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BM64378S-VA BM64378S-VA Rohm Semiconductor Description: 600V IGBT INTELLIGENT POWER MODU
auf Bestellung 28 Stücke:
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10+48.04 EUR
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ESR18EZPJ184 ESR18EZPJ184 Rohm Semiconductor esr-e.pdf Description: RES 180K OHM 5% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 180 kOhms
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130+0.14 EUR
165+0.11 EUR
196+0.09 EUR
233+0.076 EUR
273+0.065 EUR
500+0.057 EUR
1000+0.051 EUR
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BA2903YFV-MGE2 BA2903YFV-MGE2 Rohm Semiconductor datasheet?p=BA2903YFV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SSOP-B
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
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22+0.8 EUR
25+0.72 EUR
100+0.63 EUR
250+0.59 EUR
500+0.56 EUR
1000+0.54 EUR
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BZX84B12VLYT116 BZX84B12VLYT116 Rohm Semiconductor datasheet?p=BZX84B12VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZX84B12VLYT116 BZX84B12VLYT116 Rohm Semiconductor datasheet?p=BZX84B12VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 3041 Stücke:
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54+0.33 EUR
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500+0.15 EUR
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BZX84B12VLYFHT116 BZX84B12VLYFHT116 Rohm Semiconductor datasheet?p=BZX84B12VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B12VLYFHT116 BZX84B12VLYFHT116 Rohm Semiconductor datasheet?p=BZX84B12VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 488 Stücke:
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56+0.32 EUR
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YFZVFHTR10B YFZVFHTR10B Rohm Semiconductor yfzvfhtr10b-e.pdf Description: DIODE ZENER 9.66V 500MW TUMD2M
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YFZVFHTR10B YFZVFHTR10B Rohm Semiconductor yfzvfhtr10b-e.pdf Description: DIODE ZENER 9.66V 500MW TUMD2M
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YFZVFHTR15B YFZVFHTR15B Rohm Semiconductor yfzvfhtr15b-e.pdf Description: DIODE ZENER 14.26V 500MW TUMD2M
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YFZVFHTR15B YFZVFHTR15B Rohm Semiconductor yfzvfhtr15b-e.pdf Description: DIODE ZENER 14.26V 500MW TUMD2M
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RB508FM-40FHT106 RB508FM-40FHT106 Rohm Semiconductor datasheet?p=RB508FM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: DIODE SCHOTTKY 40V 80MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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RB508FM-40FHT106 RB508FM-40FHT106 Rohm Semiconductor datasheet?p=RB508FM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: DIODE SCHOTTKY 40V 80MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5077 Stücke:
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60+0.3 EUR
140+0.13 EUR
Mindestbestellmenge: 36
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BD9151MUV-E2 BD9151MUV-E2 Rohm Semiconductor datasheet?p=BD9151MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK 1.2V/1.8V DL 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN020V4040
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Part Status: Active
Produkt ist nicht verfügbar
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BM2P151X-Z BM2P151X-Z Rohm Semiconductor bm2pxx1x-z-e.pdf Description: IC OFFLINE SW FULL-BRIDGE 7DIP
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DTA123ECAHZGT116 DTA123ECAHZGT116 Rohm Semiconductor datasheet?p=DTA123ECAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA123ECAHZGT116 DTA123ECAHZGT116 Rohm Semiconductor datasheet?p=DTA123ECAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2980 Stücke:
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42+0.42 EUR
68+0.26 EUR
109+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 42
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DTA123YEFRATL DTA123YEFRATL Rohm Semiconductor datasheet?p=DTA123YEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTA123YEFRATL DTA123YEFRATL Rohm Semiconductor datasheet?p=DTA123YEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 969 Stücke:
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33+0.55 EUR
100+0.29 EUR
500+0.19 EUR
Mindestbestellmenge: 27
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DTA123YUAT106 DTA123YUAT106 Rohm Semiconductor dta123yetl-e.pdf Description: TRANS PREBIAS PNP 200MW UMT3
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DTA123YUAT106 DTA123YUAT106 Rohm Semiconductor dta123yetl-e.pdf Description: TRANS PREBIAS PNP 200MW UMT3
auf Bestellung 2965 Stücke:
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DTA123YCAHZGT116 DTA123YCAHZGT116 Rohm Semiconductor datasheet?p=DTA123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP -100MA -50V DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTA123YCAHZGT116 DTA123YCAHZGT116 Rohm Semiconductor datasheet?p=DTA123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP -100MA -50V DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1595 Stücke:
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48+0.37 EUR
53+0.33 EUR
100+0.18 EUR
500+0.11 EUR
1000+0.076 EUR
Mindestbestellmenge: 48
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DTA123YEBTL DTA123YEBTL Rohm Semiconductor datasheet?p=DTA123YEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTA123YEBTL DTA123YEBTL Rohm Semiconductor datasheet?p=DTA123YEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2800 Stücke:
