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BSS5130AHZGT116 BSS5130AHZGT116 Rohm Semiconductor datasheet?p=BSS5130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.34 EUR
6000+ 0.32 EUR
Mindestbestellmenge: 3000
BD93W21F-E2 BD93W21F-E2 Rohm Semiconductor bd93w21f-e.pdf Description: BD93W21F IS A USB TYPE-C POWER D
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Function: Controller
Operating Temperature: -30°C ~ 105°C
Voltage - Supply: 4.75V ~ 20V
Current - Supply: 3.2mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-SOP
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BSS4130AHZGT116 BSS4130AHZGT116 Rohm Semiconductor datasheet?p=BSS4130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 5968 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
27+ 0.97 EUR
100+ 0.58 EUR
500+ 0.54 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 21
BSS5130AHZGT116 BSS5130AHZGT116 Rohm Semiconductor datasheet?p=BSS5130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
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100+ 0.58 EUR
500+ 0.54 EUR
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BU21182FS-E2 BU21182FS-E2 Rohm Semiconductor bu21182fs-e.pdf Description: BU21182FS IS A CAPACITIVE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 20
Supplier Device Package: 32-SSOP-A
Proximity Detection: No
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 847 Stücke:
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3+11.78 EUR
10+ 10.58 EUR
25+ 10 EUR
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250+ 8.22 EUR
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BU52271NUZ-ZE2 BU52271NUZ-ZE2 Rohm Semiconductor bu52271nuz-e.pdf Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.5mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
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17+ 1.58 EUR
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50+ 1.31 EUR
100+ 1.11 EUR
500+ 0.97 EUR
1000+ 0.85 EUR
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BD93W21F-E2 BD93W21F-E2 Rohm Semiconductor bd93w21f-e.pdf Description: BD93W21F IS A USB TYPE-C POWER D
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Function: Controller
Operating Temperature: -30°C ~ 105°C
Voltage - Supply: 4.75V ~ 20V
Current - Supply: 3.2mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-SOP
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2494 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.51 EUR
10+ 11.23 EUR
25+ 10.62 EUR
100+ 9.2 EUR
250+ 8.73 EUR
500+ 7.83 EUR
1000+ 6.61 EUR
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BSS63AHZGT116 BSS63AHZGT116 Rohm Semiconductor datasheet?p=BSS63AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Qualification: AEC-Q101
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41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
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BSS64AHZGT116 BSS64AHZGT116 Rohm Semiconductor datasheet?p=BSS64AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BM2P0161K-Z BM2P0161K-Z Rohm Semiconductor bm2p0161k-z-e.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
auf Bestellung 1961 Stücke:
Lieferzeit 21-28 Tag (e)
BM2P0151-Z BM2P0151-Z Rohm Semiconductor datasheet?p=BM2P0151-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG FLYBACK 900UA 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Current - Output: 900µA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 65kHz
Voltage - Input (Max): 26V
Topology: Flyback
Supplier Device Package: 7-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 8.9V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.79 EUR
10+ 6.09 EUR
50+ 5.76 EUR
100+ 4.99 EUR
250+ 4.74 EUR
500+ 4.25 EUR
1000+ 3.58 EUR
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BM2P0362-Z BM2P0362-Z Rohm Semiconductor bm2p0362-z-e.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
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BM2P0163T-Z BM2P0163T-Z Rohm Semiconductor bm2p0163t-z-e.pdf Description: IC OFFLINE SW FLYBACK TO220-7M
auf Bestellung 239 Stücke:
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LDO7V10V15V-SMPLBK LDO7V10V15V-SMPLBK Rohm Semiconductor Description: KIT LDO SGL 7V 10V 15V 8HTSOP J
Produkt ist nicht verfügbar
BD9329AEFJ_EVK BD9329AEFJ_EVK Rohm Semiconductor BD9328EFJ_BD9329AEFJ_EvalBrd_AN.pdf Description: EVAL BOARD FOR BD9329A
Packaging: Bulk
Voltage - Input: 4.2V ~ 18V
Current - Output: 3A
Frequency - Switching: 380kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD9329A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Produkt ist nicht verfügbar
ML9272MBZ03A ML9272MBZ03A Rohm Semiconductor FEDL9272-02.pdf Description: IC VFD DRIVER 40 BIT 60SSOP
Packaging: Tray
Package / Case: 60-BSSOP (0.551", 14.00mm Width)
Display Type: Vacuum Fluorescent (VF)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 60-SSOP
auf Bestellung 942 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.37 EUR
