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BU97950FUV-BZE2 BU97950FUV-BZE2 Rohm Semiconductor bu97950fuv-e.pdf Description: IC LCD DVR 35X8COM IND 48TSSOP
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BU9795AKS2-E2 BU9795AKS2-E2 Rohm Semiconductor bu9795afv-e.pdf Description: IC LCD DVR 35X4COM 3WIRE 52SQFP
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BU9799KV-BZE2 BU9799KV-BZE2 Rohm Semiconductor bu9799kv-e.pdf Description: IC LCD DVR 50X4COM IND 64VQFP
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BD9G341EFJ-E2 BD9G341EFJ-E2 Rohm Semiconductor BD9G341EFJ.pdf Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz ~ 750kHz
Voltage - Input (Max): 76V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 76V
Voltage - Input (Min): 12V
Voltage - Output (Min/Fixed): 1V
Part Status: Obsolete
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BD9G341EFJ-E2 BD9G341EFJ-E2 Rohm Semiconductor BD9G341EFJ.pdf Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz ~ 750kHz
Voltage - Input (Max): 76V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 76V
Voltage - Input (Min): 12V
Voltage - Output (Min/Fixed): 1V
Part Status: Obsolete
Produkt ist nicht verfügbar
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RGT40TS65DGC11 RGT40TS65DGC11 Rohm Semiconductor rgt40ts65d-e.pdf Description: IGBT TRENCH FS 650V 40A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
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RGT50TS65DGC11 RGT50TS65DGC11 Rohm Semiconductor rgt50ts65d-e.pdf Description: IGBT TRENCH FS 650V 48A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
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RGT60TS65DGC11 RGT60TS65DGC11 Rohm Semiconductor rgt60ts65d-e.pdf Description: IGBT TRNCH FIELD 650V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/100ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 194 W
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RGT80TS65DGC11 RGT80TS65DGC11 Rohm Semiconductor rgt80ts65d-e.pdf Description: IGBT TRENCH FS 650V 70A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/119ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 234 W
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RGTH00TS65DGC11 RGTH00TS65DGC11 Rohm Semiconductor rgth00ts65d-e Description: IGBT TRNCH FIELD 650V 85A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
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RGTH00TS65GC11 RGTH00TS65GC11 Rohm Semiconductor rgth00ts65-e Description: IGBT TRNCH FIELD 650V 85A TO247N
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RGTH40TS65DGC11 RGTH40TS65DGC11 Rohm Semiconductor rgth40ts65d-e Description: IGBT TRNCH FIELD 650V 40A TO247N
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RGTH40TS65GC11 RGTH40TS65GC11 Rohm Semiconductor rgth40ts65-e Description: IGBT TRENCH FS 650V 40A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
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RGTH50TS65DGC11 RGTH50TS65DGC11 Rohm Semiconductor rgth50ts65d-e Description: IGBT TRNCH FIELD 650V 50A TO247N
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RGTH50TS65GC11 RGTH50TS65GC11 Rohm Semiconductor rgth50ts65-e Description: IGBT TRNCH FIELD 650V 50A TO247N
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RGTH60TS65DGC11 RGTH60TS65DGC11 Rohm Semiconductor rgth60ts65d-e Description: IGBT TRENCH FS 650V 58A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
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RGTH80TS65DGC11 RGTH80TS65DGC11 Rohm Semiconductor rgth80ts65d-e Description: IGBT TRNCH FIELD 650V 70A TO247N
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RGT40NS65DGTL RGT40NS65DGTL Rohm Semiconductor datasheet?p=RGT40NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
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RGT8BM65DTL RGT8BM65DTL Rohm Semiconductor rgt8bm65d-e.pdf Description: IGBT TRENCH FIELD 650V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
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RGT8NS65DGTL RGT8NS65DGTL Rohm Semiconductor rgt8ns65d-e.pdf Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Produkt ist nicht verfügbar
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RGT16NS65DGTL RGT16NS65DGTL Rohm Semiconductor datasheet?p=RGT16NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
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RGT30NS65DGTL RGT30NS65DGTL Rohm Semiconductor datasheet?p=RGT30NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 133 W
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RGT40NS65DGTL RGT40NS65DGTL Rohm Semiconductor datasheet?p=RGT40NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
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RGT8BM65DTL RGT8BM65DTL Rohm Semiconductor rgt8bm65d-e.pdf Description: IGBT TRENCH FIELD 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
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BD9B300MUV-EVK-101 BD9B300MUV-EVK-101 Rohm Semiconductor BD9B300MUV-EVK-101%20User%20Guide.pdf Description: EVAL BOARD FOR BD9B300
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 2.7V ~ 5.5V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD9B300
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
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BD9B300MUV-E2 BD9B300MUV-E2 Rohm Semiconductor datasheet?p=BD9B300MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 3A 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz, 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN016V3030
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.4V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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KDZTFTR5.6B KDZTFTR5.6B Rohm Semiconductor datasheet?p=KDZTF5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 1W PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: PMDU
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BD9B300MUV-E2 BD9B300MUV-E2 Rohm Semiconductor datasheet?p=BD9B300MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 3A 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz, 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN016V3030
