Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (101904) > Seite 432 nach 1699
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RRR015P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 1.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
auf Bestellung 4692 Stücke: Lieferzeit 10-14 Tag (e) |
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RRR040P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 4A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RSR020N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 2A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RW1A020ZPT2R | Rohm Semiconductor |
Description: MOSFET P-CH 12V 2A WEMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-WEMT Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V |
auf Bestellung 6720 Stücke: Lieferzeit 10-14 Tag (e) |
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RZF020P01TL | Rohm Semiconductor |
Description: MOSFET P-CH 12V 2A TUMT3Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V |
auf Bestellung 9540 Stücke: Lieferzeit 10-14 Tag (e) |
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RZR020P01TL | Rohm Semiconductor |
Description: MOSFET P-CH 12V 2A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V |
auf Bestellung 6603 Stücke: Lieferzeit 10-14 Tag (e) |
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SST3904T116 | Rohm Semiconductor |
Description: TRANS NPN 40V 0.2A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
auf Bestellung 12079 Stücke: Lieferzeit 10-14 Tag (e) |
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SST3906T116 | Rohm Semiconductor |
Description: TRANS PNP 40V 0.2A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
auf Bestellung 13546 Stücke: Lieferzeit 10-14 Tag (e) |
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STZ6.8TT146 | Rohm Semiconductor |
Description: DIODE ZENER ARRAY 6.8V SMD3 |
auf Bestellung 2678 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR10 | Rohm Semiconductor |
Description: DIODE ZENER 10V 500MW TUMD2 |
auf Bestellung 1413 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR11 | Rohm Semiconductor |
Description: DIODE ZENER 11V 500MW TUMD2 |
auf Bestellung 2377 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR12 | Rohm Semiconductor |
Description: DIODE ZENER 12V 500MW TUMD2 |
auf Bestellung 5981 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR13 | Rohm Semiconductor |
Description: DIODE ZENER 13V 500MW TUMD2 |
auf Bestellung 1649 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR15 | Rohm Semiconductor |
Description: DIODE ZENER 15V 500MW TUMD2 |
auf Bestellung 4584 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR16 | Rohm Semiconductor |
Description: DIODE ZENER 16V 500MW TUMD2 |
auf Bestellung 8541 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR18 | Rohm Semiconductor |
Description: DIODE ZENER 18V 500MW TUMD2 |
auf Bestellung 1922 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR20 | Rohm Semiconductor |
Description: DIODE ZENER 20V 500MW TUMD2 |
auf Bestellung 1916 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR22 | Rohm Semiconductor |
Description: DIODE ZENER 22V 500MW TUMD2 |
auf Bestellung 2558 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR24 | Rohm Semiconductor |
Description: DIODE ZENER 24V 500MW TUMD2 |
auf Bestellung 1767 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR27 | Rohm Semiconductor |
Description: DIODE ZENER 27V 500MW TUMD2 |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR30 | Rohm Semiconductor |
Description: DIODE ZENER 30V 500MW TUMD2 |
auf Bestellung 5175 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR5.1 | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 500MW TUMD2Packaging: Cut Tape (CT) Tolerance: ±10% Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Supplier Device Package: TUMD2 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 1.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR5.6 | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 500MW TUMD2Packaging: Cut Tape (CT) Tolerance: ±10% Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: TUMD2 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 µA @ 2.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR6.2 | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 500MW TUMD2 |
auf Bestellung 1070 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR6.8 | Rohm Semiconductor |
Description: DIODE ZENER 6.8V 500MW TUMD2 |
auf Bestellung 2167 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR7.5 | Rohm Semiconductor |
Description: DIODE ZENER 7.5V 500MW TUMD2 |
auf Bestellung 1374 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TDZTR8.2 | Rohm Semiconductor |
Description: DIODE ZENER 8.2V 500MW TUMD2 |
auf Bestellung 2395 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UDZSTE-172.0B | Rohm Semiconductor |
Description: DIODE ZENER 2V 200MW UMD2Packaging: Cut Tape (CT) Tolerance: ±4% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 2 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: UMD2 Part Status: Not For New Designs Power - Max: 200 mW Current - Reverse Leakage @ Vr: 120 µA @ 500 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UDZTE-175.6B | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 200MW UMD2 |
auf Bestellung 5995 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UDZTE-178.2B | Rohm Semiconductor |
Description: DIODE ZENER 8.2V 200MW UMD2Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V |
auf Bestellung 2312 Stücke: Lieferzeit 10-14 Tag (e) |
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UMA1NTR | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP UMT5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: UMT5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UMA3NTR | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP UMT5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: UMT5 Part Status: Active |
auf Bestellung 214 Stücke: Lieferzeit 10-14 Tag (e) |
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UMA4NTR | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP UMT5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT5 |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UMA5NTR | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP UMT5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT5 Part Status: Active |