10+ 19.3 EUR
25+ 18.4 EUR
80+ 15.98 EUR
230+ 15.26 EUR
440+ 13.91 EUR
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BD9110NV-E2 BD9110NV-E2 Rohm Semiconductor datasheet?p=BD9110NV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK ADJ 2A SON008V5060
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -25°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SON008V5060
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
RTQ045N03HZGTR RTQ045N03HZGTR Rohm Semiconductor datasheet?p=RTQ045N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2931 Stücke:
Lieferzeit 21-28 Tag (e)
RSQ020N03HZGTR RSQ020N03HZGTR Rohm Semiconductor rsq020n03hzgtr-e.pdf Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RTQ035N03HZGTR RTQ035N03HZGTR Rohm Semiconductor datasheet?p=RTQ035N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.62 EUR
6000+ 0.58 EUR
9000+ 0.54 EUR
Mindestbestellmenge: 3000
RTR025P02HZGTL RTR025P02HZGTL Rohm Semiconductor datasheet?p=RTR025P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.69 EUR
6000+ 0.66 EUR
9000+ 0.61 EUR
Mindestbestellmenge: 3000
RTR030P02HZGTL RTR030P02HZGTL Rohm Semiconductor datasheet?p=RTR030P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RSR020N06HZGTL RSR020N06HZGTL Rohm Semiconductor rsr020n06hzgtl-e.pdf Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.52 EUR
Mindestbestellmenge: 3000
RSQ035N06HZGTR RSQ035N06HZGTR Rohm Semiconductor rsq035n06hzgtr-e.pdf Description: MOSFET N-CH 60V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.69 EUR
Mindestbestellmenge: 3000
RSR030N06HZGTL RSR030N06HZGTL Rohm Semiconductor rsr030n06hzgtl-e.pdf Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.67 EUR
6000+ 0.64 EUR
9000+ 0.59 EUR
Mindestbestellmenge: 3000
RTR030N05HZGTL RTR030N05HZGTL Rohm Semiconductor datasheet?p=RTR030N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.72 EUR
6000+ 0.69 EUR
9000+ 0.63 EUR
Mindestbestellmenge: 3000
RTR025N03HZGTL RTR025N03HZGTL Rohm Semiconductor datasheet?p=RTR025N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 16281 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.5 EUR
6000+ 0.48 EUR
9000+ 0.44 EUR
Mindestbestellmenge: 3000
RTR020P02HZGTL RTR020P02HZGTL Rohm Semiconductor datasheet?p=RTR020P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.68 EUR
6000+ 0.64 EUR
9000+ 0.6 EUR
Mindestbestellmenge: 3000
RUR040N02HZGTL RUR040N02HZGTL Rohm Semiconductor datasheet?p=RUR040N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.69 EUR
Mindestbestellmenge: 3000
RTR025N05HZGTL RTR025N05HZGTL Rohm Semiconductor datasheet?p=RTR025N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+0.53 EUR
6000+ 0.5 EUR
Mindestbestellmenge: 3000
RTR020N05HZGTL RTR020N05HZGTL Rohm Semiconductor datasheet?p=RTR020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.53 EUR
Mindestbestellmenge: 3000
RTQ020N05HZGTR RTQ020N05HZGTR Rohm Semiconductor datasheet?p=RTQ020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RSR010N10HZGTL RSR010N10HZGTL Rohm Semiconductor rsr010n10hzgtl-e.pdf Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.63 EUR
Mindestbestellmenge: 3000
RSQ015N06HZGTR RSQ015N06HZGTR Rohm Semiconductor rsq015n06hzgtr-e.pdf Description: MOSFET N-CH 60V 1.5A TSMT6
Produkt ist nicht verfügbar
RTQ035P02HZGTR RTQ035P02HZGTR Rohm Semiconductor datasheet?p=RTQ035P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RSQ045N03HZGTR RSQ045N03HZGTR Rohm Semiconductor rsq045n03hzgtr-e.pdf Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RSR025N03HZGTL RSR025N03HZGTL Rohm Semiconductor rsr025n03hzgtl-e.pdf Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RTR040N03HZGTL RTR040N03HZGTL Rohm Semiconductor datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
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Lieferzeit 21-28 Tag (e)
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 3000
RSQ035N06HZGTR RSQ035N06HZGTR Rohm Semiconductor rsq035n06hzgtr-e.pdf Description: MOSFET N-CH 60V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8737 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.82 EUR
17+ 1.58 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
RTR030N05HZGTL RTR030N05HZGTL Rohm Semiconductor datasheet?p=RTR030N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 11932 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.9 EUR
16+ 1.65 EUR
100+ 1.14 EUR
500+ 0.95 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 14
RTQ045N03HZGTR RTQ045N03HZGTR Rohm Semiconductor datasheet?p=RTQ045N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2931 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.72 EUR
18+ 1.49 EUR
100+ 1.03 EUR
500+ 0.86 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 16
RSR010N10HZGTL RSR010N10HZGTL Rohm Semiconductor rsr010n10hzgtl-e.pdf Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6013 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.66 EUR
19+ 1.43 EUR
100+ 0.99 EUR
500+ 0.83 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 16