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44+0.4 EUR
63+0.28 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.079 EUR
Mindestbestellmenge: 44
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DTA123YCAT116 DTA123YCAT116 Rohm Semiconductor datasheet?p=DTA123YCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA123YCAT116 DTA123YCAT116 Rohm Semiconductor datasheet?p=DTA123YCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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50+0.35 EUR
82+0.21 EUR
133+0.13 EUR
500+0.097 EUR
1000+0.086 EUR
Mindestbestellmenge: 50
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BU7465HFV-TR BU7465HFV-TR Rohm Semiconductor Description: IC OPAMP GP 1 CIRCUIT HVSOF5
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BU7465SHFV-TR BU7465SHFV-TR Rohm Semiconductor Description: IC OPAMP GP 1 CIRCUIT HVSOF5
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RBR40NS60ATL RBR40NS60ATL Rohm Semiconductor datasheet?p=RBR40NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
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RBR40NS60ATL RBR40NS60ATL Rohm Semiconductor datasheet?p=RBR40NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
auf Bestellung 960 Stücke:
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RBR40NS30ATL RBR40NS30ATL Rohm Semiconductor datasheet?p=RBR40NS30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 20 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
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RBR40NS30ATL RBR40NS30ATL Rohm Semiconductor datasheet?p=RBR40NS30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 20 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
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SMF8V0TR SMF8V0TR Rohm Semiconductor smf8v0tr-e.pdf Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TR SMF8V0TR Rohm Semiconductor smf8v0tr-e.pdf Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TFTR SMF8V0TFTR Rohm Semiconductor datasheet?p=SMF8V0TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TFTR SMF8V0TFTR Rohm Semiconductor datasheet?p=SMF8V0TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 8VWM 13.6VC PMDU
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RSQ015P10HZGTR RSQ015P10HZGTR Rohm Semiconductor rsq015p10hzgtr-e.pdf Description: MOSFET P-CH 100V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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RSQ015P10HZGTR RSQ015P10HZGTR Rohm Semiconductor rsq015p10hzgtr-e.pdf Description: MOSFET P-CH 100V 1.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BM2SC122FP2-LBZE2 BM2SC122FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC122FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
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BM2SC122FP2-LBZE2 BM2SC122FP2-LBZE2 Rohm Semiconductor datasheet?p=BM2SC122FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
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BR24L16FVJ-WE2 BR24L16FVJ-WE2 Rohm Semiconductor datasheet?p=BR24L16FVJ-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-BJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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PDZVTFTR30B PDZVTFTR30B Rohm Semiconductor datasheet?p=PDZVTF30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 32V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 32 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
Qualification: AEC-Q101
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PDZVTFTR30B PDZVTFTR30B Rohm Semiconductor datasheet?p=PDZVTF30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 32V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.67%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 32 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
Qualification: AEC-Q101
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KDZVTFTR30B KDZVTFTR30B Rohm Semiconductor kdzvtftr30b-e.pdf Description: DIODE ZENER 30V 1W PMDU
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KDZVTFTR30B KDZVTFTR30B Rohm Semiconductor kdzvtftr30b-e.pdf Description: DIODE ZENER 30V 1W PMDU
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KDZVTFTR4.3B KDZVTFTR4.3B Rohm Semiconductor datasheet?p=KDZVTF4.3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 4.3V 1W PMDU
Packaging: Tape & Reel (TR)
Tolerance: ±5.81%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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KDZVTFTR4.3B KDZVTFTR4.3B Rohm Semiconductor datasheet?p=KDZVTF4.3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 4.3V 1W PMDU
Packaging: Cut Tape (CT)
Tolerance: ±5.81%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 3993 Stücke:
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RB751CS-40FHT2RA RB751CS-40FHT2RA Rohm Semiconductor datasheet?p=RB751CS-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 30MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
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RB751CS-40FHT2RA RB751CS-40FHT2RA Rohm Semiconductor datasheet?p=RB751CS-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 30MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
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RBR1MM60ATFTR RBR1MM60ATFTR Rohm Semiconductor datasheet?p=RBR1MM60ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Qualification: AEC-Q101
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RBR1MM60ATFTR RBR1MM60ATFTR Rohm Semiconductor datasheet?p=RBR1MM60ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Qualification: AEC-Q101
