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CSL0902DT1C CSL0902DT1C Rohm Semiconductor datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
auf Bestellung 1950 Stücke:
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28+0.64 EUR
100+0.46 EUR
500+0.38 EUR
1000+0.36 EUR
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CSL0902DT1 CSL0902DT1 Rohm Semiconductor datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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CSL0902DT1 CSL0902DT1 Rohm Semiconductor datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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RB068VWM100TR RB068VWM100TR Rohm Semiconductor datasheet?p=RB068VWM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
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RB068VWM-60TFTR RB068VWM-60TFTR Rohm Semiconductor datasheet?p=RB068VWM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
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RB068VWM-30TFTR RB068VWM-30TFTR Rohm Semiconductor datasheet?p=RB068VWM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
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RB068VWM150TFTR RB068VWM150TFTR Rohm Semiconductor datasheet?p=RB068VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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RB068VWM100TFTR RB068VWM100TFTR Rohm Semiconductor datasheet?p=RB068VWM100TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
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RB068VWM150TR RB068VWM150TR Rohm Semiconductor datasheet?p=RB068VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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RB068VWM-40TFTR RB068VWM-40TFTR Rohm Semiconductor datasheet?p=RB068VWM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
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RB068VWM-60TR RB068VWM-60TR Rohm Semiconductor datasheet?p=RB068VWM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
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RB068VWM-40TR RB068VWM-40TR Rohm Semiconductor datasheet?p=RB068VWM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
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RGSX5TS65HRC11 RGSX5TS65HRC11 Rohm Semiconductor datasheet?p=RGSX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
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RGSX5TS65EHRC11 RGSX5TS65EHRC11 Rohm Semiconductor datasheet?p=RGSX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
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RGSX5TS65EGC11 RGSX5TS65EGC11 Rohm Semiconductor datasheet?p=RGSX5TS65E&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 114A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
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RB480Y-90FHT2R RB480Y-90FHT2R Rohm Semiconductor datasheet?p=RB480Y-90FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Packaging: Tape & Reel (TR)
Package / Case: SC-75-4, SOT-543
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD4
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Qualification: AEC-Q101
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RB480KTL RB480KTL Rohm Semiconductor rb480ktl-e Description: DIODE ARRAY SCHOTTKY 40V UMD4
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SML-D22YVWT86 SML-D22YVWT86 Rohm Semiconductor sml-d22-e.pdf Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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SML-D22YVWT86 SML-D22YVWT86 Rohm Semiconductor sml-d22-e.pdf Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
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RV5A040APTCR1 RV5A040APTCR1 Rohm Semiconductor datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
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RV5A040APTCR1 RV5A040APTCR1 Rohm Semiconductor datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
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YFZVFHTR8.2B YFZVFHTR8.2B Rohm Semiconductor datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 7.99V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±2.57%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
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YFZVFHTR8.2B YFZVFHTR8.2B Rohm Semiconductor datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 7.99V 500MW TUMD2M
Packaging: Cut Tape (CT)
Tolerance: ±2.57%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
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RPI-574 Rohm Semiconductor RPI-574.PDF Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Packaging: Bulk
Package / Case: PCB Mount
Sensing Distance: 0.197" (5mm)
Sensing Method: Through-Beam
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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RS3E075ATTB1 RS3E075ATTB1 Rohm Semiconductor rs3e075attb1-e.pdf Description: PCH -30V -7.5A MIDDLE POWER MOSF
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RS3E075ATTB1 RS3E075ATTB1 Rohm Semiconductor rs3e075attb1-e.pdf Description: PCH -30V -7.5A MIDDLE POWER MOSF
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RH6P040BHTB1 RH6P040BHTB1 Rohm Semiconductor rh6p040bhtb1-e.pdf Description: NCH 100V 40A, HSMT8, POWER MOSFE
auf Bestellung 3000 Stücke:
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RH6P040BHTB1 RH6P040BHTB1 Rohm Semiconductor rh6p040bhtb1-e.pdf Description: NCH 100V 40A, HSMT8, POWER MOSFE
