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ZDX080N50 ZDX080N50 Rohm Semiconductor datasheet?p=ZDX080N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
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ZDX130N50 ZDX130N50 Rohm Semiconductor datasheet?p=ZDX130N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 13A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Produkt ist nicht verfügbar
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EM6K31GT2R EM6K31GT2R Rohm Semiconductor em6k31-e.pdf Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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EM6K34T2CR EM6K34T2CR Rohm Semiconductor datasheet?p=EM6K34&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 0.9V Drive
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT6
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ES6U1T2R ES6U1T2R Rohm Semiconductor datasheet?p=ES6U1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 1.3A 6WEMT
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
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ES6U3T2CR ES6U3T2CR Rohm Semiconductor datasheet?p=ES6U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 1.4A WEMT6
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
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HP8KA1TB HP8KA1TB Rohm Semiconductor datasheet?p=HP8KA1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 14A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 10mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 14A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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HS8K11TB HS8K11TB Rohm Semiconductor datasheet?p=HS8K11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 7A/11A HSML
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HSML3030L10
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
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QH8MA2TCR QH8MA2TCR Rohm Semiconductor datasheet?p=QH8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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QS8J13TR QS8J13TR Rohm Semiconductor datasheet?p=QS8J13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 12V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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R5009FNJTL R5009FNJTL Rohm Semiconductor r5009fnjtl-e.pdf Description: MOSFET N-CH 500V 9A LPTS
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R5011FNJTL R5011FNJTL Rohm Semiconductor datasheet?p=R5011FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 11A LPT
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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R5016FNJTL R5016FNJTL Rohm Semiconductor datasheet?p=R5016FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 16A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 325mOhm @ 8A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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R6002ENDTL R6002ENDTL Rohm Semiconductor datasheet?p=R6002END&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 1.7A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
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R6004ENDTL R6004ENDTL Rohm Semiconductor datasheet?p=R6004END&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 4A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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R6004ENJTL R6004ENJTL Rohm Semiconductor datasheet?p=R6004ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
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R6007ENJTL R6007ENJTL Rohm Semiconductor datasheet?p=R6007ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 7A LPTS
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R6009ENJTL R6009ENJTL Rohm Semiconductor datasheet?p=R6009ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Produkt ist nicht verfügbar
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R6011ENJTL R6011ENJTL Rohm Semiconductor r6011enjtl-e.pdf Description: MOSFET N-CH 600V 11A LPTS
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R6012FNJTL R6012FNJTL Rohm Semiconductor datasheet?p=R6012FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 12A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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R6015ENJTL R6015ENJTL Rohm Semiconductor datasheet?p=R6015ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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R6015FNJTL R6015FNJTL Rohm Semiconductor datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
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R6020ENJTL R6020ENJTL Rohm Semiconductor datasheet?p=R6020ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 4658 Stücke:
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R6020FNJTL R6020FNJTL Rohm Semiconductor datasheet?p=R6020FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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R6024ENJTL R6024ENJTL Rohm Semiconductor datasheet?p=R6024ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 24A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RAL025P01TCR RAL025P01TCR Rohm Semiconductor ral025p01tcr-e Description: MOSFET P-CH 12V 2.5A TUMT6
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RCD041N25TL RCD041N25TL Rohm Semiconductor rcd041n25.pdf Description: MOSFET N-CH 250V 4A CPT3
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RCD051N20TL RCD051N20TL Rohm Semiconductor rcd051n20.pdf Description: MOSFET N-CH 200V 5A CPT3
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RCD075N19TL RCD075N19TL Rohm Semiconductor rcd075n19.pdf Description: MOSFET N-CH 190V 7.5A CPT3
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RCJ081N20TL RCJ081N20TL Rohm Semiconductor datasheet?p=RCJ081N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 8A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
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RCJ120N20TL RCJ120N20TL Rohm Semiconductor datasheet?p=RCJ120N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 12A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 325mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Produkt ist nicht verfügbar
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RCJ120N25TL RCJ120N25TL Rohm Semiconductor datasheet?p=RCJ120N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 12A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 884 Stücke:
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RCJ220N25TL RCJ220N25TL Rohm Semiconductor datasheet?p=RCJ220N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 22A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 646 Stücke:
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RE1C001ZPTL RE1C001ZPTL Rohm Semiconductor datasheet?p=RE1C001ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 100MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
auf Bestellung 10609 Stücke:
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RE1C002UNTCL RE1C002UNTCL Rohm Semiconductor re1c002untcl-e.pdf Description: MOSFET N-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 618836 Stücke:
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RE1E002SPTCL RE1E002SPTCL Rohm Semiconductor datasheet?p=RE1E002SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 250MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
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RF4C050APTR RF4C050APTR Rohm Semiconductor datasheet?p=RF4C050AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2274 Stücke:
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500+0.65 EUR
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RK7002BMT116 RK7002BMT116 Rohm Semiconductor datasheet?p=RK7002BM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Qualification: AEC-Q101
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154+0.13 EUR
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RQ1C065UNTR RQ1C065UNTR Rohm Semiconductor datasheet?p=RQ1C065UN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 6.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 2955 Stücke:
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RQ1C075UNTR RQ1C075UNTR Rohm Semiconductor datasheet?p=RQ1C075UN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 7.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RQ3E070BNTB RQ3E070BNTB Rohm Semiconductor rq3e070bntb-e.pdf Description: MOSFET N-CH 30V 7A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
auf Bestellung 7341 Stücke:
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24+0.88 EUR
31+0.69 EUR
100+0.42 EUR
500+0.38 EUR
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RQ3E080BNTB RQ3E080BNTB Rohm Semiconductor datasheet?p=RQ3E080BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 8A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 17700 Stücke:
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RQ3E100BNTB RQ3E100BNTB Rohm Semiconductor rq3e100bntb-e.pdf Description: MOSFET N-CH 30V 10A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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27+0.8 EUR
50+0.58 EUR
100+0.51 EUR
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RQ3E120BNTB RQ3E120BNTB Rohm Semiconductor rq3e120bntb-e.pdf Description: MOSFET N-CH 30V 12A HSMT8
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RQ3E130BNTB RQ3E130BNTB Rohm Semiconductor datasheet?p=RQ3E130BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 13A 8HSMT
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2950 Stücke:
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20+1.05 EUR
100+0.68 EUR
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RQ3E150BNTB RQ3E150BNTB Rohm Semiconductor rq3e150bntb-e.pdf Description: MOSFET N-CH 30V 15A 8HSMT
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RQ3E160ADTB RQ3E160ADTB Rohm Semiconductor rq3e160adtb-e.pdf Description: MOSFET N-CH 30V 16A 8HSMT
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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RQ3E180BNTB RQ3E180BNTB Rohm Semiconductor rq3e180bntb-e.pdf Description: MOSFET N-CHANNEL 30V 39A 8HSMT
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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RQ3G100GNTB RQ3G100GNTB Rohm Semiconductor datasheet?p=RQ3G100GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 40V 10A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 20 V
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RQ5A030APTL RQ5A030APTL Rohm Semiconductor datasheet?p=RQ5A030AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 3A TSMT3
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
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RQ5E035ATTCL RQ5E035ATTCL Rohm Semiconductor datasheet?p=RQ5E035AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
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RQ5E035BNTCL RQ5E035BNTCL Rohm Semiconductor datasheet?p=RQ5E035BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
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RQ5H020SPTL RQ5H020SPTL Rohm Semiconductor datasheet?p=RQ5H020SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 45V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
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RQ5L015SPTL RQ5L015SPTL Rohm Semiconductor datasheet?p=RQ5L015SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 60V 1.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
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RQ6C050UNTR RQ6C050UNTR Rohm Semiconductor datasheet?p=RQ6C050UN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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RQ6E035ATTCR RQ6E035ATTCR Rohm Semiconductor datasheet?p=RQ6E035AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 3.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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RQ6E045BNTCR RQ6E045BNTCR Rohm Semiconductor datasheet?p=RQ6E045BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
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RQ6E050ATTCR RQ6E050ATTCR Rohm Semiconductor datasheet?p=RQ6E050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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RQ6P015SPTR RQ6P015SPTR Rohm Semiconductor datasheet?p=RQ6P015SP&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET P-CH 100V 1.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 322 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
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RRF015P03GTL RRF015P03GTL Rohm Semiconductor rrf015p03tl-e.pdf Description: MOSFET P-CH 30V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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ZDX080N50 datasheet?p=ZDX080N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ZDX080N50
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
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ZDX130N50 datasheet?p=ZDX130N50&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ZDX130N50
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 13A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Produkt ist nicht verfügbar
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EM6K31GT2R em6k31-e.pdf
EM6K31GT2R
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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EM6K34T2CR datasheet?p=EM6K34&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EM6K34T2CR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 0.9V Drive
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT6
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ES6U1T2R datasheet?p=ES6U1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ES6U1T2R
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A 6WEMT
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 8330 Stücke:
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ES6U3T2CR datasheet?p=ES6U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ES6U3T2CR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.4A WEMT6
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 7960 Stücke:
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HP8KA1TB datasheet?p=HP8KA1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HP8KA1TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 14A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 10mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 14A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1995 Stücke:
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HS8K11TB datasheet?p=HS8K11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
HS8K11TB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A/11A HSML
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HSML3030L10
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
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QH8MA2TCR datasheet?p=QH8MA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8MA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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QS8J13TR datasheet?p=QS8J13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8J13TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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R5009FNJTL r5009fnjtl-e.pdf
R5009FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 9A LPTS
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R5011FNJTL datasheet?p=R5011FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5011FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A LPT
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1965 Stücke:
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R5016FNJTL datasheet?p=R5016FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5016FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 16A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 325mOhm @ 8A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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R6002ENDTL datasheet?p=R6002END&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6002ENDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 1.7A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Produkt ist nicht verfügbar
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R6004ENDTL datasheet?p=R6004END&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6004ENDTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 2521 Stücke:
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R6004ENJTL datasheet?p=R6004ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6004ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
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R6007ENJTL datasheet?p=R6007ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6007ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A LPTS
auf Bestellung 176 Stücke:
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R6009ENJTL datasheet?p=R6009ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6009ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 9A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Produkt ist nicht verfügbar
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R6011ENJTL r6011enjtl-e.pdf
R6011ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A LPTS
auf Bestellung 440 Stücke:
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R6012FNJTL datasheet?p=R6012FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6012FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 938 Stücke:
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R6015ENJTL datasheet?p=R6015ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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R6015FNJTL datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
auf Bestellung 980 Stücke:
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R6020ENJTL datasheet?p=R6020ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 4658 Stücke:
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R6020FNJTL datasheet?p=R6020FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 958 Stücke:
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3+8.13 EUR
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R6024ENJTL datasheet?p=R6024ENJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024ENJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 811 Stücke:
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3+9.34 EUR
10+6.19 EUR
100+4.39 EUR
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RAL025P01TCR ral025p01tcr-e
RAL025P01TCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TUMT6
Produkt ist nicht verfügbar
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RCD041N25TL rcd041n25.pdf
RCD041N25TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 4A CPT3
auf Bestellung 2495 Stücke:
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RCD051N20TL rcd051n20.pdf
RCD051N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 5A CPT3
auf Bestellung 2085 Stücke:
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RCD075N19TL rcd075n19.pdf
RCD075N19TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 190V 7.5A CPT3
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RCJ081N20TL datasheet?p=RCJ081N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ081N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 8A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
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RCJ120N20TL datasheet?p=RCJ120N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ120N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 12A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 325mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Produkt ist nicht verfügbar
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RCJ120N25TL datasheet?p=RCJ120N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ120N25TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 12A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 884 Stücke:
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8+2.84 EUR
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RCJ220N25TL datasheet?p=RCJ220N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ220N25TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 22A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 646 Stücke:
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RE1C001ZPTL datasheet?p=RE1C001ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RE1C001ZPTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 100MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
auf Bestellung 10609 Stücke:
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46+0.46 EUR
76+0.27 EUR
122+0.17 EUR
500+0.13 EUR
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RE1C002UNTCL re1c002untcl-e.pdf
RE1C002UNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 618836 Stücke:
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50+0.42 EUR
84+0.25 EUR
118+0.18 EUR
135+0.15 EUR
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RE1E002SPTCL datasheet?p=RE1E002SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RE1E002SPTCL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 250MA EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
auf Bestellung 12051 Stücke:
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38+0.57 EUR
62+0.35 EUR
87+0.24 EUR
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RF4C050APTR datasheet?p=RF4C050AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4C050APTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 2274 Stücke:
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11+2.07 EUR
17+1.3 EUR
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RK7002BMT116 datasheet?p=RK7002BM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RK7002BMT116
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4132 Stücke:
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59+0.36 EUR
95+0.23 EUR
133+0.15 EUR
154+0.13 EUR
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RQ1C065UNTR datasheet?p=RQ1C065UN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ1C065UNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 6.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 2955 Stücke:
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17+1.3 EUR
19+1.11 EUR
100+0.82 EUR
500+0.65 EUR
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RQ1C075UNTR datasheet?p=RQ1C075UN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ1C075UNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 7.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RQ3E070BNTB rq3e070bntb-e.pdf
RQ3E070BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
auf Bestellung 7341 Stücke:
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24+0.88 EUR
31+0.69 EUR
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RQ3E080BNTB datasheet?p=RQ3E080BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E080BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 17700 Stücke:
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17+1.26 EUR
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RQ3E100BNTB rq3e100bntb-e.pdf
RQ3E100BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 11216 Stücke:
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17+1.3 EUR
27+0.8 EUR
50+0.58 EUR
100+0.51 EUR
500+0.39 EUR
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RQ3E120BNTB rq3e120bntb-e.pdf
RQ3E120BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12A HSMT8
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RQ3E130BNTB datasheet?p=RQ3E130BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E130BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8HSMT
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2950 Stücke:
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13+1.7 EUR
20+1.05 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.46 EUR
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RQ3E150BNTB rq3e150bntb-e.pdf
RQ3E150BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
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RQ3E160ADTB rq3e160adtb-e.pdf
RQ3E160ADTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 16A 8HSMT
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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RQ3E180BNTB rq3e180bntb-e.pdf
RQ3E180BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 39A 8HSMT
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5051 Stücke:
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AnzahlPrivatkunde
19+1.12 EUR
100+0.75 EUR
500+0.62 EUR
1000+0.57 EUR
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RQ3G100GNTB datasheet?p=RQ3G100GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3G100GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 40V 10A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 20 V
auf Bestellung 32267 Stücke:
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13+1.63 EUR
21+1.01 EUR
50+0.74 EUR
100+0.65 EUR
500+0.5 EUR
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RQ5A030APTL datasheet?p=RQ5A030AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5A030APTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 3A TSMT3
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
auf Bestellung 13123 Stücke:
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20+1.09 EUR
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RQ5E035ATTCL datasheet?p=RQ5E035AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E035ATTCL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
auf Bestellung 42538 Stücke:
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20+1.09 EUR
31+0.68 EUR
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RQ5E035BNTCL datasheet?p=RQ5E035BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E035BNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
auf Bestellung 12678 Stücke:
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27+0.8 EUR
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60+0.36 EUR
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RQ5H020SPTL datasheet?p=RQ5H020SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5H020SPTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 7530 Stücke:
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13+1.7 EUR
20+1.05 EUR
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RQ5L015SPTL datasheet?p=RQ5L015SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5L015SPTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 60V 1.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
auf Bestellung 4168 Stücke:
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16+1.34 EUR
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RQ6C050UNTR datasheet?p=RQ6C050UN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6C050UNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
auf Bestellung 15784 Stücke:
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15+1.49 EUR
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RQ6E035ATTCR datasheet?p=RQ6E035AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E035ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2440 Stücke:
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21+1 EUR
34+0.62 EUR
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500+0.3 EUR
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RQ6E045BNTCR datasheet?p=RQ6E045BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E045BNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 29 Stücke:
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RQ6E050ATTCR datasheet?p=RQ6E050AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E050ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 6170 Stücke:
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RQ6P015SPTR datasheet?p=RQ6P015SP&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RQ6P015SPTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 322 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
auf Bestellung 33083 Stücke:
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10+2.31 EUR
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RRF015P03GTL rrf015p03tl-e.pdf
RRF015P03GTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
auf Bestellung 9752 Stücke:
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19+1.15 EUR
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