate charge: 8.4nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
UMB10NTN |
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Produkt ist nicht verfügbar
UMH10NTN |
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Produkt ist nicht verfügbar
UMN10NTR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT363; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Load current: 0.1A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. load current: 0.3A
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT363; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Load current: 0.1A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. load current: 0.3A
Type of diode: switching
Produkt ist nicht verfügbar
R6007END3TL1 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO252
On-state resistance: 1.2Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO252
On-state resistance: 1.2Ω
Produkt ist nicht verfügbar
R6007ENJTL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK
On-state resistance: 1.2Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK
On-state resistance: 1.2Ω
Produkt ist nicht verfügbar
R6007JND3TL1 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
Produkt ist nicht verfügbar
R6007JNJGTL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D2PAK
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D2PAK
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
Produkt ist nicht verfügbar
RUR040N02FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RUR040N02TL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RB531SM-30T2R |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Case: SC79; SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Case: SC79; SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
2SAR340PT100P |
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.1A; 500mW; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 82...180
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.1A; 500mW; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 82...180
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
RD3L08BGNTL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W
Mounting: SMD
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 8.1mΩ
Gate-source voltage: ±20V
Pulsed drain current: 160A
Power dissipation: 119W
Gate charge: 71nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W
Mounting: SMD
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 8.1mΩ
Gate-source voltage: ±20V
Pulsed drain current: 160A
Power dissipation: 119W
Gate charge: 71nC
Produkt ist nicht verfügbar
2SCR572D3TL1 |
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 5A; 10W; DPAK,TO252
Mounting: SMD
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 5A
Current gain: 200...500
Collector-emitter voltage: 30V
Frequency: 300MHz
Case: DPAK; TO252
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 5A; 10W; DPAK,TO252
Mounting: SMD
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 5A
Current gain: 200...500
Collector-emitter voltage: 30V
Frequency: 300MHz
Case: DPAK; TO252
Produkt ist nicht verfügbar
2SCR573D3TL1 |
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252
Mounting: SMD
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 3A
Current gain: 180...450
Collector-emitter voltage: 50V
Frequency: 320MHz
Case: DPAK; TO252
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252
Mounting: SMD
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 3A
Current gain: 180...450
Collector-emitter voltage: 50V
Frequency: 320MHz
Case: DPAK; TO252
Produkt ist nicht verfügbar