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RD3L07BBGTL1 RD3L07BBGTL1 Rohm Semiconductor datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
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RD3L07BBGTL1 RD3L07BBGTL1 Rohm Semiconductor datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
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SDR10EZPF5103 SDR10EZPF5103 Rohm Semiconductor sdr-e.pdf Description: RES 510K OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
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SDR10EZPF5103 SDR10EZPF5103 Rohm Semiconductor sdr-e.pdf Description: RES 510K OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
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R6507ENXC7G R6507ENXC7G Rohm Semiconductor datasheet?p=R6507ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
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RV5C040APTCR1 RV5C040APTCR1 Rohm Semiconductor datasheet?p=RV5C040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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RV5C040APTCR1 RV5C040APTCR1 Rohm Semiconductor datasheet?p=RV5C040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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RSB6.8JS2T2R RSB6.8JS2T2R Rohm Semiconductor datasheet?p=RSB6.8JS2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
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RSB6.8JS2T2R RSB6.8JS2T2R Rohm Semiconductor datasheet?p=RSB6.8JS2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
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RSB6.8CST2R RSB6.8CST2R Rohm Semiconductor RSB6.8CS_DS.pdf Description: TVS DIODE 3.5VWM VMN2
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RSB6.8CST2R RSB6.8CST2R Rohm Semiconductor RSB6.8CS_DS.pdf Description: TVS DIODE 3.5VWM VMN2
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RSB6.8JS2FHT2R RSB6.8JS2FHT2R Rohm Semiconductor RSB6.8JS2FH.pdf Description: TVS DIODE 3.5VWM EMD6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Not For New Designs
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RSB6.8JS2FHT2R RSB6.8JS2FHT2R Rohm Semiconductor RSB6.8JS2FH.pdf Description: TVS DIODE 3.5VWM EMD6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Not For New Designs
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RSB6.8ZSNXT2N RSB6.8ZSNXT2N Rohm Semiconductor Description: TVS DIODE 3.5VWM GMD2
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RSB6.8SFHTE61 Rohm Semiconductor Description: DIODE ZENER SMD
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BU90T82-ZE2 BU90T82-ZE2 Rohm Semiconductor datasheet?p=BU90T82&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC DRIVER 8/0 27BIT LVDS DUAL
Packaging: Tape & Reel (TR)
Package / Case: 72-TFBGA
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Number of Drivers/Receivers: 8/0
Data Rate: 1.218Gbps
Protocol: LVDS
Part Status: Active
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BU90T82-ZE2 BU90T82-ZE2 Rohm Semiconductor datasheet?p=BU90T82&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC DRIVER 8/0 27BIT LVDS DUAL
Packaging: Cut Tape (CT)
Package / Case: 72-TFBGA
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Number of Drivers/Receivers: 8/0
Data Rate: 1.218Gbps
Protocol: LVDS
Part Status: Active
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BD9757MWV-E2 BD9757MWV-E2 Rohm Semiconductor Description: IC REG DGTL CAM 8OUT 44UQFN
Packaging: Tape & Reel (TR)
Package / Case: 44-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 8
Voltage - Input: 24V
Operating Temperature: -25°C ~ 85°C
Applications: Converter, Digital Camera
Supplier Device Package: UQFN044V6060
Produkt ist nicht verfügbar
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MCR01MRTJ101 MCR01MRTJ101 Rohm Semiconductor MCR01MRT_SeriesSpec.pdf Description: RES SMD 100 OHM 5% 1/16W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Discontinued at Digi-Key
Resistance: 100 Ohms
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BD63521EFV-EVK-001 BD63521EFV-EVK-001 Rohm Semiconductor bd63xxxefv-evk-001_ug-e.pdf Description: THIS EVALUATION BOARD IS A BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: BD63521
Supplied Contents: Board(s)
Primary Attributes: 8V ~ 28V Supply
Embedded: No
Part Status: Active
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BD2320UEFJ-LAE2 BD2320UEFJ-LAE2 Rohm Semiconductor datasheet?p=BD2320UEFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7.5V ~ 14.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 8-HTSOP-J
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Part Status: Active
DigiKey Programmable: Not Verified
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BD2320UEFJ-LAE2 BD2320UEFJ-LAE2 Rohm Semiconductor datasheet?p=BD2320UEFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7.5V ~ 14.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 8-HTSOP-J
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Part Status: Active
DigiKey Programmable: Not Verified
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LM2902FVJ-E2 LM2902FVJ-E2 Rohm Semiconductor datasheet?p=LM2902FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LM2902FVJ-E2 LM2902FVJ-E2 Rohm Semiconductor datasheet?p=LM2902FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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SH8MA4TB1 SH8MA4TB1 Rohm Semiconductor sh8ma4tb1-e.pdf Description: SH8MA4TB1 IS LOW ON-RESISTANCE A