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RBR3MM40ATFTR RBR3MM40ATFTR Rohm Semiconductor datasheet?p=RBR3MM40ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 3A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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RBR3MM40ATFTR RBR3MM40ATFTR Rohm Semiconductor datasheet?p=RBR3MM40ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 3A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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RBR2MM40CTFTR RBR2MM40CTFTR Rohm Semiconductor rbr2mm40ctftr-e.pdf Description: DIODE (RECTIFIER FRD) 40V-VR 2A-
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RBR2MM40CTFTR RBR2MM40CTFTR Rohm Semiconductor rbr2mm40ctftr-e.pdf Description: DIODE (RECTIFIER FRD) 40V-VR 2A-
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RBR3MM30ATFTR RBR3MM30ATFTR Rohm Semiconductor datasheet?p=RBR3MM30ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 3A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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RBR3MM30ATFTR RBR3MM30ATFTR Rohm Semiconductor datasheet?p=RBR3MM30ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 3A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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RB541SM-40FHT2R RB541SM-40FHT2R Rohm Semiconductor rb541sm-40fht2r-e Description: RB541SM-40FH IS THE HIGH RELIABI
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RB541SM-40FHT2R RB541SM-40FHT2R Rohm Semiconductor rb541sm-40fht2r-e Description: RB541SM-40FH IS THE HIGH RELIABI
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BM64378S-VA
BM64378S-VA
Hersteller: Rohm Semiconductor
Description: 600V IGBT INTELLIGENT POWER MODU
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1+52.08 EUR
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ESR18EZPJ184 esr-e.pdf
ESR18EZPJ184
Hersteller: Rohm Semiconductor
Description: RES 180K OHM 5% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 180 kOhms
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67+0.26 EUR
130+0.14 EUR
165+0.11 EUR
196+0.09 EUR
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500+0.057 EUR
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BA2903YFV-MGE2 datasheet?p=BA2903YFV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA2903YFV-MGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SSOP-B
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
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16+1.13 EUR
22+0.8 EUR
25+0.72 EUR
100+0.63 EUR
250+0.59 EUR
500+0.56 EUR
1000+0.54 EUR
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BZX84B12VLYT116 datasheet?p=BZX84B12VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B12VLYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.13 EUR
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BZX84B12VLYT116 datasheet?p=BZX84B12VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B12VLYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 3041 Stücke:
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Anzahl Preis
34+0.53 EUR
54+0.33 EUR
100+0.19 EUR
500+0.15 EUR
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BZX84B12VLYFHT116 datasheet?p=BZX84B12VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B12VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B12VLYFHT116 datasheet?p=BZX84B12VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B12VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 488 Stücke:
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Anzahl Preis
39+0.46 EUR
56+0.32 EUR
102+0.17 EUR
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YFZVFHTR10B yfzvfhtr10b-e.pdf
YFZVFHTR10B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.66V 500MW TUMD2M
Produkt ist nicht verfügbar
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YFZVFHTR10B yfzvfhtr10b-e.pdf
YFZVFHTR10B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.66V 500MW TUMD2M
auf Bestellung 2475 Stücke:
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YFZVFHTR15B yfzvfhtr15b-e.pdf
YFZVFHTR15B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 14.26V 500MW TUMD2M
Produkt ist nicht verfügbar
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YFZVFHTR15B yfzvfhtr15b-e.pdf
YFZVFHTR15B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 14.26V 500MW TUMD2M
auf Bestellung 1342 Stücke:
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RB508FM-40FHT106 datasheet?p=RB508FM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB508FM-40FHT106
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 80MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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RB508FM-40FHT106 datasheet?p=RB508FM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB508FM-40FHT106
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 80MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5077 Stücke:
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Anzahl Preis
36+0.49 EUR
60+0.3 EUR
140+0.13 EUR
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BD9151MUV-E2 datasheet?p=BD9151MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9151MUV-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK 1.2V/1.8V DL 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN020V4040
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Part Status: Active
Produkt ist nicht verfügbar
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BM2P151X-Z bm2pxx1x-z-e.pdf
BM2P151X-Z
