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KDZVTR6.8B KDZVTR6.8B Rohm Semiconductor kdzv10b.pdf Description: DIODE ZENER 6.8V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR7.5B KDZVTR7.5B Rohm Semiconductor kdzvtr7.5b-e.pdf Description: DIODE ZENER 7.5V 1W PMDU
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR8.2B KDZVTR8.2B Rohm Semiconductor kdzvtr8.2b-e.pdf Description: DIODE ZENER 8.2V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR9.1B KDZVTR9.1B Rohm Semiconductor kdzv10b.pdf Description: DIODE ZENER 9.1V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR10B KDZVTR10B Rohm Semiconductor datasheet?p=KDZV10B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 10.6V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10.6 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
auf Bestellung 12421 Stücke:
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29+0.91 EUR
38+ 0.7 EUR
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KDZVTR11B KDZVTR11B Rohm Semiconductor kdzvtr11b-e Description: DIODE ZENER 11V 1W PMDU
auf Bestellung 840 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR12B KDZVTR12B Rohm Semiconductor datasheet?p=KDZV12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12.75V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12.75 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
auf Bestellung 8397 Stücke:
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KDZVTR13B KDZVTR13B Rohm Semiconductor kdzvtr13b-e Description: DIODE ZENER 13V 1W PMDU
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KDZVTR16B KDZVTR16B Rohm Semiconductor kdzvtr16b-e Description: DIODE ZENER 16V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR18B KDZVTR18B Rohm Semiconductor datasheet?p=KDZV18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 19.15V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 31622 Stücke:
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28+0.94 EUR
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KDZVTR20B KDZVTR20B Rohm Semiconductor datasheet?p=KDZV20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 21.2V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 21.2 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 15 V
auf Bestellung 5733 Stücke:
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29+0.91 EUR
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KDZVTR22B KDZVTR22B Rohm Semiconductor kdzvtr22b-e.pdf Description: DIODE ZENER 23.85V 1W PMDU
auf Bestellung 2058 Stücke:
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KDZVTR27B KDZVTR27B Rohm Semiconductor kdzvtr27b-e.pdf Description: DIODE ZENER 27V 1W PMDU
auf Bestellung 3006 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR3.6B KDZVTR3.6B Rohm Semiconductor kdzvtr3.6b-e.pdf Description: DIODE ZENER 3.6V 1W PMDU
auf Bestellung 9457 Stücke:
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KDZVTR3.9B KDZVTR3.9B Rohm Semiconductor kdzv10b.pdf Description: DIODE ZENER 3.9V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR30B KDZVTR30B Rohm Semiconductor datasheet?p=KDZV30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 32V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 32 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
auf Bestellung 4795 Stücke:
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29+0.91 EUR
37+ 0.71 EUR
100+ 0.43 EUR
500+ 0.39 EUR
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Mindestbestellmenge: 29
KDZVTR33B KDZVTR33B Rohm Semiconductor kdzvtr33b-e.pdf Description: DIODE ZENER 33V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR4.3B KDZVTR4.3B Rohm Semiconductor datasheet?p=KDZV4.3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 4.55V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 4.55 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
38+ 0.7 EUR
100+ 0.42 EUR
500+ 0.39 EUR
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KDZVTR4.7B KDZVTR4.7B Rohm Semiconductor datasheet?p=KDZV4.7B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 4.95V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 4.95 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 11856 Stücke:
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29+0.91 EUR
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KDZVTR5.1B KDZVTR5.1B Rohm Semiconductor datasheet?p=KDZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.4V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.4 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 8036 Stücke:
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29+0.91 EUR
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500+ 0.39 EUR
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Mindestbestellmenge: 29
KDZVTR5.6B KDZVTR5.6B Rohm Semiconductor kdzvtr5.6b-e.pdf Description: DIODE ZENER 5.95V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.95 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
