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R6012FNX R6012FNX Rohm Semiconductor r6012fnx.pdf Description: MOSFET N-CH 600V 12A TO220FM
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R6015FNX R6015FNX Rohm Semiconductor datasheet?p=R6015FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
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R6020FNX R6020FNX Rohm Semiconductor datasheet?p=R6020FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
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R6004CNDTL R6004CNDTL Rohm Semiconductor r6004cndtl-e.pdf Description: MOSFET N-CH 600V 4A CPT
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R6008FNJTL R6008FNJTL Rohm Semiconductor r6008fnj-e.pdf Description: MOSFET N-CH 600V 8A LPTS
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RFN10B3STL RFN10B3STL Rohm Semiconductor RFN10B3S.pdf Description: DIODE STANDARD 350V 10A CPD
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CPD
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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MP6K11TCR MP6K11TCR Rohm Semiconductor mp6k11.pdf Description: MOSFET 2N-CH 30V 3.5A MPT6
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MP6K12TCR MP6K12TCR Rohm Semiconductor MP6K12.pdf Description: MOSFET 2N-CH 30V 5A MPT6
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MP6K14TCR MP6K14TCR Rohm Semiconductor MP6K14.pdf Description: MOSFET 2N-CH 30V 8A MPT6
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MP6K31TCR MP6K31TCR Rohm Semiconductor MP6K31.pdf Description: MOSFET 2N-CH 60V 2A MPT6
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MP6M11TCR MP6M11TCR Rohm Semiconductor MP6M11.pdf Description: MOSFET N/P-CH 30V 3.5A MPT6
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MP6M12TCR MP6M12TCR Rohm Semiconductor MP6M12.pdf Description: MOSFET N/P-CH 30V 5A MPT6
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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MP6M14TCR MP6M14TCR Rohm Semiconductor MP6M14.pdf Description: MOSFET N/P-CH 30V 8A/6A MPT6
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QS8K51TR QS8K51TR Rohm Semiconductor datasheet?p=QS8K51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 2A TSMT8
Part Status: Not For New Designs
Supplier Device Package: TSMT8
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 30V
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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QS8M11TCR Rohm Semiconductor Description: MOSFET N/P-CH 30V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
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QS8M12TCR QS8M12TCR Rohm Semiconductor QS8M12.pdf Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
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QS8M13TCR QS8M13TCR Rohm Semiconductor datasheet?p=QS8M13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 6A/5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
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QS8M51TR QS8M51TR Rohm Semiconductor datasheet?p=QS8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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RCJ300N20TL RCJ300N20TL Rohm Semiconductor datasheet?p=RCJ300N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 30A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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RCJ330N25TL RCJ330N25TL Rohm Semiconductor datasheet?p=RCJ330N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 33A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RCJ450N20TL RCJ450N20TL Rohm Semiconductor datasheet?p=RCJ450N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 45A LPTS
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
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RCJ510N25TL RCJ510N25TL Rohm Semiconductor datasheet?p=RCJ510N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 51A LPTS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
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RCJ700N20TL RCJ700N20TL Rohm Semiconductor datasheet?p=RCJ700N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 70A LPTS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
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RF201L4STE25 RF201L4STE25 Rohm Semiconductor rf201l4s.pdf Description: DIODE GEN PURP 400V 1.5A PMDS
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
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RFN1L6STE25 RFN1L6STE25 Rohm Semiconductor Description: DIODE GEN PURP 600V 800MA PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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RFN1L7STE25 RFN1L7STE25 Rohm Semiconductor Description: DIODE GEN PURP 700V 800MA PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 700 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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RFUH10NS6STL RFUH10NS6STL Rohm Semiconductor datasheet?p=RFUH10NS6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 600V 10A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RFUH20NS6STL RFUH20NS6STL Rohm Semiconductor datasheet?p=RFUH20NS6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 600V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RP1E070XNTCR RP1E070XNTCR Rohm Semiconductor RP1E070XN.pdf Description: MOSFET N-CH 30V 7A MPT6
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RP1E075RPTR RP1E075RPTR Rohm Semiconductor RP1E075RP.pdf Description: MOSFET P-CH 30V 7.5A MPT6
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RP1E090XNTCR RP1E090XNTCR Rohm Semiconductor RP1E090XN.pdf Description: MOSFET N-CH 30V 9A MPT6
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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RP1E100XNTR RP1E100XNTR Rohm Semiconductor RP1E100XN.pdf Description: MOSFET N-CH 30V 10A MPT6
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RP1E125XNTR RP1E125XNTR Rohm Semiconductor RP1E125XN.pdf Description: MOSFET N-CH 30V 12.5A MPT6
