Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (103516) > Seite 779 nach 1726
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RF2001NS2DFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 20A LPDSReverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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RB050LAM-60TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTMPackage / Case: SOD-128 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 26.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
auf Bestellung 12659 Stücke: Lieferzeit 10-14 Tag (e) |
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RB085BM-40FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 40V 10A TO252Current - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Qualification: AEC-Q101 Grade: Automotive Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 12.3 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 6381 Stücke: Lieferzeit 10-14 Tag (e) |
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RB160VYM-60FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 1A TUMD2MQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 40 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 6.65 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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RBQ20BM45AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 20A TO252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 200 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 2081 Stücke: Lieferzeit 10-14 Tag (e) |
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RBQ30NS45AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 45V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 647 Stücke: Lieferzeit 10-14 Tag (e) |
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RF501BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 5A TO252Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io): 5A Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Technology: Standard |
auf Bestellung 4666 Stücke: Lieferzeit 10-14 Tag (e) |
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RK7002BMHZGT116 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12166 Stücke: Lieferzeit 10-14 Tag (e) |
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RRL025P03FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2.5A TUMT6Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 |
auf Bestellung 815 Stücke: Lieferzeit 10-14 Tag (e) |
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SP8M51FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A 8SOPConfiguration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
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UM6K31NFHATCN | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 0.25A UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: UMT6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1325 Stücke: Lieferzeit 10-14 Tag (e) |
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RB238NS100FHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 40A LPDSCurrent - Reverse Leakage @ Vr: 20 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 40A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 24.7 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
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RBQ30NS65AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 65V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 450 µA @ 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 65 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 16.1 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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BD83733HFP-MTR | Rohm Semiconductor |
Description: IC LED DRVR LIN PWM 500MA HRP7Packaging: Cut Tape (CT) Package / Case: HRP-7 (7 Leads + Tab) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100Hz ~ 5kHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: HRP7 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1835 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24A02FJ-WME2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJQualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 256 x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Grade: Automotive Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 2Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 324 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24A08F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOPDigiKey Programmable: Not Verified Memory Organization: 1K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 8Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 945 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24A16F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOPQualification: AEC-Q100 Grade: Automotive Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Memory Organization: 2K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM |
auf Bestellung 621 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24A32F-WME2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOPDigiKey Programmable: Not Verified Memory Organization: 4K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 4919 Stücke: Lieferzeit 10-14 Tag (e) |
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BR25H640FVT-2ACE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT SPI 8TSSOPBGrade: Automotive Supplier Device Package: 8-TSSOP-B Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 8K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RB558VYM150FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 150V 500MA TUMD2MQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 500mA Technology: Schottky Reverse Recovery Time (trr): 6.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 15354 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS40-04HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BAS40-05HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BAS40-06HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1423 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS40HMFHT116 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 120MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 120mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
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BAT54AHMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 30V 200MA SSD3 |
auf Bestellung 1431 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT54HMFHT116 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 200MA SSD3Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SSD3 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 12pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
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BAT54SHMFHT116 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 200MA SSD3Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SSD3 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Series Connection Technology: Schottky Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV170HMFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 215MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BD00C0AWHFP-CTR | Rohm Semiconductor |