auf Bestellung 30034 Stücke:
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28+0.94 EUR
35+ 0.76 EUR
100+ 0.52 EUR
500+ 0.39 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 28
KDZVTR6.2B KDZVTR6.2B Rohm Semiconductor kdzvtr6.2b-e.pdf Description: DIODE ZENER 6.2V 1W PMDU
auf Bestellung 298 Stücke:
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28+0.94 EUR
35+ 0.75 EUR
100+ 0.51 EUR
Mindestbestellmenge: 28
KDZVTR6.8B KDZVTR6.8B Rohm Semiconductor kdzv10b.pdf Description: DIODE ZENER 6.8V 1W PMDU
auf Bestellung 2650 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR7.5B KDZVTR7.5B Rohm Semiconductor kdzvtr7.5b-e.pdf Description: DIODE ZENER 7.5V 1W PMDU
auf Bestellung 8029 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR8.2B KDZVTR8.2B Rohm Semiconductor kdzvtr8.2b-e.pdf Description: DIODE ZENER 8.2V 1W PMDU
auf Bestellung 2745 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR9.1B KDZVTR9.1B Rohm Semiconductor kdzv10b.pdf Description: DIODE ZENER 9.1V 1W PMDU
auf Bestellung 1524 Stücke:
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KDZVTR11B KDZVTR11B Rohm Semiconductor kdzvtr11b-e Description: DIODE ZENER 11V 1W PMDU
auf Bestellung 840 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR13B KDZVTR13B Rohm Semiconductor kdzvtr13b-e Description: DIODE ZENER 13V 1W PMDU
auf Bestellung 6144 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR16B KDZVTR16B Rohm Semiconductor kdzvtr16b-e Description: DIODE ZENER 16V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR6.8B KDZVTR6.8B Rohm Semiconductor kdzv10b.pdf Description: DIODE ZENER 6.8V 1W PMDU
auf Bestellung 2650 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR9.1B KDZVTR9.1B Rohm Semiconductor kdzv10b.pdf Description: DIODE ZENER 9.1V 1W PMDU
auf Bestellung 1524 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR11B KDZVTR11B Rohm Semiconductor kdzvtr11b-e Description: DIODE ZENER 11V 1W PMDU
Produkt ist nicht verfügbar
BD63715AEFV-E2 BD63715AEFV-E2 Rohm Semiconductor bd63715aefv-e.pdf Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Produkt ist nicht verfügbar
BD63720AEFV-E2 BD63720AEFV-E2 Rohm Semiconductor bd63720aefv-e.pdf Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Produkt ist nicht verfügbar
BD63715AEFV-E2 BD63715AEFV-E2 Rohm Semiconductor bd63715aefv-e.pdf Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
auf Bestellung 2482 Stücke:
Lieferzeit 21-28 Tag (e)
BD63720AEFV-E2 BD63720AEFV-E2 Rohm Semiconductor bd63720aefv-e.pdf Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
auf Bestellung 2162 Stücke:
Lieferzeit 21-28 Tag (e)
RF4E070BNTR RF4E070BNTR Rohm Semiconductor datasheet?p=RF4E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
Produkt ist nicht verfügbar
RF4E070GNTR RF4E070GNTR Rohm Semiconductor datasheet?p=RF4E070GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Produkt ist nicht verfügbar
RF4E080BNTR RF4E080BNTR Rohm Semiconductor datasheet?p=RF4E080BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
RF4E080GNTR RF4E080GNTR Rohm Semiconductor datasheet?p=RF4E080GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Produkt ist nicht verfügbar
RF4E110BNTR RF4E110BNTR Rohm Semiconductor datasheet?p=RF4E110BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Produkt ist nicht verfügbar
RF4E110GNTR RF4E110GNTR Rohm Semiconductor datasheet?p=RF4E110GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.43 EUR
6000+ 0.41 EUR
Mindestbestellmenge: 3000
RQ3E080GNTB RQ3E080GNTB Rohm Semiconductor rq3e080gntb-e Description: MOSFET N-CH 30V 8A 8HSMT
Produkt ist nicht verfügbar
RQ3E100GNTB RQ3E100GNTB Rohm Semiconductor rq3e100gntb-e.pdf Description: MOSFET N-CH 30V 10A 8HSMT
Produkt ist nicht verfügbar
RQ3E120GNTB RQ3E120GNTB Rohm Semiconductor rq3e120gn.pdf Description: MOSFET N-CH 30V 12A 8-HSMT
Produkt ist nicht verfügbar
RQ3E150GNTB RQ3E150GNTB Rohm Semiconductor datasheet?p=RQ3E150GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 15A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.48 EUR
6000+ 0.45 EUR
9000+ 0.42 EUR
Mindestbestellmenge: 3000
RQ3E180GNTB RQ3E180GNTB Rohm Semiconductor datasheet?p=RQ3E180GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 18A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.62 EUR
Mindestbestellmenge: 3000
RS1E130GNTB RS1E130GNTB Rohm Semiconductor datasheet?p=RS1E130GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 13A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
Produkt ist nicht verfügbar
RS1E150GNTB RS1E150GNTB Rohm Semiconductor datasheet?p=RS1E150GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Produkt ist nicht verfügbar
RS1E200GNTB RS1E200GNTB Rohm Semiconductor rs1e200gn-e.pdf Description: MOSFET N-CH 30V 20A 8HSOP
Produkt ist nicht verfügbar