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RP1H065SPTR RP1H065SPTR Rohm Semiconductor RP1H065SP.pdf Description: MOSFET P-CH 45V 6.5A MPT6
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6.5A, 10V
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RP1L055SNTR RP1L055SNTR Rohm Semiconductor RP1L055SN.pdf Description: MOSFET N-CH 60V 5.5A MPT6
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RP1L080SNTR RP1L080SNTR Rohm Semiconductor RP1L080SN.pdf Description: MOSFET N-CH 60V 8A MPT6
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RQ3E100MNTB1 RQ3E100MNTB1 Rohm Semiconductor RQ3E100MN Description: MOSFET N-CH 30V 10A HSMT8
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RQ3E150MNTB1 RQ3E150MNTB1 Rohm Semiconductor RQ3E150MN Description: MOSFET N-CH 30V 15A 8HSMT
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RSB33VTE-17 RSB33VTE-17 Rohm Semiconductor datasheet?p=RSB33V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 25VWM UMD2
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 29.7V
Bidirectional Channels: 1
Supplier Device Package: UMD2
Voltage - Reverse Standoff (Typ): 25V
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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RSB36VTE-17 RSB36VTE-17 Rohm Semiconductor rsb36v.pdf Description: TVS DIODE 27VWM UMD2
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 32.4V
Bidirectional Channels: 1
Supplier Device Package: UMD2
Voltage - Reverse Standoff (Typ): 27V
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
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RSB39VTE-17 RSB39VTE-17 Rohm Semiconductor rsb39v.pdf Description: TVS DIODE 30VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
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RSB5.6SMT2N RSB5.6SMT2N Rohm Semiconductor datasheet?p=RSB5.6SM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 2.5VWM EMD2
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 10W
Voltage - Breakdown (Min): 4.76V
Bidirectional Channels: 1
Supplier Device Package: EMD2
Voltage - Reverse Standoff (Typ): 2.5V
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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RSB6.8CST2RA RSB6.8CST2RA Rohm Semiconductor RSB6.8CS_DS.pdf Description: TVS DIODE 3.5VWM VMN2
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RSB6.8ZST2N RSB6.8ZST2N Rohm Semiconductor rsb6.8zs.pdf Description: TVS DIODE 3.5VWM GMD2
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RSJ10HN06TL RSJ10HN06TL Rohm Semiconductor RSJ10HN06.pdf Description: MOSFET N-CH 60V 100A LPTS
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RSJ250P10TL RSJ250P10TL Rohm Semiconductor datasheet?p=RSJ250P10&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET P-CH 100V 25A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
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RSJ400N06TL RSJ400N06TL Rohm Semiconductor RSJ400N06.pdf Description: MOSFET N-CH 60V 40A LPTS
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RSJ400N10TL RSJ400N10TL Rohm Semiconductor rsj400n10tl-e.pdf Description: MOSFET N-CH 100V 40A LPTS
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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RSJ550N10TL RSJ550N10TL Rohm Semiconductor rsj550n10.pdf Description: MOSFET N-CH 100V 55A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RSJ650N10TL RSJ650N10TL Rohm Semiconductor rsj650n10-e.pdf Description: MOSFET N-CH 100V 65A LPTS
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RSJ800N06TL RSJ800N06TL Rohm Semiconductor Description: MOSFET N-CH 60V 80A LPTS
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: LPTS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RSR010N10TL RSR010N10TL Rohm Semiconductor rsr010n10tl-e.pdf Description: MOSFET N-CH 100V 1A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
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R6004CNDTL R6004CNDTL Rohm Semiconductor r6004cndtl-e.pdf Description: MOSFET N-CH 600V 4A CPT
auf Bestellung 4226 Stücke:
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R6006ANDTL R6006ANDTL Rohm Semiconductor datasheet?p=R6006AND&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 6A CPT
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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10+2.9 EUR
100+2.31 EUR
500+1.95 EUR
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R6008FNJTL R6008FNJTL Rohm Semiconductor r6008fnj-e.pdf Description: MOSFET N-CH 600V 8A LPTS
auf Bestellung 1751 Stücke:
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RFN10B3STL RFN10B3STL Rohm Semiconductor RFN10B3S.pdf Description: DIODE STANDARD 350V 10A CPD
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CPD
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 350 V
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MP6K11TCR MP6K11TCR Rohm Semiconductor mp6k11.pdf Description: MOSFET 2N-CH 30V 3.5A MPT6
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MP6K12TCR MP6K12TCR Rohm Semiconductor MP6K12.pdf Description: MOSFET 2N-CH 30V 5A MPT6
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MP6K13TCR MP6K13TCR Rohm Semiconductor MP6K13.pdf Description: MOSFET 2N-CH 30V 6A MPT6
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MP6K14TCR MP6K14TCR Rohm Semiconductor MP6K14.pdf Description: MOSFET 2N-CH 30V 8A MPT6
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R6012FNX r6012fnx.pdf
R6012FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A TO220FM
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R6015FNX datasheet?p=R6015FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
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2+9.36 EUR
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R6020FNX datasheet?p=R6020FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