RSQ020N03HZGTR RSQ020N03HZGTR Rohm Semiconductor rsq020n03hzgtr-e.pdf Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1190 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
20+ 1.33 EUR
100+ 0.93 EUR
500+ 0.72 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 17
RUR040N02HZGTL RUR040N02HZGTL Rohm Semiconductor datasheet?p=RUR040N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5886 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.79 EUR
17+ 1.57 EUR
100+ 1.08 EUR
500+ 0.9 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 15
RTR020P02HZGTL RTR020P02HZGTL Rohm Semiconductor datasheet?p=RTR020P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 14524 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.79 EUR
17+ 1.55 EUR
100+ 1.07 EUR
500+ 0.9 EUR
1000+ 0.76 EUR
Mindestbestellmenge: 15
RTQ035N03HZGTR RTQ035N03HZGTR Rohm Semiconductor datasheet?p=RTQ035N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9800 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.61 EUR
19+ 1.4 EUR
100+ 0.97 EUR
500+ 0.81 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 17
RTR025N05HZGTL RTR025N05HZGTL Rohm Semiconductor datasheet?p=RTR025N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6264 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
20+ 1.34 EUR
100+ 0.93 EUR
500+ 0.73 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 17
RTR025P02HZGTL RTR025P02HZGTL Rohm Semiconductor datasheet?p=RTR025P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 10400 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.82 EUR
17+ 1.58 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
RTR025N03HZGTL RTR025N03HZGTL Rohm Semiconductor datasheet?p=RTR025N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 20319 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.48 EUR
21+ 1.28 EUR
100+ 0.89 EUR
500+ 0.69 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
RTR020N05HZGTL RTR020N05HZGTL Rohm Semiconductor datasheet?p=RTR020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5933 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
20+ 1.33 EUR
100+ 0.93 EUR
500+ 0.72 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 17
RTR030P02HZGTL RTR030P02HZGTL Rohm Semiconductor datasheet?p=RTR030P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2159 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.08 EUR
15+ 1.8 EUR
100+ 1.25 EUR
500+ 1.04 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
RSQ045N03HZGTR RSQ045N03HZGTR Rohm Semiconductor rsq045n03hzgtr-e.pdf Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 14 Stücke:
Lieferzeit 21-28 Tag (e)
RSR030N06HZGTL RSR030N06HZGTL Rohm Semiconductor rsr030n06hzgtl-e.pdf Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 14137 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.77 EUR
17+ 1.54 EUR
100+ 1.06 EUR
500+ 0.89 EUR
1000+ 0.76 EUR
Mindestbestellmenge: 15
RSQ015N06HZGTR RSQ015N06HZGTR Rohm Semiconductor rsq015n06hzgtr-e.pdf Description: MOSFET N-CH 60V 1.5A TSMT6
auf Bestellung 2959 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.61 EUR
19+ 1.38 EUR
100+ 1.03 EUR
500+ 0.81 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 17
RTQ035P02HZGTR RTQ035P02HZGTR Rohm Semiconductor datasheet?p=RTQ035P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2591 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.11 EUR
15+ 1.84 EUR
100+ 1.27 EUR
500+ 1.06 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 13
RTR040N03HZGTL RTR040N03HZGTL Rohm Semiconductor datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14764 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
20+ 1.36 EUR
100+ 0.94 EUR
500+ 0.78 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
RSR020N06HZGTL RSR020N06HZGTL Rohm Semiconductor rsr020n06hzgtl-e.pdf Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7953 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.38 EUR
23+ 1.18 EUR
100+ 0.82 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 19
RTQ020N05HZGTR RTQ020N05HZGTR Rohm Semiconductor datasheet?p=RTQ020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 981 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
20+ 1.33 EUR
100+ 0.93 EUR
500+ 0.72 EUR
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LB-602EA2 LB-602EA2 Rohm Semiconductor datasheet?p=LB-602EA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DISPLAY 7SEG 0.56" DBL ORG 18DIP
Packaging: Bulk
Package / Case: 18-DIP (0.600", 15.24mm)
Color: Orange
Display Type: 7-Segment
Size / Dimension: 0.748" H x 0.984" W x 0.315" D (19.00mm x 25.00mm x 8.00mm)
Number of Characters: 2
Millicandela Rating: 90mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.56" (14.30mm)
Voltage - Forward (Vf) (Typ): 2.05V
Current - Test: 25mA
Wavelength - Peak: 610nm
Power Dissipation (Max): 65mW
auf Bestellung 242 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.35 EUR
10+ 15.48 EUR
Mindestbestellmenge: 2
BC847BU3T106 BC847BU3T106 Rohm Semiconductor datasheet?p=BC847BU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 45V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
BSS5130AHZGT116 datasheet?p=BSS5130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS5130AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
6000+ 0.32 EUR
Mindestbestellmenge: 3000
BD93W21F-E2 bd93w21f-e.pdf
BD93W21F-E2
Hersteller: Rohm Semiconductor
Description: BD93W21F IS A USB TYPE-C POWER D
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Function: Controller
Operating Temperature: -30°C ~ 105°C
Voltage - Supply: 4.75V ~ 20V
Current - Supply: 3.2mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-SOP
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BSS4130AHZGT116 datasheet?p=BSS4130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS4130AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 5968 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
27+ 0.97 EUR
100+ 0.58 EUR
500+ 0.54 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 21
BSS5130AHZGT116 datasheet?p=BSS5130AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS5130AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
27+ 0.97 EUR
100+ 0.58 EUR
500+ 0.54 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 21
BU21182FS-E2 bu21182fs-e.pdf
BU21182FS-E2
Hersteller: Rohm Semiconductor
Description: BU21182FS IS A CAPACITIVE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Number of Inputs: 20
Supplier Device Package: 32-SSOP-A
Proximity Detection: No
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 847 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.78 EUR
10+ 10.58 EUR
25+ 10 EUR
100+ 8.67 EUR
250+ 8.22 EUR
500+ 7.38 EUR
Mindestbestellmenge: 3
BU52271NUZ-ZE2 bu52271nuz-e.pdf
BU52271NUZ-ZE2
Hersteller: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.5mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
auf Bestellung 29804 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
17+ 1.58 EUR
25+ 1.36 EUR
50+ 1.31 EUR
100+ 1.11 EUR
500+ 0.97 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 13
BD93W21F-E2 bd93w21f-e.pdf
BD93W21F-E2
Hersteller: Rohm Semiconductor
Description: BD93W21F IS A USB TYPE-C POWER D
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Function: Controller
Operating Temperature: -30°C ~ 105°C
Voltage - Supply: 4.75V ~ 20V
Current - Supply: 3.2mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-SOP
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2494 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.51 EUR
10+ 11.23 EUR
25+ 10.62 EUR
100+ 9.2 EUR
250+ 8.73 EUR
500+ 7.83 EUR
1000+ 6.61 EUR
Mindestbestellmenge: 3
BSS63AHZGT116 datasheet?p=BSS63AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS63AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PNP 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 2889 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
BSS64AHZGT116 datasheet?p=BSS64AHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSS64AHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS NPN 100V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BM2P0161K-Z bm2p0161k-z-e.pdf
BM2P0161K-Z
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 7DIP
auf Bestellung 1961 Stücke:
Lieferzeit 21-28 Tag (e)
BM2P0151-Z datasheet?p=BM2P0151-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2P0151-Z
Hersteller: Rohm Semiconductor
Description: IC REG FLYBACK 900UA 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Current - Output: 900µA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 65kHz
Voltage - Input (Max): 26V
Topology: Flyback
Supplier Device Package: 7-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 8.9V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.79 EUR
10+ 6.09 EUR
50+ 5.76 EUR
100+ 4.99 EUR
250+ 4.74 EUR
500+ 4.25 EUR
1000+ 3.58 EUR
Mindestbestellmenge: 4
BM2P0362-Z bm2p0362-z-e.pdf
BM2P0362-Z
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 7DIP
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
BM2P0163T-Z bm2p0163t-z-e.pdf
BM2P0163T-Z
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO220-7M
auf Bestellung 239 Stücke:
Lieferzeit 21-28 Tag (e)
LDO7V10V15V-SMPLBK
LDO7V10V15V-SMPLBK
Hersteller: Rohm Semiconductor
Description: KIT LDO SGL 7V 10V 15V 8HTSOP J
Produkt ist nicht verfügbar
BD9329AEFJ_EVK BD9328EFJ_BD9329AEFJ_EvalBrd_AN.pdf
BD9329AEFJ_EVK
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD9329A
Packaging: Bulk
Voltage - Input: 4.2V ~ 18V
Current - Output: 3A
Frequency - Switching: 380kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD9329A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Produkt ist nicht verfügbar
ML9272MBZ03A FEDL9272-02.pdf
ML9272MBZ03A
Hersteller: Rohm Semiconductor
Description: IC VFD DRIVER 40 BIT 60SSOP
Packaging: Tray
Package / Case: 60-BSSOP (0.551", 14.00mm Width)
Display Type: Vacuum Fluorescent (VF)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Supplier Device Package: 60-SSOP
auf Bestellung 942 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+21.37 EUR
10+ 19.3 EUR
25+ 18.4 EUR
80+ 15.98 EUR
230+ 15.26 EUR
440+ 13.91 EUR
Mindestbestellmenge: 2
BD9110NV-E2 datasheet?p=BD9110NV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9110NV-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 2A SON008V5060
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -25°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SON008V5060
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
RTQ045N03HZGTR datasheet?p=RTQ045N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ045N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2931 Stücke:
Lieferzeit 21-28 Tag (e)
RSQ020N03HZGTR rsq020n03hzgtr-e.pdf
RSQ020N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RTQ035N03HZGTR datasheet?p=RTQ035N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ035N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.62 EUR
6000+ 0.58 EUR
9000+ 0.54 EUR
Mindestbestellmenge: 3000
RTR025P02HZGTL datasheet?p=RTR025P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.69 EUR
6000+ 0.66 EUR
9000+ 0.61 EUR
Mindestbestellmenge: 3000
RTR030P02HZGTL datasheet?p=RTR030P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR030P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RSR020N06HZGTL rsr020n06hzgtl-e.pdf
RSR020N06HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.52 EUR
Mindestbestellmenge: 3000
RSQ035N06HZGTR rsq035n06hzgtr-e.pdf
RSQ035N06HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.69 EUR
Mindestbestellmenge: 3000
RSR030N06HZGTL rsr030n06hzgtl-e.pdf
RSR030N06HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.67 EUR
6000+ 0.64 EUR
9000+ 0.59 EUR
Mindestbestellmenge: 3000
RTR030N05HZGTL datasheet?p=RTR030N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR030N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.72 EUR
6000+ 0.69 EUR
9000+ 0.63 EUR
Mindestbestellmenge: 3000
RTR025N03HZGTL datasheet?p=RTR025N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 16281 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.5 EUR
6000+ 0.48 EUR
9000+ 0.44 EUR
Mindestbestellmenge: 3000
RTR020P02HZGTL datasheet?p=RTR020P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR020P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.68 EUR
6000+ 0.64 EUR
9000+ 0.6 EUR
Mindestbestellmenge: 3000
RUR040N02HZGTL datasheet?p=RUR040N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUR040N02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.69 EUR
Mindestbestellmenge: 3000
RTR025N05HZGTL datasheet?p=RTR025N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.53 EUR
6000+ 0.5 EUR
Mindestbestellmenge: 3000
RTR020N05HZGTL datasheet?p=RTR020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR020N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.53 EUR
Mindestbestellmenge: 3000
RTQ020N05HZGTR datasheet?p=RTQ020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ020N05HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RSR010N10HZGTL rsr010n10hzgtl-e.pdf
RSR010N10HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.63 EUR
Mindestbestellmenge: 3000
RSQ015N06HZGTR rsq015n06hzgtr-e.pdf
RSQ015N06HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TSMT6
Produkt ist nicht verfügbar
RTQ035P02HZGTR datasheet?p=RTQ035P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ035P02HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RSQ045N03HZGTR rsq045n03hzgtr-e.pdf
RSQ045N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RSR025N03HZGTL rsr025n03hzgtl-e.pdf
RSR025N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RTR040N03HZGTL datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR040N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 3000
RSQ035N06HZGTR rsq035n06hzgtr-e.pdf
RSQ035N06HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8737 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.82 EUR
17+ 1.58 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
RTR030N05HZGTL datasheet?p=RTR030N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR030N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 11932 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.9 EUR
16+ 1.65 EUR
100+ 1.14 EUR
500+ 0.95 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 14
RTQ045N03HZGTR datasheet?p=RTQ045N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ045N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2931 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.49 EUR
100+ 1.03 EUR
500+ 0.86 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 16
RSR010N10HZGTL rsr010n10hzgtl-e.pdf
RSR010N10HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6013 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.66 EUR
19+ 1.43 EUR
100+ 0.99 EUR
500+ 0.83 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 16
RSQ020N03HZGTR rsq020n03hzgtr-e.pdf
RSQ020N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1190 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.33 EUR
100+ 0.93 EUR
500+ 0.72 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 17
RUR040N02HZGTL datasheet?p=RUR040N02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUR040N02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5886 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.79 EUR
17+ 1.57 EUR
100+ 1.08 EUR
500+ 0.9 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 15
RTR020P02HZGTL datasheet?p=RTR020P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR020P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 14524 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.79 EUR
17+ 1.55 EUR
100+ 1.07 EUR
500+ 0.9 EUR
1000+ 0.76 EUR
Mindestbestellmenge: 15
RTQ035N03HZGTR datasheet?p=RTQ035N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ035N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.61 EUR
19+ 1.4 EUR
100+ 0.97 EUR
500+ 0.81 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 17
RTR025N05HZGTL datasheet?p=RTR025N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6264 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.34 EUR
100+ 0.93 EUR
500+ 0.73 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 17
RTR025P02HZGTL datasheet?p=RTR025P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 10400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.82 EUR
17+ 1.58 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
RTR025N03HZGTL datasheet?p=RTR025N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR025N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 20319 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.48 EUR
21+ 1.28 EUR
100+ 0.89 EUR
500+ 0.69 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
RTR020N05HZGTL datasheet?p=RTR020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR020N05HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5933 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.33 EUR
100+ 0.93 EUR
500+ 0.72 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 17
RTR030P02HZGTL datasheet?p=RTR030P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR030P02HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2159 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.8 EUR
100+ 1.25 EUR
500+ 1.04 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
RSQ045N03HZGTR rsq045n03hzgtr-e.pdf
RSQ045N03HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 14 Stücke:
Lieferzeit 21-28 Tag (e)
RSR030N06HZGTL rsr030n06hzgtl-e.pdf
RSR030N06HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 14137 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.77 EUR
17+ 1.54 EUR
100+ 1.06 EUR
500+ 0.89 EUR
1000+ 0.76 EUR
Mindestbestellmenge: 15
RSQ015N06HZGTR rsq015n06hzgtr-e.pdf
RSQ015N06HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TSMT6
auf Bestellung 2959 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.61 EUR
19+ 1.38 EUR
100+ 1.03 EUR
500+ 0.81 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 17
RTQ035P02HZGTR datasheet?p=RTQ035P02HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ035P02HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2591 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.11 EUR
15+ 1.84 EUR
100+ 1.27 EUR
500+ 1.06 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 13
RTR040N03HZGTL datasheet?p=RTR040N03HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR040N03HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14764 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.36 EUR
100+ 0.94 EUR
500+ 0.78 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
RSR020N06HZGTL rsr020n06hzgtl-e.pdf
RSR020N06HZGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7953 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
23+ 1.18 EUR
100+ 0.82 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 19
RTQ020N05HZGTR datasheet?p=RTQ020N05HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTQ020N05HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 981 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.33 EUR
100+ 0.93 EUR
500+ 0.72 EUR
Mindestbestellmenge: 17
LB-602EA2 datasheet?p=LB-602EA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LB-602EA2
Hersteller: Rohm Semiconductor
Description: DISPLAY 7SEG 0.56" DBL ORG 18DIP
Packaging: Bulk
Package / Case: 18-DIP (0.600", 15.24mm)
Color: Orange
Display Type: 7-Segment
Size / Dimension: 0.748" H x 0.984" W x 0.315" D (19.00mm x 25.00mm x 8.00mm)
Number of Characters: 2
Millicandela Rating: 90mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.56" (14.30mm)
Voltage - Forward (Vf) (Typ): 2.05V
Current - Test: 25mA
Wavelength - Peak: 610nm
Power Dissipation (Max): 65mW
auf Bestellung 242 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+21.35 EUR
10+ 15.48 EUR
Mindestbestellmenge: 2
BC847BU3T106 datasheet?p=BC847BU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BC847BU3T106
Hersteller: Rohm Semiconductor
Description: TRANS NPN 45V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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