Description: IC REG LINEAR POS ADJ 1A HRP-5Current - Supply (Max): 2.5 mA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.5V @ 500mA PSRR: 55dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 1V Voltage - Output (Max): 15V Supplier Device Package: HRP-5 Number of Regulators: 1 Voltage - Input (Max): 26.5V Current - Quiescent (Iq): 2.5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 1A Mounting Type: Surface Mount Output Type: Adjustable Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 942 Stücke: Lieferzeit 10-14 Tag (e) |
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BD81842MUV-ME2 | Rohm Semiconductor |
Description: AUTOMOTIVE PANEL POWER MANAGEMENPart Status: Active Supplier Device Package: VQFN24SV4040 Current - Supply: 1.2mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive Applications: TFT-LCD Panels |
auf Bestellung 2380 Stücke: Lieferzeit 10-14 Tag (e) |
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RB055LAM-40TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 3A PMDTMQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 14.6 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
auf Bestellung 9631 Stücke: Lieferzeit 10-14 Tag (e) |
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RF2001NS3DFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 300V 20A LPDSCurrent - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Voltage - DC Reverse (Vr) (Max): 300 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
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RSS060P05FRATB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 6A 8SOP |
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RSS065N06FRATB | Rohm Semiconductor |
Description: MOSFET N-CH 60V 6.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
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RSS070N05FRATB | Rohm Semiconductor |
Description: MOSFET N-CH 45V 7A 8SOPQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RB088BM150FHTL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODECurrent - Reverse Leakage @ Vr: 15 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 10.7 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 3145 Stücke: Lieferzeit 10-14 Tag (e) |
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RB098BM150FHTL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE (CORRESPOMounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 7 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RB225NS-40FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 27.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 327 Stücke: Lieferzeit 10-14 Tag (e) |
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RB400DFHT146 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 500MA SMD3Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMD3 Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 130pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 7.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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RB400VYM-50FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 500MA TUMD2MQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 130pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 7.35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 3167 Stücke: Lieferzeit 10-14 Tag (e) |
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RB420DFHT146 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MA SMD3Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMD3 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 6pF @ 10V, 1MHz Technology: Schottky |
auf Bestellung 2781 Stücke: Lieferzeit 10-14 Tag (e) |
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RBQ10BM45AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 10A TO252Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 150 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 45 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1567 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN20NS3SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 350V 20A LPDSCurrent - Reverse Leakage @ Vr: 10 µA @ 350 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A Voltage - DC Reverse (Vr) (Max): 350 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 412pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN20NS6SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 20A LPDSCurrent - Average Rectified (Io): 20A Capacitance @ Vr, F: 322pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
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RRE02VTM4SFHTR | Rohm Semiconductor |
Description: DIODE GP 400V 200MA TUMD2SMCurrent - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2SM Current - Average Rectified (Io): 200mA Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
auf Bestellung 53890 Stücke: Lieferzeit 10-14 Tag (e) |
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RTL020P02FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TUMT6Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 4358 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN20NS4SFHTL | Rohm Semiconductor |
Description: DIODE STANDARD 430V 20A LPDSQualification: AEC-Q101 Grade: Automotive Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 430 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Voltage - DC Reverse (Vr) (Max): 430 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 268pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns |
auf Bestellung 967 Stücke: Lieferzeit 10-14 Tag (e) |
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BD83732HFP-MTR | Rohm Semiconductor |
Description: IC LED DRVR LIN PWM 500MA HRP7Packaging: Cut Tape (CT) Package / Case: HRP-7 (7 Leads + Tab) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100Hz ~ 5kHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: HRP7 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
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RB058LAM-60TFTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTMQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 4 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 35.3 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
auf Bestellung 5430 Stücke: Lieferzeit 10-14 Tag (e) |
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RB095BM-90FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 90V 6A TO252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 150 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 8.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 13395 Stücke: Lieferzeit 10-14 Tag (e) |
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RB160VYM-40FHTR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 1A TUMD2MQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 7.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 9212 Stücke: Lieferzeit 10-14 Tag (e) |
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RB238NS150FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 150V 40A LPDSPart Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 40A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 20.2 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 30 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 150 V Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 1733 Stücke: Lieferzeit 10-14 Tag (e) |