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R6004CNDTL r6004cndtl-e.pdf
R6004CNDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT
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R6008FNJTL r6008fnj-e.pdf
R6008FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A LPTS
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RFN10B3STL RFN10B3S.pdf
RFN10B3STL
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 10A CPD
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CPD
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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MP6K11TCR mp6k11.pdf
MP6K11TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A MPT6
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MP6K12TCR MP6K12.pdf
MP6K12TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A MPT6
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MP6K14TCR MP6K14.pdf
MP6K14TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A MPT6
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MP6K31TCR MP6K31.pdf
MP6K31TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 2A MPT6
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MP6M11TCR MP6M11.pdf
MP6M11TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A MPT6
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MP6M12TCR MP6M12.pdf
MP6M12TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A MPT6
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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MP6M14TCR MP6M14.pdf
MP6M14TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 8A/6A MPT6
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QS8K51TR datasheet?p=QS8K51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8K51TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 2A TSMT8
Part Status: Not For New Designs
Supplier Device Package: TSMT8
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 30V
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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QS8M11TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
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QS8M12TCR QS8M12.pdf
QS8M12TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
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QS8M13TCR datasheet?p=QS8M13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8M13TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Produkt ist nicht verfügbar
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QS8M51TR datasheet?p=QS8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8M51TR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.88 EUR
6000+0.82 EUR
Mindestbestellmenge: 3000
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RCJ300N20TL datasheet?p=RCJ300N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ300N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 30A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
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RCJ330N25TL datasheet?p=RCJ330N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ330N25TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RCJ450N20TL datasheet?p=RCJ450N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ450N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 45A LPTS
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Produkt ist nicht verfügbar
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RCJ510N25TL datasheet?p=RCJ510N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ510N25TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 51A LPTS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.5 EUR
Mindestbestellmenge: 1000
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RCJ700N20TL datasheet?p=RCJ700N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ700N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 70A LPTS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Produkt ist nicht verfügbar
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RF201L4STE25 rf201l4s.pdf
RF201L4STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDS
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar
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RFN1L6STE25
RFN1L6STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 800MA PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RFN1L7STE25
RFN1L7STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 700 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RFUH10NS6STL datasheet?p=RFUH10NS6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFUH10NS6STL
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RFUH20NS6STL datasheet?p=RFUH20NS6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFUH20NS6STL
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 600V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RP1E070XNTCR RP1E070XN.pdf
RP1E070XNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A MPT6
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RP1E075RPTR RP1E075RP.pdf
RP1E075RPTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A MPT6
Produkt ist nicht verfügbar
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RP1E090XNTCR RP1E090XN.pdf
RP1E090XNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A MPT6
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RP1E100XNTR RP1E100XN.pdf
RP1E100XNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A MPT6
Produkt ist nicht verfügbar
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RP1E125XNTR RP1E125XN.pdf
RP1E125XNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A MPT6
Produkt ist nicht verfügbar
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RP1H065SPTR RP1H065SP.pdf
RP1H065SPTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 6.5A MPT6
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6.5A, 10V
Produkt ist nicht verfügbar
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RP1L055SNTR RP1L055SN.pdf
RP1L055SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A MPT6
