Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (102857) > Seite 1715 nach 1715
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| RS1E280BNTB | ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 112A Power dissipation: 30W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| RQ3E120ATTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -39A Pulsed drain current: -48A Power dissipation: 20W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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RB050L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Mounting: SMD Case: DO214AC; SMA Max. off-state voltage: 40V Max. forward voltage: 0.55V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 1mA Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RB058L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Mounting: SMD Case: DO214AC; SMA Max. off-state voltage: 40V Max. forward voltage: 0.69V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Leakage current: 5µA Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| RS1G120MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 48A Drain-source voltage: 40V Drain current: 34A On-state resistance: 20.7mΩ Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Gate charge: 9.4nC Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| RS1G150MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 40V Drain current: 43A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| RS1G201ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -78A On-state resistance: 6.5mΩ Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Gate charge: 130nC Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| RS1G260MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 104A Drain-source voltage: 40V Drain current: 80A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| RS1G300GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 120A Drain-source voltage: 40V Drain current: 80A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 56.8nC Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RS1E280BNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RQ3E120ATTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39A
Pulsed drain current: -48A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39A
Pulsed drain current: -48A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 104+ | 0.69 EUR |
| 127+ | 0.56 EUR |
| 135+ | 0.53 EUR |
| 1000+ | 0.51 EUR |
| RB050L-40DDTE25 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB058L-40DDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.69V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 40V
Max. forward voltage: 0.69V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1G120MNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 48A
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 20.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 9.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 48A
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 20.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 9.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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| RS1G150MNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1G201ATTB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -78A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 130nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -78A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 130nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1G260MNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 104A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 104A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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| RS1G300GNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 56.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 56.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH