Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (102551) > Seite 1710 nach 1710
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| BD1HD500EFJ-CE2 | ROHM SEMICONDUCTOR |
 Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 800mA; Ch: 1; SMD; HTSOP-J8; -40÷150°C Type of integrated circuit: power switch Number of channels: 1 Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side Mounting: SMD Operating temperature: -40...150°C Case: HTSOP-J8 Supply voltage: 4...18V On-state resistance: 0.65Ω Output current: 0.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| BD1HD500FVM-CTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 800mA; Ch: 1; SMD; MSOP8; -40÷150°C Type of integrated circuit: power switch Number of channels: 1 Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side Mounting: SMD Operating temperature: -40...150°C Case: MSOP8 Supply voltage: 4...18V On-state resistance: 0.65Ω Output current: 0.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
RE1C002UNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 0.15W; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.2A Pulsed drain current: 0.4A Power dissipation: 0.15W Case: SC89 Gate-source voltage: ±8V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3349 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BD1HD500EFJ-CE2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; SMD; HTSOP-J8; -40÷150°C
Type of integrated circuit: power switch
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: HTSOP-J8
Supply voltage: 4...18V
On-state resistance: 0.65Ω
Output current: 0.8A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; SMD; HTSOP-J8; -40÷150°C
Type of integrated circuit: power switch
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: HTSOP-J8
Supply voltage: 4...18V
On-state resistance: 0.65Ω
Output current: 0.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD1HD500FVM-CTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; SMD; MSOP8; -40÷150°C
Type of integrated circuit: power switch
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: MSOP8
Supply voltage: 4...18V
On-state resistance: 0.65Ω
Output current: 0.8A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; SMD; MSOP8; -40÷150°C
Type of integrated circuit: power switch
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: MSOP8
Supply voltage: 4...18V
On-state resistance: 0.65Ω
Output current: 0.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RE1C002UNTCL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 0.15W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Pulsed drain current: 0.4A
Power dissipation: 0.15W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 0.15W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Pulsed drain current: 0.4A
Power dissipation: 0.15W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3349 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 397+ | 0.18 EUR |
| 481+ | 0.15 EUR |
| 787+ | 0.09 EUR |
| 975+ | 0.07 EUR |
| 1507+ | 0.05 EUR |
| 1558+ | 0.05 EUR |
| 1593+ | 0.05 EUR |
| 1651+ | 0.04 EUR |