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MPT6
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RP1L080SNTR RP1L080SN.pdf
RP1L080SNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A MPT6
Produkt ist nicht verfügbar
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RQ3E100MNTB1 RQ3E100MN
RQ3E100MNTB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HSMT8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.78 EUR
Mindestbestellmenge: 3000
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RQ3E150MNTB1 RQ3E150MN
RQ3E150MNTB1
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
Produkt ist nicht verfügbar
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RSB33VTE-17 datasheet?p=RSB33V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB33VTE-17
Hersteller: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD2
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 29.7V
Bidirectional Channels: 1
Supplier Device Package: UMD2
Voltage - Reverse Standoff (Typ): 25V
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
15000+0.15 EUR
Mindestbestellmenge: 3000
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RSB36VTE-17 rsb36v.pdf
RSB36VTE-17
Hersteller: Rohm Semiconductor
Description: TVS DIODE 27VWM UMD2
Part Status: Not For New Designs
Power Line Protection: No
Voltage - Breakdown (Min): 32.4V
Bidirectional Channels: 1
Supplier Device Package: UMD2
Voltage - Reverse Standoff (Typ): 27V
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000
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RSB39VTE-17 rsb39v.pdf
RSB39VTE-17
Hersteller: Rohm Semiconductor
Description: TVS DIODE 30VWM UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: UMD2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.095 EUR
21000+0.091 EUR
30000+0.088 EUR
75000+0.079 EUR
Mindestbestellmenge: 3000
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RSB5.6SMT2N datasheet?p=RSB5.6SM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB5.6SMT2N
Hersteller: Rohm Semiconductor
Description: TVS DIODE 2.5VWM EMD2
Part Status: Not For New Designs
Power Line Protection: No
Power - Peak Pulse: 10W
Voltage - Breakdown (Min): 4.76V
Bidirectional Channels: 1
Supplier Device Package: EMD2
Voltage - Reverse Standoff (Typ): 2.5V
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.1 EUR
16000+0.086 EUR
Mindestbestellmenge: 8000
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RSB6.8CST2RA RSB6.8CS_DS.pdf
RSB6.8CST2RA
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Produkt ist nicht verfügbar
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RSB6.8ZST2N rsb6.8zs.pdf
RSB6.8ZST2N
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar
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RSJ10HN06TL RSJ10HN06.pdf
RSJ10HN06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 100A LPTS
Produkt ist nicht verfügbar
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RSJ250P10TL datasheet?p=RSJ250P10&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RSJ250P10TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 25A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.01 EUR
Mindestbestellmenge: 1000
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RSJ400N06TL RSJ400N06.pdf
RSJ400N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 40A LPTS
Produkt ist nicht verfügbar
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RSJ400N10TL rsj400n10tl-e.pdf
RSJ400N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 40A LPTS
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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RSJ550N10TL rsj550n10.pdf
RSJ550N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 55A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RSJ650N10TL rsj650n10-e.pdf
RSJ650N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 65A LPTS
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RSJ800N06TL
RSJ800N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 80A LPTS
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: LPTS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.59 EUR
Mindestbestellmenge: 1000
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RSR010N10TL rsr010n10tl-e.pdf
RSR010N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.44 EUR
Mindestbestellmenge: 3000
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R6004CNDTL r6004cndtl-e.pdf
R6004CNDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT
auf Bestellung 4226 Stücke:
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R6006ANDTL datasheet?p=R6006AND&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6006ANDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A CPT
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.9 EUR
100+2.31 EUR
500+1.95 EUR
1000+1.66 EUR
Mindestbestellmenge: 6
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R6008FNJTL r6008fnj-e.pdf
R6008FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A LPTS
auf Bestellung 1751 Stücke:
Lieferzeit 10-14 Tag (e)
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RFN10B3STL RFN10B3S.pdf
RFN10B3STL
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 10A CPD
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: CPD
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 350 V
Produkt ist nicht verfügbar
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MP6K11TCR mp6k11.pdf
MP6K11TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
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MP6K12TCR MP6K12.pdf
MP6K12TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A MPT6
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MP6K13TCR MP6K13.pdf
MP6K13TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A MPT6
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MP6K14TCR MP6K14.pdf
MP6K14TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A MPT6
Produkt ist nicht verfügbar
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