RS1E240GNTB RS1E240GNTB Rohm Semiconductor datasheet?p=RS1E240GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 24A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.85 EUR
5000+ 0.8 EUR
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RS1E320GNTB RS1E320GNTB Rohm Semiconductor rs1e320gntb-e Description: MOSFET N-CH 30V 32A 8HSOP
Produkt ist nicht verfügbar
RF4E070BNTR RF4E070BNTR Rohm Semiconductor datasheet?p=RF4E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
auf Bestellung 780 Stücke:
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500+ 1.24 EUR
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RF4E070GNTR RF4E070GNTR Rohm Semiconductor datasheet?p=RF4E070GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
auf Bestellung 2350 Stücke:
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30+ 0.89 EUR
100+ 0.62 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
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RF4E080BNTR RF4E080BNTR Rohm Semiconductor datasheet?p=RF4E080BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2036 Stücke:
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500+ 0.85 EUR
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RF4E080GNTR RF4E080GNTR Rohm Semiconductor datasheet?p=RF4E080GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
auf Bestellung 782 Stücke:
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500+ 0.51 EUR
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RF4E110BNTR RF4E110BNTR Rohm Semiconductor datasheet?p=RF4E110BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
auf Bestellung 966 Stücke:
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RF4E110GNTR RF4E110GNTR Rohm Semiconductor datasheet?p=RF4E110GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V
auf Bestellung 6586 Stücke:
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21+1.27 EUR
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500+ 0.59 EUR
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RQ3E080GNTB RQ3E080GNTB Rohm Semiconductor rq3e080gntb-e Description: MOSFET N-CH 30V 8A 8HSMT
auf Bestellung 1048 Stücke:
Lieferzeit 21-28 Tag (e)
RQ3E100GNTB RQ3E100GNTB Rohm Semiconductor rq3e100gntb-e.pdf Description: MOSFET N-CH 30V 10A 8HSMT
Produkt ist nicht verfügbar
KDZVTR6.8B kdzv10b.pdf
KDZVTR6.8B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR7.5B kdzvtr7.5b-e.pdf
KDZVTR7.5B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 1W PMDU
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR8.2B kdzvtr8.2b-e.pdf
KDZVTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR9.1B kdzv10b.pdf
KDZVTR9.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.1V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR10B datasheet?p=KDZV10B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTR10B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10.6V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10.6 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
auf Bestellung 12421 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
38+ 0.7 EUR
100+ 0.42 EUR
500+ 0.39 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 29
KDZVTR11B kdzvtr11b-e
KDZVTR11B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 1W PMDU
auf Bestellung 840 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR12B datasheet?p=KDZV12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTR12B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12.75V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12.75 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
auf Bestellung 8397 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
38+ 0.7 EUR
100+ 0.42 EUR
500+ 0.39 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 29
KDZVTR13B kdzvtr13b-e
KDZVTR13B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 1W PMDU
auf Bestellung 6144 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR16B kdzvtr16b-e
KDZVTR16B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR18B datasheet?p=KDZV18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTR18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
auf Bestellung 31622 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
35+ 0.76 EUR
100+ 0.52 EUR
500+ 0.39 EUR
1000+ 0.29 EUR
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KDZVTR20B datasheet?p=KDZV20B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTR20B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 21.2V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 21.2 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 15 V
auf Bestellung 5733 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
38+ 0.7 EUR
100+ 0.42 EUR
500+ 0.39 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 29
KDZVTR22B kdzvtr22b-e.pdf
KDZVTR22B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 23.85V 1W PMDU