auf Bestellung 2380 Stücke: Lieferzeit 10-14 Tag (e) |
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UMB3NTN | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP UMT6 |
auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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UMD4NTR | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS UMT6 |
auf Bestellung 1047 Stücke: Lieferzeit 10-14 Tag (e) |
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UMD5NTR | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW, 120mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms, 4.7kOhms Resistor - Emitter Base (R2): 47kOhms, 10kOhms Supplier Device Package: UMT6 |
auf Bestellung 1079 Stücke: Lieferzeit 10-14 Tag (e) |
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UMH5NTR | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: UMT6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UMH8NTR | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W UMT6 |
auf Bestellung 4480 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UML2NTR | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A UMT5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: NPN + Diode (Isolated) Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: UMT5 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 797 Stücke: Lieferzeit 10-14 Tag (e) |
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UMN10NTR | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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UMN11NTN | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
auf Bestellung 2444 Stücke: Lieferzeit 10-14 Tag (e) |
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UMP11NTN | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
auf Bestellung 7931 Stücke: Lieferzeit 10-14 Tag (e) |
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UMP1NTR | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 25MA UMD5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Anode Current - Average Rectified (Io) (per Diode): 25mA Supplier Device Package: UMD5 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
auf Bestellung 5860 Stücke: Lieferzeit 10-14 Tag (e) |
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UMR12NTN | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
auf Bestellung 1465 Stücke: Lieferzeit 10-14 Tag (e) |
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US6J11TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 1.3A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
auf Bestellung 5885 Stücke: Lieferzeit 10-14 Tag (e) |
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US6M11TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 20V/12V 1.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V, 12V Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
auf Bestellung 9635 Stücke: Lieferzeit 10-14 Tag (e) |
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VDZT2R11B | Rohm Semiconductor |
Description: DIODE ZENER 11V 100MW VMD2 |
auf Bestellung 12401 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R12B | Rohm Semiconductor |
Description: DIODE ZENER 12V 100MW VMD2 |
auf Bestellung 15141 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R16B | Rohm Semiconductor |
Description: DIODE ZENER 16V 100MW VMD2 |
auf Bestellung 3775 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R18B | Rohm Semiconductor |
Description: DIODE ZENER 18V 100MW VMD2 |
auf Bestellung 7046 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R20B | Rohm Semiconductor |
Description: DIODE ZENER 20V 100MW VMD2 |
auf Bestellung 7851 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R27B | Rohm Semiconductor |
Description: DIODE ZENER 27V 100MW VMD2 |
auf Bestellung 7440 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R30B | Rohm Semiconductor |
Description: DIODE ZENER 30V 100MW VMD2Packaging: Cut Tape (CT) Tolerance: ±3% Package / Case: SOD-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: VMD2 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R33B | Rohm Semiconductor |
Description: DIODE ZENER 33V 100MW VMD2 |
auf Bestellung 15769 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R36B | Rohm Semiconductor |
Description: DIODE ZENER 36V 100MW VMD2 |
auf Bestellung 6428 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R3.6B | Rohm Semiconductor |
Description: DIODE ZENER 3.6V 100MW VMD2 |
auf Bestellung 6385 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VDZT2R3.9B | Rohm Semiconductor |
Description: DIODE ZENER 3.9V 100MW VMD2 |
auf Bestellung 3664 Stücke: Lieferzeit 10-14 Tag (e) |
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VDZT2R8.2B | Rohm Semiconductor |
Description: DIODE ZENER 8.2V 100MW VMD2Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: VMD2 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 5 V |
auf Bestellung 225 Stücke: Lieferzeit 10-14 Tag (e) |
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BA03FP-E2 | Rohm Semiconductor |
Description: IC REG LDO 3V 1A TO252-3 |
auf Bestellung 1794 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RRR015P03TL |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
auf Bestellung 4692 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.3 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| RRR040P03TL |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSR020N06TL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RW1A020ZPT2R |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A WEMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
Description: MOSFET P-CH 12V 2A WEMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 6720 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| 2000+ | 0.32 EUR |
| RZF020P01TL |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
Description: MOSFET P-CH 12V 2A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 9540 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 21+ | 0.87 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| RZR020P01TL |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
Description: MOSFET P-CH 12V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V