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RF05VYM1SFHTR | Rohm Semiconductor |
Description: DIODE GEN PURP 100V 500MA TUMD2MCurrent - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TUMD2M Current - Average Rectified (Io): 500mA Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
auf Bestellung 11825 Stücke: Lieferzeit 10-14 Tag (e) |
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RF202LAM2STFTR | Rohm Semiconductor |
Description: DIODE STANDARD 200V 2A PMDTMCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 2A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 7016 Stücke: Lieferzeit 10-14 Tag (e) |
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RF301BM2SFHTL | Rohm Semiconductor |
Description: SUPER FAST RECOVERY DIODES |
auf Bestellung 2301 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RF302LAM2STFTR | Rohm Semiconductor |
Description: DIODE STANDARD 200V 3A PMDTMQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
auf Bestellung 12301 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN1LAM7STFTR | Rohm Semiconductor |
Description: DIODE GEN PURP 700V 800MA PMDTMCurrent - Average Rectified (Io): 800mA Technology: Standard Reverse Recovery Time (trr): 80 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 700 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 700 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM |
auf Bestellung 17698 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN3BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252Supplier Device Package: TO-252 Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RR1VWM6STFTR | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 1A PMDEQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: 175°C (Max) Supplier Device Package: PMDE Current - Average Rectified (Io): 1A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
auf Bestellung 2728 Stücke: Lieferzeit 10-14 Tag (e) |
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BD1HC500FVM-CTR | Rohm Semiconductor |
Description: IC PWR SWITCH P-CHAN 1:1 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 500mOhm Input Type: CMOS Voltage - Supply (Vcc/Vdd): 4V ~ 18V Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-MSOP Fault Protection: Over Current, Over Temperature, UVLO Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4132 Stücke: Lieferzeit 10-14 Tag (e) |
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| RF2001NS2DFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 20A LPDS
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 200V 20A LPDS
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.54 EUR |
| 10+ | 3.61 EUR |
| 100+ | 2.51 EUR |
| RB050LAM-60TFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 26.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 60V 3A PMDTM
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 26.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 12659 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 21+ | 0.84 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |
| RB085BM-40FHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 10A TO252
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 12.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 40V 10A TO252
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 12.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 6381 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.94 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.91 EUR |
| RB160VYM-60FHTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 6.65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 1A TUMD2M
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 6.65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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| RBQ20BM45AFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 20A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 20A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2081 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.02 EUR |
| 11+ | 1.65 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.89 EUR |
| RBQ30NS45AFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 45V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 647 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.56 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.25 EUR |
| RF501BM2SFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Description: DIODE GEN PURP 200V 5A TO252
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
auf Bestellung 4666 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.88 EUR |
| 12+ | 1.55 EUR |
| 100+ | 1.2 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.83 EUR |
| RK7002BMHZGT116 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12166 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 0.3 EUR |
| 97+ | 0.18 EUR |
| 155+ | 0.11 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.073 EUR |
| RRL025P03FRATR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TUMT6
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2.5A TUMT6
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 815 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.27 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| SP8M51FRATB |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N/P-CH 100V 3A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UM6K31NFHATCN |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.25A UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1325 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 38+ | 0.48 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| RB238NS100FHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 40A LPDS
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 24.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOTT 100V 40A LPDS
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 24.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RBQ30NS65AFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 16.1 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 65V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 450 µA @ 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 65 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 16.1 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.9 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| BD83733HFP-MTR |
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Hersteller: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.35 EUR |
| 10+ | 3.25 EUR |
| 25+ | 2.97 EUR |
| 100+ | 2.67 EUR |
| 250+ | 2.53 EUR |
| 500+ | 2.44 EUR |
| 1000+ | 2.37 EUR |
| BR24A02FJ-WME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 2KBIT I2C 400KHZ 8SOPJ
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Grade: Automotive
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 324 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.11 EUR |
| 18+ | 1.01 EUR |
| 25+ | 1 EUR |
| 50+ | 0.99 EUR |
| 100+ | 0.89 EUR |
| 250+ | 0.88 EUR |
| BR24A08F-WME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 14+ | 1.28 EUR |
| 25+ | 1.26 EUR |
| 50+ | 1.25 EUR |
| 100+ | 1.12 EUR |
| 250+ | 1.11 EUR |
| 500+ | 1.1 EUR |
| BR24A16F-WME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
auf Bestellung 621 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 13+ | 1.44 EUR |
| 25+ | 1.4 EUR |
| 50+ | 1.37 EUR |
| 100+ | 1.34 EUR |
| 250+ | 1.3 EUR |
| 500+ | 1.27 EUR |
| BR24A32F-WME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC EEPROM 32KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 4919 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.82 EUR |
| 10+ | 2.64 EUR |
| 25+ | 2.57 EUR |
| 50+ | 2.51 EUR |
| 100+ | 2.45 EUR |
| 250+ | 2.38 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.26 EUR |
| BR25H640FVT-2ACE2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT SPI 8TSSOPB
Grade: Automotive
Supplier Device Package: 8-TSSOP-B
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 64KBIT SPI 8TSSOPB
Grade: Automotive
Supplier Device Package: 8-TSSOP-B
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.45 EUR |
| 10+ | 2.23 EUR |
| 25+ | 2.17 EUR |
| 50+ | 2.16 EUR |
| 100+ | 1.93 EUR |
| 250+ | 1.92 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.81 EUR |
| RB558VYM150FHTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Schottky
Reverse Recovery Time (trr): 6.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 150V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Schottky
Reverse Recovery Time (trr): 6.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 15354 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.88 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| BAS40-04HMFHT116 |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BAS40-05HMFHT116 |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS40-06HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1423 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 110+ | 0.16 EUR |
| 178+ | 0.099 EUR |
| 500+ | 0.072 EUR |
| 1000+ | 0.063 EUR |
| BAS40HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 120mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 120MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 120mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BAT54AHMFHT116 |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
auf Bestellung 1431 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BAT54HMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA SSD3
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 30V 200MA SSD3
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT54SHMFHT116 |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 200MA SSD3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 30V 200MA SSD3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SSD3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BAV170HMFHT116 |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD00C0AWHFP-CTR |
![]() |
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR POS ADJ 1A HRP-5
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Voltage - Output (Max): 15V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR POS ADJ 1A HRP-5
Current - Supply (Max): 2.5 mA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Voltage - Output (Max): 15V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 26.5V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 942 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.41 EUR |
| 10+ | 1.77 EUR |
| 25+ | 1.61 EUR |
| 100+ | 1.43 EUR |
| 250+ | 1.34 EUR |
| 500+ | 1.29 EUR |
| BD81842MUV-ME2 |
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Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE PANEL POWER MANAGEMEN
Part Status: Active
Supplier Device Package: VQFN24SV4040
Current - Supply: 1.2mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Applications: TFT-LCD Panels
Description: AUTOMOTIVE PANEL POWER MANAGEMEN
Part Status: Active
Supplier Device Package: VQFN24SV4040
Current - Supply: 1.2mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Applications: TFT-LCD Panels
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.64 EUR |
| 10+ | 5.04 EUR |
| 25+ | 4.64 EUR |
| 100+ | 4.2 EUR |
| 250+ | 3.99 EUR |
| 500+ | 3.86 EUR |
| 1000+ | 3.76 EUR |
| RB055LAM-40TFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 14.6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 3A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 14.6 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 9631 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| RF2001NS3DFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 300V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 300V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS060P05FRATB |
![]() |
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 6A 8SOP
Description: MOSFET P-CH 45V 6A 8SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS065N06FRATB |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| RSS070N05FRATB |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 7A 8SOP
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 45V 7A 8SOP
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB088BM150FHTL |
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Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Current - Reverse Leakage @ Vr: 15 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 10.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: SCHOTTKY BARRIER DIODE
Current - Reverse Leakage @ Vr: 15 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 10.7 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3145 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.46 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.72 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.12 EUR |
| RB098BM150FHTL |
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Hersteller: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (CORRESPO
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 7 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: SCHOTTKY BARRIER DIODE (CORRESPO
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 7 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| RB225NS-40FHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 27.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 27.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 327 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.47 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.52 EUR |
| RB400DFHT146 |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA SMD3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 7.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 500MA SMD3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 7.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB400VYM-50FHTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 7.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 500MA TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 7.35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 3167 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 43+ | 0.41 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| RB420DFHT146 |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA SMD3
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
Description: DIODE SCHOTTKY 40V 100MA SMD3
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
auf Bestellung 2781 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 58+ | 0.31 EUR |
| 108+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| RBQ10BM45AFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 10A TO252