auf Bestellung 2058 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR27B kdzvtr27b-e.pdf
KDZVTR27B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 27V 1W PMDU
auf Bestellung 3006 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR3.6B kdzvtr3.6b-e.pdf
KDZVTR3.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.6V 1W PMDU
auf Bestellung 9457 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR3.9B kdzv10b.pdf
KDZVTR3.9B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.9V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR30B datasheet?p=KDZV30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTR30B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 32V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 32 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
auf Bestellung 4795 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
37+ 0.71 EUR
100+ 0.43 EUR
500+ 0.39 EUR
1000+ 0.27 EUR
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KDZVTR33B kdzvtr33b-e.pdf
KDZVTR33B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 33V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR4.3B datasheet?p=KDZV4.3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTR4.3B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.55V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 4.55 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
38+ 0.7 EUR
100+ 0.42 EUR
500+ 0.39 EUR
1000+ 0.26 EUR
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KDZVTR4.7B datasheet?p=KDZV4.7B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTR4.7B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.95V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 4.95 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 11856 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
38+ 0.7 EUR
100+ 0.42 EUR
500+ 0.39 EUR
1000+ 0.26 EUR
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KDZVTR5.1B datasheet?p=KDZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTR5.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.4V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.4 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 8036 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
38+ 0.7 EUR
100+ 0.42 EUR
500+ 0.39 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 29
KDZVTR5.6B kdzvtr5.6b-e.pdf
KDZVTR5.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.95V 1W PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.95 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1.5 V
auf Bestellung 30034 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
35+ 0.76 EUR
100+ 0.52 EUR
500+ 0.39 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 28
KDZVTR6.2B kdzvtr6.2b-e.pdf
KDZVTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 1W PMDU
auf Bestellung 298 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
35+ 0.75 EUR
100+ 0.51 EUR
Mindestbestellmenge: 28
KDZVTR6.8B kdzv10b.pdf
KDZVTR6.8B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 1W PMDU
auf Bestellung 2650 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR7.5B kdzvtr7.5b-e.pdf
KDZVTR7.5B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 1W PMDU
auf Bestellung 8029 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR8.2B kdzvtr8.2b-e.pdf
KDZVTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 8.2V 1W PMDU
auf Bestellung 2745 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR9.1B kdzv10b.pdf
KDZVTR9.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.1V 1W PMDU
auf Bestellung 1524 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR11B kdzvtr11b-e
KDZVTR11B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 1W PMDU
auf Bestellung 840 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR13B kdzvtr13b-e
KDZVTR13B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 1W PMDU
auf Bestellung 6144 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR16B kdzvtr16b-e
KDZVTR16B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 1W PMDU
Produkt ist nicht verfügbar
KDZVTR6.8B kdzv10b.pdf
KDZVTR6.8B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 1W PMDU
auf Bestellung 2650 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR9.1B kdzv10b.pdf
KDZVTR9.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.1V 1W PMDU
auf Bestellung 1524 Stücke:
Lieferzeit 21-28 Tag (e)
KDZVTR11B kdzvtr11b-e
KDZVTR11B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 1W PMDU
Produkt ist nicht verfügbar
BD63715AEFV-E2 bd63715aefv-e.pdf
BD63715AEFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Produkt ist nicht verfügbar
BD63720AEFV-E2 bd63720aefv-e.pdf
BD63720AEFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Produkt ist nicht verfügbar
BD63715AEFV-E2 bd63715aefv-e.pdf
BD63715AEFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
auf Bestellung 2482 Stücke:
Lieferzeit 21-28 Tag (e)