auf Bestellung 6603 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 22+ | 0.83 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| SST3904T116 |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: TRANS NPN 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 12079 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 63+ | 0.28 EUR |
| 101+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| SST3906T116 |
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Hersteller: Rohm Semiconductor
Description: TRANS PNP 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: TRANS PNP 40V 0.2A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 13546 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 74+ | 0.24 EUR |
| 118+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.097 EUR |
| STZ6.8TT146 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.8V SMD3
Description: DIODE ZENER ARRAY 6.8V SMD3
auf Bestellung 2678 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR10 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10V 500MW TUMD2
Description: DIODE ZENER 10V 500MW TUMD2
auf Bestellung 1413 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR11 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 500MW TUMD2
Description: DIODE ZENER 11V 500MW TUMD2
auf Bestellung 2377 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR12 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 500MW TUMD2
Description: DIODE ZENER 12V 500MW TUMD2
auf Bestellung 5981 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR13 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 500MW TUMD2
Description: DIODE ZENER 13V 500MW TUMD2
auf Bestellung 1649 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR15 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 500MW TUMD2
Description: DIODE ZENER 15V 500MW TUMD2
auf Bestellung 4584 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR16 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW TUMD2
Description: DIODE ZENER 16V 500MW TUMD2
auf Bestellung 8541 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR18 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 500MW TUMD2
Description: DIODE ZENER 18V 500MW TUMD2
auf Bestellung 1922 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR20 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 500MW TUMD2
Description: DIODE ZENER 20V 500MW TUMD2
auf Bestellung 1916 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR22 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 22V 500MW TUMD2
Description: DIODE ZENER 22V 500MW TUMD2
auf Bestellung 2558 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR24 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 24V 500MW TUMD2
Description: DIODE ZENER 24V 500MW TUMD2
auf Bestellung 1767 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR27 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 500MW TUMD2
Description: DIODE ZENER 27V 500MW TUMD2
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR30 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 500MW TUMD2
Description: DIODE ZENER 30V 500MW TUMD2
auf Bestellung 5175 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR5.1 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.1V 500MW TUMD2
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: TUMD2
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1.5 V
Description: DIODE ZENER 5.1V 500MW TUMD2
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: TUMD2
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDZTR5.6 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 500MW TUMD2
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: TUMD2
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 2.5 V
Description: DIODE ZENER 5.6V 500MW TUMD2
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: TUMD2
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 2.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDZTR6.2 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW TUMD2
Description: DIODE ZENER 6.2V 500MW TUMD2
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR6.8 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 500MW TUMD2
Description: DIODE ZENER 6.8V 500MW TUMD2
auf Bestellung 2167 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR7.5 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 500MW TUMD2
Description: DIODE ZENER 7.5V 500MW TUMD2
auf Bestellung 1374 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| TDZTR8.2 |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 500MW TUMD2
Description: DIODE ZENER 8.2V 500MW TUMD2
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| UDZSTE-172.0B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±4%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: UMD2
Part Status: Not For New Designs
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 120 µA @ 500 V
Description: DIODE ZENER 2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±4%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: UMD2
Part Status: Not For New Designs
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 120 µA @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZTE-175.6B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 200MW UMD2
Description: DIODE ZENER 5.6V 200MW UMD2
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| UDZTE-178.2B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Description: DIODE ZENER 8.2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
auf Bestellung 2312 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 56+ | 0.32 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| UMA1NTR |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT5
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UMA3NTR |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT5
Part Status: Active
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: UMT5
Part Status: Active
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.25 EUR |
| UMA4NTR |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT5
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT5
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| UMA5NTR |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT5
Part Status: Active
