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DTC643TKT146 DTC643TKT146 Rohm Semiconductor datasheet?p=DTC643TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
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EM6M2T2R EM6M2T2R Rohm Semiconductor datasheet?p=EM6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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EMB3T2R EMB3T2R Rohm Semiconductor emb3t2r-e.pdf Description: TRANS 2PNP PREBIAS 0.15W EMT6
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EMN11T2R EMN11T2R Rohm Semiconductor datasheet?p=EMN11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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FMA5AT148 FMA5AT148 Rohm Semiconductor datasheet?p=FMA5A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL PNP SMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
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FMA7AT148 FMA7AT148 Rohm Semiconductor EMA7, FMA7A, UMA7N.pdf Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Not For New Designs
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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FMP1T148 FMP1T148 Rohm Semiconductor Taping_SMD5_T148-e.pdf Description: BRIDGE RECT 1PHASE 80V 25MA SMD5
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Average Rectified (Io): 25 mA
Voltage - Peak Reverse (Max): 80 V
Supplier Device Package: SMD5
Technology: Standard
Operating Temperature: 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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FMY5T148 FMY5T148 Rohm Semiconductor FMY5.pdf Description: TRANS NPN/PNP 120V 50MA SMT5
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 50mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz
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IMH23T110 IMH23T110 Rohm Semiconductor datasheet?p=IMH23&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL NPN SMT6
Part Status: Active
Supplier Device Package: SMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 600mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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IMH8AT108 IMH8AT108 Rohm Semiconductor datasheet?p=IMH8A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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MMSTA28T146 MMSTA28T146 Rohm Semiconductor datasheet?p=MMSTA28&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN DARL 80V 0.3A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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PTZTE2510B PTZTE2510B Rohm Semiconductor ptz_series.pdf Description: DIODE ZENER 10.3V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Power - Max: 1 W
Part Status: Not For New Designs
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 10.3 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
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PTZTE2511B PTZTE2511B Rohm Semiconductor ptzte2511b-e Description: DIODE ZENER 11.5V 1W PMDS
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PTZTE2513B PTZTE2513B Rohm Semiconductor ptz13b.pdf Description: DIODE ZENER 13.8V 1W PMDS
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PTZTE2515B PTZTE2515B Rohm Semiconductor ptz_series.pdf Description: DIODE ZENER 15.4V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Power - Max: 1 W
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 15.4 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
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PTZTE2516B PTZTE2516B Rohm Semiconductor ptz_series.pdf Description: DIODE ZENER 16.9V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Power - Max: 1 W
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 16.9 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
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PTZTE2520B PTZTE2520B Rohm Semiconductor ptz20b.pdf Description: DIODE ZENER 20.8V 1W PMDS
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PTZTE2522B PTZTE2522B Rohm Semiconductor ptz22b.pdf Description: DIODE ZENER 23.9V 1W PMDS
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PTZTE2530B PTZTE2530B Rohm Semiconductor ptz30b.pdf Description: DIODE ZENER 31.6V 1W PMDS
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PTZTE2533B PTZTE2533B Rohm Semiconductor ptz33b.pdf Description: DIODE ZENER 35V 1W PMDS
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PTZTE256.2B PTZTE256.2B Rohm Semiconductor ptz6.2b.pdf Description: DIODE ZENER 6.5V 1W PMDS
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PTZTE258.2B PTZTE258.2B Rohm Semiconductor ptz8.2b.pdf Description: DIODE ZENER 8.7V 1W PMDS
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QS6J11TR QS6J11TR Rohm Semiconductor datasheet?p=QS6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 12V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
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QS8K2TR QS8K2TR Rohm Semiconductor qs8k2tr-e.pdf Description: MOSFET 2N-CH 30V 3.5A TSMT8
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QST8TR QST8TR Rohm Semiconductor datasheet?p=QST8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP 12V 1.5A TSMT6
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 1.5A
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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QSX8TR QSX8TR Rohm Semiconductor datasheet?p=QSX8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN 30V 1A 6TSMT
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 1A
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
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RB060L-40TE25 RB060L-40TE25 Rohm Semiconductor rb060l-40.pdf Description: DIODE SCHOTTKY 40V 2A PMDS
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RB160L-60TE25 RB160L-60TE25 Rohm Semiconductor Description: DIODE SCHOTTKY 60V 1A PMDS
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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RB421DT146 RB421DT146 Rohm Semiconductor datasheet?p=RB421D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MA SMD3
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
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RB461FT106 RB461FT106 Rohm Semiconductor datasheet?p=RB461F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 20V 700MA UMD3
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3
Current - Average Rectified (Io): 700mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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RB550EATR RB550EATR Rohm Semiconductor datasheet?p=RB550EA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 30V 700MA TSMD5
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TSMD5
Current - Average Rectified (Io) (per Diode): 700mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Cut Tape (CT)
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RB558WTL RB558WTL Rohm Semiconductor rb558wtl-e.pdf Description: DIODE ARRAY SCHOTTKY 30V EMD3