BD63720AEFV-E2 bd63720aefv-e.pdf
BD63720AEFV-E2
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
auf Bestellung 2162 Stücke:
Lieferzeit 21-28 Tag (e)
RF4E070BNTR datasheet?p=RF4E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E070BNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
Produkt ist nicht verfügbar
RF4E070GNTR datasheet?p=RF4E070GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E070GNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Produkt ist nicht verfügbar
RF4E080BNTR datasheet?p=RF4E080BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E080BNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
RF4E080GNTR datasheet?p=RF4E080GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E080GNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Produkt ist nicht verfügbar
RF4E110BNTR datasheet?p=RF4E110BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E110BNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Produkt ist nicht verfügbar
RF4E110GNTR datasheet?p=RF4E110GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E110GNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.43 EUR
6000+ 0.41 EUR
Mindestbestellmenge: 3000
RQ3E080GNTB rq3e080gntb-e
RQ3E080GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A 8HSMT
Produkt ist nicht verfügbar
RQ3E100GNTB rq3e100gntb-e.pdf
RQ3E100GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8HSMT
Produkt ist nicht verfügbar
RQ3E120GNTB rq3e120gn.pdf
RQ3E120GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12A 8-HSMT
Produkt ist nicht verfügbar
RQ3E150GNTB datasheet?p=RQ3E150GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E150GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
6000+ 0.45 EUR
9000+ 0.42 EUR
Mindestbestellmenge: 3000
RQ3E180GNTB datasheet?p=RQ3E180GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E180GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.62 EUR
Mindestbestellmenge: 3000
RS1E130GNTB datasheet?p=RS1E130GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E130GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
Produkt ist nicht verfügbar
RS1E150GNTB datasheet?p=RS1E150GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E150GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Produkt ist nicht verfügbar
RS1E200GNTB rs1e200gn-e.pdf
RS1E200GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 20A 8HSOP
Produkt ist nicht verfügbar
RS1E240GNTB datasheet?p=RS1E240GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E240GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 24A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.85 EUR
5000+ 0.8 EUR
Mindestbestellmenge: 2500
RS1E320GNTB rs1e320gntb-e
RS1E320GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 32A 8HSOP
Produkt ist nicht verfügbar
RF4E070BNTR datasheet?p=RF4E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E070BNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
auf Bestellung 780 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.29 EUR
14+ 1.87 EUR
100+ 1.46 EUR
500+ 1.24 EUR
Mindestbestellmenge: 12
RF4E070GNTR datasheet?p=RF4E070GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E070GNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
auf Bestellung 2350 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
30+ 0.89 EUR
100+ 0.62 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 25
RF4E080BNTR datasheet?p=RF4E080BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E080BNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2036 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.69 EUR
18+ 1.46 EUR
100+ 1.01 EUR
500+ 0.85 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 16
RF4E080GNTR datasheet?p=RF4E080GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E080GNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
auf Bestellung 782 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
28+ 0.93 EUR
100+ 0.65 EUR
500+ 0.51 EUR
Mindestbestellmenge: 24
RF4E110BNTR datasheet?p=RF4E110BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E110BNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
auf Bestellung 966 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.78 EUR
Mindestbestellmenge: 17
RF4E110GNTR datasheet?p=RF4E110GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E110GNTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 15 V
auf Bestellung 6586 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.27 EUR
24+ 1.08 EUR
100+ 0.75 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
RQ3E080GNTB rq3e080gntb-e
RQ3E080GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A 8HSMT
auf Bestellung 1048 Stücke:
Lieferzeit 21-28 Tag (e)
RQ3E100GNTB rq3e100gntb-e.pdf
RQ3E100GNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8HSMT
Produkt ist nicht verfügbar
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