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 7DIP
auf Bestellung 962 Stücke:
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DTA123ECAHZGT116 datasheet?p=DTA123ECAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123ECAHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA123ECAHZGT116 datasheet?p=DTA123ECAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123ECAHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
68+0.26 EUR
109+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 42
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DTA123YEFRATL datasheet?p=DTA123YEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YEFRATL
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTA123YEFRATL datasheet?p=DTA123YEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YEFRATL
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
33+0.55 EUR
100+0.29 EUR
500+0.19 EUR
Mindestbestellmenge: 27
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DTA123YUAT106 dta123yetl-e.pdf
DTA123YUAT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW UMT3
Produkt ist nicht verfügbar
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DTA123YUAT106 dta123yetl-e.pdf
DTA123YUAT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW UMT3
auf Bestellung 2965 Stücke:
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DTA123YCAHZGT116 datasheet?p=DTA123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YCAHZGT116
Hersteller: Rohm Semiconductor
Description: PNP -100MA -50V DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTA123YCAHZGT116 datasheet?p=DTA123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YCAHZGT116
Hersteller: Rohm Semiconductor
Description: PNP -100MA -50V DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
53+0.33 EUR
100+0.18 EUR
500+0.11 EUR
1000+0.076 EUR
Mindestbestellmenge: 48
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DTA123YEBTL datasheet?p=DTA123YEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTA123YEBTL datasheet?p=DTA123YEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
63+0.28 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.079 EUR
Mindestbestellmenge: 44
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DTA123YCAT116 datasheet?p=DTA123YCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA123YCAT116 datasheet?p=DTA123YCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 1414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
82+0.21 EUR
133+0.13 EUR
500+0.097 EUR
1000+0.086 EUR
Mindestbestellmenge: 50
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BU7465HFV-TR
BU7465HFV-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1 CIRCUIT HVSOF5
Produkt ist nicht verfügbar
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BU7465SHFV-TR
BU7465SHFV-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1 CIRCUIT HVSOF5
Produkt ist nicht verfügbar
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RBR40NS60ATL datasheet?p=RBR40NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR40NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Produkt ist nicht verfügbar
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RBR40NS60ATL datasheet?p=RBR40NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR40NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.79 EUR
100+2.22 EUR
500+1.88 EUR
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RBR40NS30ATL datasheet?p=RBR40NS30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR40NS30ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 20 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Produkt ist nicht verfügbar
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RBR40NS30ATL datasheet?p=RBR40NS30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR40NS30ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPTS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 20 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
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10+3.82 EUR
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SMF8V0TR smf8v0tr-e.pdf
SMF8V0TR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TR smf8v0tr-e.pdf
SMF8V0TR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TFTR datasheet?p=SMF8V0TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF8V0TFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TFTR datasheet?p=SMF8V0TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF8V0TFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8VWM 13.6VC PMDU
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RSQ015P10HZGTR rsq015p10hzgtr-e.pdf
RSQ015P10HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.45 EUR
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RSQ015P10HZGTR rsq015p10hzgtr-e.pdf
RSQ015P10HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17270 Stücke:
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15+1.21 EUR
100+0.81 EUR
500+0.63 EUR
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BM2SC122FP2-LBZE2 datasheet?p=BM2SC122FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC122FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
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BM2SC122FP2-LBZE2 datasheet?p=BM2SC122FP2-LBZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM2SC122FP2-LBZE2
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
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Anzahl Preis
1+23.64 EUR
10+16.4 EUR
25+14.52 EUR
100+12.38 EUR