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RB731XNTR RB731XNTR Rohm Semiconductor datasheet?p=RB731XN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 30MA UMD6
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD6
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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RN142GT2R RN142GT2R Rohm Semiconductor datasheet?p=RN142G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RF DIODE PIN 60V VMD2
Current - Max: 100 mA
Part Status: Obsolete
Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-723
Packaging: Cut Tape (CT)
Supplier Device Package: VMD2
Voltage - Peak Reverse (Max): 60V
Resistance @ If, F: 2Ohm @ 10mA, 100MHz
Produkt ist nicht verfügbar
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RUM002N02T2L RUM002N02T2L Rohm Semiconductor datasheet?p=RUM002N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
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RUR020N02TL RUR020N02TL Rohm Semiconductor datasheet?p=RUR020N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
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RZM002P02T2L RZM002P02T2L Rohm Semiconductor datasheet?p=RZM002P02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
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STZ5.6NT146 STZ5.6NT146 Rohm Semiconductor datasheet?p=STZ5.6N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER ARRAY 5.6V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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STZ6.2NT146 STZ6.2NT146 Rohm Semiconductor datasheet?p=STZ6.2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER ARRAY 6.2V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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UDZSTE-1736B UDZSTE-1736B Rohm Semiconductor datasheet?p=UDZS36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 36V 200MW UMD2
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Produkt ist nicht verfügbar
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UMC2NTR UMC2NTR Rohm Semiconductor umc2n_fmc2a.pdf Description: TRANS NPN/PNP PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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UMC5NTR UMC5NTR Rohm Semiconductor umc5n_fmc5a.pdf Description: TRANS NPN/PNP PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Resistor - Base (R1): 47kOhms, 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA, 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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UMD22NTR UMD22NTR Rohm Semiconductor datasheet?p=UMD22N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
Supplier Device Package: UMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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UMG3NTR UMG3NTR Rohm Semiconductor datasheet?p=UMG3N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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UML6NTR UML6NTR Rohm Semiconductor datasheet?p=UML6N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 12V 0.5A UMT5
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: UMT5
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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UMZ12NT106 UMZ12NT106 Rohm Semiconductor datasheet?p=UMZ12N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER ARRAY 12V UMD3
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Power - Max: 200 mW
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±8%
Packaging: Cut Tape (CT)
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UMZ6.8NT106 UMZ6.8NT106 Rohm Semiconductor datasheet?p=UMZ6.8N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER ARRAY 6.8V UMD3
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Power - Max: 200 mW
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
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UMZ7NTR UMZ7NTR Rohm Semiconductor emz7.pdf Description: TRANS NPN/PNP 12V 0.5A 6UMT
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R6004CNDTL R6004CNDTL Rohm Semiconductor r6004cndtl-e.pdf Description: MOSFET N-CH 600V 4A CPT
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MP6K11TCR MP6K11TCR Rohm Semiconductor mp6k11.pdf Description: MOSFET 2N-CH 30V 3.5A MPT6
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MP6K12TCR MP6K12TCR Rohm Semiconductor MP6K12.pdf Description: MOSFET 2N-CH 30V 5A MPT6
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MP6K14TCR MP6K14TCR Rohm Semiconductor MP6K14.pdf Description: MOSFET 2N-CH 30V 8A MPT6
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MP6M11TCR MP6M11TCR Rohm Semiconductor MP6M11.pdf Description: MOSFET N/P-CH 30V 3.5A MPT6
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MP6M14TCR MP6M14TCR Rohm Semiconductor MP6M14.pdf Description: MOSFET N/P-CH 30V 8A/6A MPT6
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RP1E125XNTR RP1E125XNTR Rohm Semiconductor RP1E125XN.pdf Description: MOSFET N-CH 30V 12.5A MPT6
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RF301B2STL RF301B2STL Rohm Semiconductor RF301B2S.pdf Description: DIODE GEN PURP 200V 3A CPD
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RF501B2STL RF501B2STL Rohm Semiconductor RF501B2STL.pdf Description: DIODE GEN PURP 200V 5A CPD
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PTZTE2513B PTZTE2513B Rohm Semiconductor ptz13b.pdf Description: DIODE ZENER 13.8V 1W PMDS
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PTZTE2520B PTZTE2520B Rohm Semiconductor ptz20b.pdf Description: DIODE ZENER 20.8V 1W PMDS
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PTZTE2522B PTZTE2522B Rohm Semiconductor ptz22b.pdf Description: DIODE ZENER 23.9V 1W PMDS
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DTC643TKT146 datasheet?p=DTC643TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC643TKT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
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EM6M2T2R datasheet?p=EM6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EM6M2T2R
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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EMB3T2R emb3t2r-e.pdf
EMB3T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
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EMN11T2R datasheet?p=EMN11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMN11T2R
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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FMA5AT148 datasheet?p=FMA5A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
FMA5AT148
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
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FMA7AT148 EMA7, FMA7A, UMA7N.pdf
FMA7AT148
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Not For New Designs
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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FMP1T148 Taping_SMD5_T148-e.pdf