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.4V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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25+1.82 EUR
100+1.5 EUR
250+1.4 EUR
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KDZTFTR5.6B KDZTFTR5.6B Rohm Semiconductor datasheet?p=KDZTF5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: PMDU
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BM60014FV-CE2 BM60014FV-CE2 Rohm Semiconductor Jisso_SSOP-B20W-3-2_Rev004s_E2_Drypack_Multichip(MSL1).pdf Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 10V ~ 24V
Qualification: AEC-Q100
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BM6102FV-CE2 BM6102FV-CE2 Rohm Semiconductor datasheet?p=BM6102FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A, 1A
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 14V ~ 20V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BM6104FV-CE2 BM6104FV-CE2 Rohm Semiconductor datasheet?p=BM6104FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A, 1A
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 10V ~ 24V
Qualification: AEC-Q100
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BD14000EFV-EVK-001 BD14000EFV-EVK-001 Rohm Semiconductor BD14000EFV-EVK_UsersGuide-E.pdf Description: EVAL BOARD FOR BD14000
Packaging: Box
Function: Battery Monitor
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD14000
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Secondary Attributes: 8V ~ 24V Supply
Embedded: No
Part Status: Active
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BD14000EFV-CE2 BD14000EFV-CE2 Rohm Semiconductor datasheet?p=BD14000EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LSI CELL BALANCE 30HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 30-VSSOP (0.220", 5.60mm Width) Exposed Pad
Number of Cells: 4 ~ 6
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: Series
Operating Temperature: -40°C ~ 105°C
Battery Chemistry: Supercapacitor
Supplier Device Package: 30-HTSSOP-B
Fault Protection: Over Current
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD14000EFV-CE2 BD14000EFV-CE2 Rohm Semiconductor datasheet?p=BD14000EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LSI CELL BALANCE 30HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-VSSOP (0.220", 5.60mm Width) Exposed Pad
Number of Cells: 4 ~ 6
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: Series
Operating Temperature: -40°C ~ 105°C
Battery Chemistry: Supercapacitor
Supplier Device Package: 30-HTSSOP-B
Fault Protection: Over Current
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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100+19.1 EUR
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R5005CNX R5005CNX Rohm Semiconductor R5005CNX Description: MOSFET N-CH 500V 5A TO220
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R5007ANX R5007ANX Rohm Semiconductor R5007ANX Description: MOSFET N-CH 500V 7A TO220
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R5007FNX R5007FNX Rohm Semiconductor r5007fnx-e.pdf Description: MOSFET N-CH 500V 7A TO220
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R5011ANX R5011ANX Rohm Semiconductor 2SK2095N-v1.jpg Description: MOSFET N-CH 500V 11A TO220FM
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
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R5021ANX R5021ANX Rohm Semiconductor datasheet?p=R5021ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 21A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
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R6004ENX R6004ENX Rohm Semiconductor r6004enx-e.pdf Description: MOSFET N-CH 600V 4A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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100+2.07 EUR
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R6007ENX R6007ENX Rohm Semiconductor r6007enx-e.pdf Description: MOSFET N-CH 600V 7A TO220FM
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R6009ENX R6009ENX Rohm Semiconductor r6009enx-e.pdf Description: MOSFET N-CH 600V 9A TO220FM
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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3+7.16 EUR
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R6011ENX R6011ENX Rohm Semiconductor r6011enx-e.pdf Description: MOSFET N-CH 600V 11A TO220FM
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R6015ENX R6015ENX Rohm Semiconductor r6015enx-e.pdf Description: MOSFET N-CH 600V 15A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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R6020ENX R6020ENX Rohm Semiconductor r6020enx-e.pdf Description: MOSFET N-CH 600V 20A TO220FM
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
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R6024ENX R6024ENX Rohm Semiconductor r6024enx-e.pdf Description: MOSFET N-CH 600V 24A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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R6030ENX R6030ENX Rohm Semiconductor r6030enx-e.pdf Description: MOSFET N-CH 600V 30A TO220FM
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Produkt ist nicht verfügbar
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R8005ANX R8005ANX Rohm Semiconductor datasheet?p=R8005ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 5A TO220FM
Rds On (Max) @ Id, Vgs: 2.08Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 40W (Tc)
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R8010ANX R8010ANX Rohm Semiconductor r8010anx.pdf Description: MOSFET N-CH 800V 10A TO220FM
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RCX051N25 RCX051N25 Rohm Semiconductor datasheet?p=RCX051N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 5A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 397 Stücke:
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RCX080N25 RCX080N25 Rohm Semiconductor datasheet?p=RCX080N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 8A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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RCX081N20 RCX081N20 Rohm Semiconductor datasheet?p=RCX081N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 8A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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RCX160N20 RCX160N20 Rohm Semiconductor datasheet?p=RCX160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 16A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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RCX200N20 RCX200N20 Rohm Semiconductor datasheet?p=RCX200N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 20A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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RCX300N20 RCX300N20 Rohm Semiconductor datasheet?p=RCX300N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 277 Stücke:
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100+2.38 EUR
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RCX450N20 RCX450N20 Rohm Semiconductor datasheet?p=RCX450N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 45A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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RCX511N25 RCX511N25 Rohm Semiconductor datasheet?p=RCX511N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 51A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 314 Stücke:
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3+8.13 EUR
10+5.36 EUR
50+4.15 EUR
100+3.77 EUR
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RCX700N20 RCX700N20 Rohm Semiconductor datasheet?p=RCX700N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 70A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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ZDX050N50 ZDX050N50 Rohm Semiconductor datasheet?p=ZDX050N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 107 Stücke:
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11+1.93 EUR
100+1.29 EUR
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BU97950FUV-BZE2 bu97950fuv-e.pdf
BU97950FUV-BZE2
Hersteller: Rohm Semiconductor
Description: IC LCD DVR 35X8COM IND 48TSSOP
Produkt ist nicht verfügbar
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BU9795AKS2-E2 bu9795afv-e.pdf
BU9795AKS2-E2
Hersteller: Rohm Semiconductor
Description: IC LCD DVR 35X4COM 3WIRE 52SQFP
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BU9799KV-BZE2 bu9799kv-e.pdf
BU9799KV-BZE2
Hersteller: Rohm Semiconductor
Description: IC LCD DVR 50X4COM IND 64VQFP
Produkt ist nicht verfügbar
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BD9G341EFJ-E2 BD9G341EFJ.pdf
BD9G341EFJ-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz ~ 750kHz
Voltage - Input (Max): 76V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 76V
Voltage - Input (Min): 12V
Voltage - Output (Min/Fixed): 1V
Part Status: Obsolete
Produkt ist nicht verfügbar
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BD9G341EFJ-E2 BD9G341EFJ.pdf
BD9G341EFJ-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 50kHz ~ 750kHz
Voltage - Input (Max): 76V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: No
Voltage - Output (Max): 76V
Voltage - Input (Min): 12V
Voltage - Output (Min/Fixed): 1V
Part Status: Obsolete
Produkt ist nicht verfügbar
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RGT40TS65DGC11 rgt40ts65d-e.pdf
RGT40TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
auf Bestellung 426 Stücke:
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AnzahlPrivatkunde
3+7.12 EUR
30+3.9 EUR
120+3.2 EUR
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RGT50TS65DGC11 rgt50ts65d-e.pdf
RGT50TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.94 EUR
30+4.09 EUR
120+3.43 EUR
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RGT60TS65DGC11 rgt60ts65d-e.pdf
RGT60TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/100ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 194 W
auf Bestellung 4 Stücke:
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4+6.7 EUR
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RGT80TS65DGC11 rgt80ts65d-e.pdf
RGT80TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 70A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/119ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 234 W
auf Bestellung 5 Stücke:
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AnzahlPrivatkunde
2+10.64 EUR
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RGTH00TS65DGC11 rgth00ts65d-e
RGTH00TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
Produkt ist nicht verfügbar
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RGTH00TS65GC11 rgth00ts65-e
RGTH00TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247N
auf Bestellung 45 Stücke:
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3+9.59 EUR
10+8.63 EUR
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RGTH40TS65DGC11 rgth40ts65d-e
RGTH40TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 40A TO247N
Produkt ist nicht verfügbar
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RGTH40TS65GC11 rgth40ts65-e
RGTH40TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
auf Bestellung 272 Stücke:
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AnzahlPrivatkunde
4+6.41 EUR
30+3.49 EUR
120+2.84 EUR
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RGTH50TS65DGC11 rgth50ts65d-e
RGTH50TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 50A TO247N
auf Bestellung 188 Stücke:
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AnzahlPrivatkunde
3+7.69 EUR
10+6.9 EUR
100+5.65 EUR
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RGTH50TS65GC11 rgth50ts65-e
RGTH50TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 50A TO247N
auf Bestellung 220 Stücke:
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3+7.35 EUR
10+6.6 EUR
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RGTH60TS65DGC11 rgth60ts65d-e
RGTH60TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 58A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.46 EUR
30+4.7 EUR
120+3.88 EUR
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RGTH80TS65DGC11 rgth80ts65d-e
RGTH80TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 70A TO247N
Produkt ist nicht verfügbar
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RGT40NS65DGTL datasheet?p=RGT40NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGT40NS65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
1000+1.98 EUR
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RGT8BM65DTL rgt8bm65d-e.pdf
RGT8BM65DTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
Produkt ist nicht verfügbar
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RGT8NS65DGTL rgt8ns65d-e.pdf
RGT8NS65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Produkt ist nicht verfügbar
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RGT16NS65DGTL datasheet?p=RGT16NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGT16NS65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.84 EUR
10+3.12 EUR
100+2.13 EUR
500+1.71 EUR
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RGT30NS65DGTL datasheet?p=RGT30NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGT30NS65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 133 W
auf Bestellung 966 Stücke:
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AnzahlPrivatkunde
4+5.81 EUR
10+3.76 EUR
100+2.61 EUR
500+2.11 EUR
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RGT40NS65DGTL datasheet?p=RGT40NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGT40NS65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
auf Bestellung 6903 Stücke:
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AnzahlPrivatkunde
4+6.15 EUR
10+4.02 EUR
100+2.8 EUR
500+2.43 EUR
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RGT8BM65DTL rgt8bm65d-e.pdf
RGT8BM65DTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
auf Bestellung 2140 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.27 EUR
10+3.55 EUR
100+2.82 EUR
500+2.39 EUR
1000+2.02 EUR
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BD9B300MUV-EVK-101 BD9B300MUV-EVK-101%20User%20Guide.pdf
BD9B300MUV-EVK-101
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD9B300
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 2.7V ~ 5.5V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD9B300
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
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BD9B300MUV-E2 datasheet?p=BD9B300MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9B300MUV-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz, 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN016V3030
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.4V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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KDZTFTR5.6B datasheet?p=KDZTF5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZTFTR5.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 1W PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: PMDU
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
Qualification: AEC-Q101
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BD9B300MUV-E2 datasheet?p=BD9B300MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9B300MUV-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz, 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN016V3030
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.4V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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500+1.24 EUR
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KDZTFTR5.6B datasheet?p=KDZTF5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZTFTR5.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: PMDU
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
Qualification: AEC-Q101
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BM60014FV-CE2 Jisso_SSOP-B20W-3-2_Rev004s_E2_Drypack_Multichip(MSL1).pdf
BM60014FV-CE2
Hersteller: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 10V ~ 24V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BM6102FV-CE2 datasheet?p=BM6102FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM6102FV-CE2
Hersteller: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A, 1A
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 14V ~ 20V
Qualification: AEC-Q100
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BM6104FV-CE2 datasheet?p=BM6104FV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM6104FV-CE2
Hersteller: Rohm Semiconductor
Description: DGTL ISO 2.5KV 1CH GT DVR 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5A, 1A
Technology: Magnetic Coupling
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 10V ~ 24V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD14000EFV-EVK-001 BD14000EFV-EVK_UsersGuide-E.pdf
BD14000EFV-EVK-001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD14000
Packaging: Box
Function: Battery Monitor
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD14000
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Secondary Attributes: 8V ~ 24V Supply
Embedded: No
Part Status: Active
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BD14000EFV-CE2 datasheet?p=BD14000EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD14000EFV-CE2
Hersteller: Rohm Semiconductor
Description: IC LSI CELL BALANCE 30HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 30-VSSOP (0.220", 5.60mm Width) Exposed Pad
Number of Cells: 4 ~ 6
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: Series
Operating Temperature: -40°C ~ 105°C
Battery Chemistry: Supercapacitor
Supplier Device Package: 30-HTSSOP-B
Fault Protection: Over Current
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD14000EFV-CE2 datasheet?p=BD14000EFV-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD14000EFV-CE2
Hersteller: Rohm Semiconductor
Description: IC LSI CELL BALANCE 30HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 30-VSSOP (0.220", 5.60mm Width) Exposed Pad
Number of Cells: 4 ~ 6
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: Series
Operating Temperature: -40°C ~ 105°C
Battery Chemistry: Supercapacitor
Supplier Device Package: 30-HTSSOP-B
Fault Protection: Over Current
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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R5005CNX R5005CNX
R5005CNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 5A TO220
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R5007ANX R5007ANX
R5007ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 7A TO220
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R5007FNX r5007fnx-e.pdf
R5007FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 7A TO220
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R5011ANX 2SK2095N-v1.jpg
R5011ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A TO220FM
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
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R5021ANX datasheet?p=R5021ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5021ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 21A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220FM
Produkt ist nicht verfügbar
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R6004ENX r6004enx-e.pdf
R6004ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 107 Stücke:
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7+3.14 EUR
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R6007ENX r6007enx-e.pdf
R6007ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
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5+4.86 EUR
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R6009ENX r6009enx-e.pdf
R6009ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A TO220FM
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
auf Bestellung 397 Stücke:
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3+7.16 EUR
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R6011ENX r6011enx-e.pdf
R6011ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO220FM
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R6015ENX r6015enx-e.pdf
R6015ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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9+2.45 EUR
11+2.02 EUR
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R6020ENX r6020enx-e.pdf
R6020ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
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R6024ENX r6024enx-e.pdf
R6024ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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R6030ENX r6030enx-e.pdf
R6030ENX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 1mA
Produkt ist nicht verfügbar
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R8005ANX datasheet?p=R8005ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8005ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A TO220FM
Rds On (Max) @ Id, Vgs: 2.08Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 40W (Tc)
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5+5.11 EUR
10+3.57 EUR
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R8010ANX r8010anx.pdf
R8010ANX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 10A TO220FM
Produkt ist nicht verfügbar
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RCX051N25 datasheet?p=RCX051N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX051N25
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 5A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 397 Stücke:
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6+3.56 EUR
10+2.26 EUR
100+1.52 EUR
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RCX080N25 datasheet?p=RCX080N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX080N25
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 246 Stücke:
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9+2.39 EUR
11+1.96 EUR
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RCX081N20 datasheet?p=RCX081N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX081N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 8A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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RCX160N20 datasheet?p=RCX160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX160N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 123 Stücke:
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10+2.68 EUR
50+2.02 EUR
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RCX200N20 datasheet?p=RCX200N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX200N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 20A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 118 Stücke:
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10+2.46 EUR
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RCX300N20 datasheet?p=RCX300N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX300N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 30A TO220FM
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 277 Stücke:
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10+2.99 EUR
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RCX450N20 datasheet?p=RCX450N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX450N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 45A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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RCX511N25 datasheet?p=RCX511N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX511N25
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 51A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
auf Bestellung 314 Stücke:
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RCX700N20 datasheet?p=RCX700N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX700N20
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 70A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 75 Stücke:
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3+7.38 EUR
10+6.19 EUR
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ZDX050N50 datasheet?p=ZDX050N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ZDX050N50
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 107 Stücke:
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7+3.03 EUR
11+1.93 EUR
100+1.29 EUR
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