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SH8MA4TB1 SH8MA4TB1 Rohm Semiconductor sh8ma4tb1-e.pdf Description: SH8MA4TB1 IS LOW ON-RESISTANCE A
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SFR03EZPF3321 SFR03EZPF3321 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPF3321 SFR03EZPF3321 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPJ475 SFR03EZPJ475 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPJ475 SFR03EZPJ475 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPJ1R8 SFR03EZPJ1R8 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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SFR03EZPJ1R8 SFR03EZPJ1R8 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
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CSL0902DT1C datasheet?p=CSL0902DT(C)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1C
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 710mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Grade: Automotive
Qualification: AEC-Q102
auf Bestellung 1950 Stücke:
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Anzahl Preis
20+0.92 EUR
28+0.64 EUR
100+0.46 EUR
500+0.38 EUR
1000+0.36 EUR
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CSL0902DT1 datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
Produkt ist nicht verfügbar
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CSL0902DT1 datasheet?p=CSL0902DT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902DT1
Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Orange
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 560mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 605nm
Supplier Device Package: 0603
Lens Transparency: Clear
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
auf Bestellung 1807 Stücke:
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25+0.72 EUR
36+0.49 EUR
100+0.35 EUR
500+0.29 EUR
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RB068VWM100TR datasheet?p=RB068VWM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM100TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
auf Bestellung 2994 Stücke:
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15+1.23 EUR
24+0.76 EUR
100+0.5 EUR
500+0.38 EUR
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RB068VWM-60TFTR datasheet?p=RB068VWM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-60TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
auf Bestellung 2352 Stücke:
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13+1.37 EUR
21+0.87 EUR
100+0.59 EUR
500+0.45 EUR
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RB068VWM-30TFTR datasheet?p=RB068VWM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-30TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
auf Bestellung 2965 Stücke:
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15+1.25 EUR
23+0.8 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.4 EUR
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RB068VWM150TFTR datasheet?p=RB068VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 2938 Stücke:
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13+1.43 EUR
21+0.88 EUR
100+0.58 EUR
500+0.44 EUR
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RB068VWM100TFTR datasheet?p=RB068VWM100TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM100TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
auf Bestellung 4398 Stücke:
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15+1.25 EUR
23+0.8 EUR
100+0.57 EUR
500+0.44 EUR
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RB068VWM150TR datasheet?p=RB068VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM150TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 2564 Stücke:
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14+1.27 EUR
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100+0.51 EUR
500+0.39 EUR
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RB068VWM-40TFTR datasheet?p=RB068VWM-40TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-40TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
auf Bestellung 1513 Stücke:
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13+1.43 EUR
20+0.89 EUR
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500+0.44 EUR
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RB068VWM-60TR datasheet?p=RB068VWM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-60TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
auf Bestellung 5402 Stücke:
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Anzahl Preis
14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
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RB068VWM-40TR datasheet?p=RB068VWM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068VWM-40TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
auf Bestellung 5744 Stücke:
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Anzahl Preis
15+1.23 EUR
24+0.76 EUR
100+0.5 EUR
500+0.38 EUR
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RGSX5TS65HRC11 datasheet?p=RGSX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
auf Bestellung 393 Stücke:
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2+10.86 EUR
30+7 EUR
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RGSX5TS65EHRC11 datasheet?p=RGSX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
auf Bestellung 390 Stücke:
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2+12.8 EUR
30+10.21 EUR