FMP1T148
Hersteller: Rohm Semiconductor
Description: BRIDGE RECT 1PHASE 80V 25MA SMD5
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Average Rectified (Io): 25 mA
Voltage - Peak Reverse (Max): 80 V
Supplier Device Package: SMD5
Technology: Standard
Operating Temperature: 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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FMY5T148 FMY5.pdf
FMY5T148
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 120V 50MA SMT5
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 50mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz
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15+1.23 EUR
23+0.77 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
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IMH23T110 datasheet?p=IMH23&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMH23T110
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Part Status: Active
Supplier Device Package: SMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 600mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IMH8AT108 datasheet?p=IMH8A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMH8AT108
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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23+0.77 EUR
30+0.6 EUR
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MMSTA28T146 datasheet?p=MMSTA28&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMSTA28T146
Hersteller: Rohm Semiconductor
Description: TRANS NPN DARL 80V 0.3A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PTZTE2510B ptz_series.pdf
PTZTE2510B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10.3V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Power - Max: 1 W
Part Status: Not For New Designs
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 10.3 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PTZTE2511B ptzte2511b-e
PTZTE2511B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11.5V 1W PMDS
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PTZTE2513B ptz13b.pdf
PTZTE2513B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13.8V 1W PMDS
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PTZTE2515B ptz_series.pdf
PTZTE2515B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15.4V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Power - Max: 1 W
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 15.4 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
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20+0.9 EUR
23+0.77 EUR
100+0.57 EUR
500+0.45 EUR
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PTZTE2516B ptz_series.pdf
PTZTE2516B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16.9V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Power - Max: 1 W
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 16.9 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PTZTE2520B ptz20b.pdf
PTZTE2520B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20.8V 1W PMDS
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PTZTE2522B ptz22b.pdf
PTZTE2522B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 23.9V 1W PMDS
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PTZTE2530B ptz30b.pdf
PTZTE2530B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 31.6V 1W PMDS
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PTZTE2533B ptz33b.pdf
PTZTE2533B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 35V 1W PMDS
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PTZTE256.2B ptz6.2b.pdf
PTZTE256.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.5V 1W PMDS
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PTZTE258.2B ptz8.2b.pdf
PTZTE258.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.7V 1W PMDS
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QS6J11TR datasheet?p=QS6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6J11TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
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12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
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QS8K2TR qs8k2tr-e.pdf
QS8K2TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A TSMT8
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QST8TR datasheet?p=QST8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QST8TR
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP 12V 1.5A TSMT6
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 1.5A
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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13+1.41 EUR
21+0.88 EUR
100+0.57 EUR
500+0.44 EUR
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QSX8TR datasheet?p=QSX8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QSX8TR
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 30V 1A 6TSMT
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 1A
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
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13+1.44 EUR
20+0.9 EUR
100+0.58 EUR
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RB060L-40TE25 rb060l-40.pdf
RB060L-40TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
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RB160L-60TE25
RB160L-60TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDS
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RB421DT146 datasheet?p=RB421D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB421DT146
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA SMD3
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
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RB461FT106 datasheet?p=RB461F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB461FT106
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 700MA UMD3
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3
Current - Average Rectified (Io): 700mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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22+0.81 EUR
26+0.7 EUR
100+0.52 EUR
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RB550EATR datasheet?p=RB550EA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB550EATR
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 700MA TSMD5
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TSMD5
Current - Average Rectified (Io) (per Diode): 700mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Cut Tape (CT)
auf Bestellung 984 Stücke:
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13+1.43 EUR
20+0.88 EUR
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RB558WTL rb558wtl-e.pdf
RB558WTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 30V EMD3
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RB731XNTR datasheet?p=RB731XN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB731XNTR
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30MA UMD6
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD6