Description: TRANS PREBIAS DUAL PNP UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT5
Part Status: Active
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 51+ | 0.35 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.12 EUR |
| UMB3NTN |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT6
Description: TRANS PREBIAS DUAL PNP UMT6
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 38+ | 0.47 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.17 EUR |
| UMD4NTR |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS UMT6
Description: TRANS NPN/PNP PREBIAS UMT6
auf Bestellung 1047 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 40+ | 0.44 EUR |
| 100+ | 0.25 EUR |
| UMD5NTR |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW, 120mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: UMT6
Description: TRANS NPN/PNP PREBIAS UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW, 120mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: UMT6
auf Bestellung 1079 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 47+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| UMH5NTR |
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Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT6
Description: TRANS 2NPN PREBIAS 0.15W UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: UMT6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UMH8NTR |
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Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT6
Description: TRANS 2NPN PREBIAS 0.15W UMT6
auf Bestellung 4480 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| UML2NTR |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: UMT5
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A UMT5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: UMT5
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.24 EUR |
| UMN10NTR |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |
| UMN11NTN |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 2444 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 28+ | 0.63 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| UMP11NTN |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 7931 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 30+ | 0.59 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| UMP1NTR |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 25MA UMD5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 25mA
Supplier Device Package: UMD5
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 25MA UMD5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 25mA
Supplier Device Package: UMD5
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 5860 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| UMR12NTN |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA UMD6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 29+ | 0.61 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| US6J11TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 5885 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 20+ | 0.88 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.39 EUR |
| US6M11TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V/12V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET N/P-CH 20V/12V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 9635 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 21+ | 0.84 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| VDZT2R11B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 100MW VMD2
Description: DIODE ZENER 11V 100MW VMD2
auf Bestellung 12401 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VDZT2R12B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 100MW VMD2
Description: DIODE ZENER 12V 100MW VMD2
auf Bestellung 15141 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VDZT2R16B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 100MW VMD2
Description: DIODE ZENER 16V 100MW VMD2
auf Bestellung 3775 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VDZT2R18B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 100MW VMD2
Description: DIODE ZENER 18V 100MW VMD2
auf Bestellung 7046 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VDZT2R20B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 20V 100MW VMD2
Description: DIODE ZENER 20V 100MW VMD2
auf Bestellung 7851 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VDZT2R27B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 100MW VMD2
Description: DIODE ZENER 27V 100MW VMD2
auf Bestellung 7440 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VDZT2R30B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 100MW VMD2
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: VMD2
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Description: DIODE ZENER 30V 100MW VMD2
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: VMD2
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VDZT2R33B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 100MW VMD2
Description: DIODE ZENER 33V 100MW VMD2
auf Bestellung 15769 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VDZT2R36B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 100MW VMD2
Description: DIODE ZENER 36V 100MW VMD2
auf Bestellung 6428 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VDZT2R3.6B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.6V 100MW VMD2
Description: DIODE ZENER 3.6V 100MW VMD2
auf Bestellung 6385 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VDZT2R3.9B |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 100MW VMD2
Description: DIODE ZENER 3.9V 100MW VMD2
auf Bestellung 3664 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.16 EUR |
| VDZT2R8.2B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 100MW VMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: VMD2
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Description: DIODE ZENER 8.2V 100MW VMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: VMD2
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 39+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| BA03FP-E2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LDO 3V 1A TO252-3
Description: IC REG LDO 3V 1A TO252-3
auf Bestellung 1794 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH