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BR24L16FVJ-WE2 datasheet?p=BR24L16FVJ-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24L16FVJ-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-BJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PDZVTFTR30B datasheet?p=PDZVTF30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTFTR30B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 32V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 32 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
Qualification: AEC-Q101
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PDZVTFTR30B datasheet?p=PDZVTF30B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTFTR30B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 32V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.67%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 32 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
Qualification: AEC-Q101
auf Bestellung 2830 Stücke:
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25+0.7 EUR
33+0.54 EUR
100+0.33 EUR
500+0.3 EUR
1000+0.21 EUR
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KDZVTFTR30B kdzvtftr30b-e.pdf
KDZVTFTR30B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 1W PMDU
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KDZVTFTR30B kdzvtftr30b-e.pdf
KDZVTFTR30B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 30V 1W PMDU
Produkt ist nicht verfügbar
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KDZVTFTR4.3B datasheet?p=KDZVTF4.3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTFTR4.3B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.3V 1W PMDU
Packaging: Tape & Reel (TR)
Tolerance: ±5.81%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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3000+0.22 EUR
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KDZVTFTR4.3B datasheet?p=KDZVTF4.3B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
KDZVTFTR4.3B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 4.3V 1W PMDU
Packaging: Cut Tape (CT)
Tolerance: ±5.81%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: PMDU
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 3993 Stücke:
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Anzahl Preis
23+0.77 EUR
29+0.63 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.24 EUR
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RB751CS-40FHT2RA datasheet?p=RB751CS-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB751CS-40FHT2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 30MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
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8000+0.15 EUR
16000+0.13 EUR
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RB751CS-40FHT2RA datasheet?p=RB751CS-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB751CS-40FHT2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 30MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
auf Bestellung 22097 Stücke:
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23+0.77 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
2000+0.18 EUR
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RBR1MM60ATFTR datasheet?p=RBR1MM60ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR1MM60ATFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Qualification: AEC-Q101
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3000+0.15 EUR
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RBR1MM60ATFTR datasheet?p=RBR1MM60ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR1MM60ATFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Qualification: AEC-Q101
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28+0.65 EUR
40+0.45 EUR
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500+0.23 EUR
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RBR3MM40ATFTR datasheet?p=RBR3MM40ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR3MM40ATFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.18 EUR
9000+0.17 EUR
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RBR3MM40ATFTR datasheet?p=RBR3MM40ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR3MM40ATFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10167 Stücke:
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19+0.93 EUR
34+0.53 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
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RBR2MM40CTFTR rbr2mm40ctftr-e.pdf
RBR2MM40CTFTR
Hersteller: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 40V-VR 2A-
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RBR2MM40CTFTR rbr2mm40ctftr-e.pdf
RBR2MM40CTFTR
Hersteller: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 40V-VR 2A-
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RBR3MM30ATFTR datasheet?p=RBR3MM30ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR3MM30ATFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.22 EUR
6000+0.21 EUR
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RBR3MM30ATFTR datasheet?p=RBR3MM30ATF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR3MM30ATFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7471 Stücke:
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Anzahl Preis
17+1.06 EUR
27+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
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RB541SM-40FHT2R rb541sm-40fht2r-e
RB541SM-40FHT2R
Hersteller: Rohm Semiconductor
Description: RB541SM-40FH IS THE HIGH RELIABI
Produkt ist nicht verfügbar
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RB541SM-40FHT2R rb541sm-40fht2r-e
RB541SM-40FHT2R
Hersteller: Rohm Semiconductor
Description: RB541SM-40FH IS THE HIGH RELIABI
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