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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14+1.3 EUR
23+0.8 EUR
100+0.59 EUR
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RN142GT2R datasheet?p=RN142G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RN142GT2R
Hersteller: Rohm Semiconductor
Description: RF DIODE PIN 60V VMD2
Current - Max: 100 mA
Part Status: Obsolete
Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-723
Packaging: Cut Tape (CT)
Supplier Device Package: VMD2
Voltage - Peak Reverse (Max): 60V
Resistance @ If, F: 2Ohm @ 10mA, 100MHz
Produkt ist nicht verfügbar
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RUM002N02T2L datasheet?p=RUM002N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUM002N02T2L
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
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34+0.53 EUR
56+0.32 EUR
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RUR020N02TL datasheet?p=RUR020N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUR020N02TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 9453 Stücke:
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19+0.97 EUR
28+0.64 EUR
100+0.44 EUR
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RZM002P02T2L datasheet?p=RZM002P02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RZM002P02T2L
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
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35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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STZ5.6NT146 datasheet?p=STZ5.6N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
STZ5.6NT146
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 5.6V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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20+0.88 EUR
24+0.75 EUR
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STZ6.2NT146 datasheet?p=STZ6.2N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
STZ6.2NT146
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.2V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 14065 Stücke:
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18+0.99 EUR
21+0.85 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.37 EUR
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UDZSTE-1736B datasheet?p=UDZS36B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZSTE-1736B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 200MW UMD2
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36 V
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UMC2NTR umc2n_fmc2a.pdf
UMC2NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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UMC5NTR umc5n_fmc5a.pdf
UMC5NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Resistor - Base (R1): 47kOhms, 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA, 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 4865 Stücke:
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AnzahlPreis
28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.2 EUR
1000+0.15 EUR
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UMD22NTR datasheet?p=UMD22N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMD22NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
Supplier Device Package: UMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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UMG3NTR datasheet?p=UMG3N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMG3NTR
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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24+0.74 EUR
34+0.53 EUR
100+0.27 EUR
500+0.24 EUR
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UML6NTR datasheet?p=UML6N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UML6NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 12V 0.5A UMT5
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: UMT5
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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31+0.58 EUR
39+0.45 EUR
100+0.27 EUR
500+0.25 EUR
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UMZ12NT106 datasheet?p=UMZ12N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMZ12NT106
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 12V UMD3
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Power - Max: 200 mW
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±8%
Packaging: Cut Tape (CT)
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UMZ6.8NT106 datasheet?p=UMZ6.8N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMZ6.8NT106
Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.8V UMD3
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Power - Max: 200 mW
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
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29+0.62 EUR
37+0.48 EUR
100+0.29 EUR
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UMZ7NTR emz7.pdf
UMZ7NTR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 12V 0.5A 6UMT
auf Bestellung 8703 Stücke:
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R6004CNDTL r6004cndtl-e.pdf
R6004CNDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT
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MP6K11TCR mp6k11.pdf
MP6K11TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A MPT6
Produkt ist nicht verfügbar
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MP6K12TCR MP6K12.pdf
MP6K12TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A MPT6
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MP6K14TCR MP6K14.pdf
MP6K14TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A MPT6
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MP6M11TCR MP6M11.pdf
MP6M11TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A MPT6
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MP6M14TCR MP6M14.pdf
MP6M14TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 8A/6A MPT6
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RP1E125XNTR RP1E125XN.pdf
RP1E125XNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A MPT6
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RF301B2STL RF301B2S.pdf
RF301B2STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A CPD
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RF501B2STL RF501B2STL.pdf
RF501B2STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A CPD
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PTZTE2513B ptz13b.pdf
PTZTE2513B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13.8V 1W PMDS
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PTZTE2520B ptz20b.pdf
PTZTE2520B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20.8V 1W PMDS
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PTZTE2522B ptz22b.pdf
PTZTE2522B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 23.9V 1W PMDS
auf Bestellung 2649 Stücke:
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