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1567 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.37 EUR |
| 16+ | 1.11 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.6 EUR |
| RFN20NS3SFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 412pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: DIODE STANDARD 350V 20A LPDS
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 412pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.45 EUR |
| RFN20NS6SFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 600V 20A LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 322pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Description: DIODE STANDARD 600V 20A LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 322pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.15 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.2 EUR |
| RRE02VTM4SFHTR |
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Hersteller: Rohm Semiconductor
Description: DIODE GP 400V 200MA TUMD2SM
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: DIODE GP 400V 200MA TUMD2SM
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2SM
Current - Average Rectified (Io): 200mA
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 53890 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 30+ | 0.59 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.17 EUR |
| RTL020P02FRATR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 20V 2A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4358 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |
| RFN20NS4SFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 430V 20A LPDS
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 430 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 268pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Description: DIODE STANDARD 430V 20A LPDS
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 430 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 268pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| BD83732HFP-MTR |
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Hersteller: Rohm Semiconductor
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRVR LIN PWM 500MA HRP7
Packaging: Cut Tape (CT)
Package / Case: HRP-7 (7 Leads + Tab)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100Hz ~ 5kHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: HRP7
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.35 EUR |
| 10+ | 3.25 EUR |
| 25+ | 2.97 EUR |
| 100+ | 2.67 EUR |
| 250+ | 2.53 EUR |
| 500+ | 2.44 EUR |
| 1000+ | 2.37 EUR |
| RB058LAM-60TFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 35.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 3A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 35.3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 5430 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 27+ | 0.65 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| RB095BM-90FHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 90V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 8.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 90V 6A TO252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 8.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 13395 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 15+ | 1.25 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.67 EUR |
| RB160VYM-40FHTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 7.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 1A TUMD2M
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 7.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 9212 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 45+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| RB238NS150FHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 150V 40A LPDS
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 20.2 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY SCHOTT 150V 40A LPDS
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 20.2 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1733 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.05 EUR |
| 10+ | 2.9 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.95 EUR |
| RF05VYM1SFHTR |
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Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 100V 500MA TUMD2M
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 100V 500MA TUMD2M
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TUMD2M
Current - Average Rectified (Io): 500mA
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 11825 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 40+ | 0.44 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.14 EUR |
| RF202LAM2STFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 2A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 200V 2A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 7016 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.38 EUR |
| RF301BM2SFHTL |
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Hersteller: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODES
Description: SUPER FAST RECOVERY DIODES
auf Bestellung 2301 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| RF302LAM2STFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 3A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 200V 3A PMDTM
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 12301 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| RFN1LAM7STFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDTM
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 700 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Description: DIODE GEN PURP 700V 800MA PMDTM
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 700 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
auf Bestellung 17698 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.36 EUR |
| RFN3BM6SFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Description: DIODE GEN PURP 600V 3A TO252
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.51 EUR |
| 15+ | 1.23 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.66 EUR |
| RR1VWM6STFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1A PMDE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: PMDE
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1A PMDE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: PMDE
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 2728 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.19 EUR |
| BD1HC500FVM-CTR |
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Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: CMOS
Voltage - Supply (Vcc/Vdd): 4V ~ 18V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Over Current, Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Input Type: CMOS
Voltage - Supply (Vcc/Vdd): 4V ~ 18V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP
Fault Protection: Over Current, Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4132 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 14+ | 1.28 EUR |
| 25+ | 1.16 EUR |
| 100+ | 1.02 EUR |
| 250+ | 0.96 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.9 EUR |



