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RGSX5TS65EGC11 datasheet?p=RGSX5TS65E&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65EGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 114A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
auf Bestellung 419 Stücke:
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3+8.29 EUR
30+4.67 EUR
120+3.87 EUR
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RB480Y-90FHT2R datasheet?p=RB480Y-90FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB480Y-90FHT2R
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 90V 100MA EMD4
Packaging: Tape & Reel (TR)
Package / Case: SC-75-4, SOT-543
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD4
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 90 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB480KTL rb480ktl-e
RB480KTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 40V UMD4
Produkt ist nicht verfügbar
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SML-D22YVWT86 sml-d22-e.pdf
SML-D22YVWT86
Hersteller: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
Produkt ist nicht verfügbar
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SML-D22YVWT86 sml-d22-e.pdf
SML-D22YVWT86
Hersteller: Rohm Semiconductor
Description: 2-COLOR TYPE MINI-MOLD CHIP LED:
auf Bestellung 2825 Stücke:
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16+1.16 EUR
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RV5A040APTCR1 datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5A040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
auf Bestellung 3000 Stücke:
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3000+0.52 EUR
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RV5A040APTCR1 datasheet?p=RV5A040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5A040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
auf Bestellung 5995 Stücke:
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Anzahl Preis
10+1.81 EUR
15+1.23 EUR
100+0.83 EUR
500+0.66 EUR
1000+0.58 EUR
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YFZVFHTR8.2B datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Packaging: Tape & Reel (TR)
Tolerance: ±2.57%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.15 EUR
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YFZVFHTR8.2B datasheet?p=YFZVFH8.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
YFZVFHTR8.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.99V 500MW TUMD2M
Packaging: Cut Tape (CT)
Tolerance: ±2.57%
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: TUMD2M
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
auf Bestellung 5574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
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RPI-574 RPI-574.PDF
Hersteller: Rohm Semiconductor
Description: SENSOR OPT SLOT PHOTOTRAN PCB MT
Packaging: Bulk
Package / Case: PCB Mount
Sensing Distance: 0.197" (5mm)
Sensing Method: Through-Beam
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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RS3E075ATTB1 rs3e075attb1-e.pdf
RS3E075ATTB1
Hersteller: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
Produkt ist nicht verfügbar
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RS3E075ATTB1 rs3e075attb1-e.pdf
RS3E075ATTB1
Hersteller: Rohm Semiconductor
Description: PCH -30V -7.5A MIDDLE POWER MOSF
auf Bestellung 2485 Stücke:
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10+1.88 EUR
11+1.68 EUR
100+1.31 EUR
500+1.09 EUR
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RH6P040BHTB1 rh6p040bhtb1-e.pdf
RH6P040BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
auf Bestellung 3000 Stücke:
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3000+1.35 EUR
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RH6P040BHTB1 rh6p040bhtb1-e.pdf
RH6P040BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 100V 40A, HSMT8, POWER MOSFE
auf Bestellung 5970 Stücke:
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Anzahl Preis
6+2.96 EUR
10+2.66 EUR
100+2.14 EUR
500+1.76 EUR
1000+1.45 EUR
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RD3L07BBGTL1 datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L07BBGTL1
Hersteller: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Produkt ist nicht verfügbar
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RD3L07BBGTL1 datasheet?p=RD3L07BBG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3L07BBGTL1
Hersteller: Rohm Semiconductor
Description: NCH 60V 115A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
auf Bestellung 2430 Stücke:
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Anzahl Preis
4+5.17 EUR
10+4.64 EUR
100+3.73 EUR
500+3.07 EUR
1000+2.54 EUR
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SDR10EZPF5103 sdr-e.pdf
SDR10EZPF5103
Hersteller: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
Produkt ist nicht verfügbar
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SDR10EZPF5103 sdr-e.pdf
SDR10EZPF5103
Hersteller: Rohm Semiconductor
Description: RES 510K OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 510 kOhms
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
84+0.21 EUR
122+0.15 EUR
141+0.12 EUR
500+0.092 EUR
1000+0.081 EUR
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R6507ENXC7G datasheet?p=R6507ENX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6507ENXC7G
Hersteller: Rohm Semiconductor
Description: 650V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 998 Stücke:
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Anzahl Preis
7+2.89 EUR
50+1.84 EUR
100+1.09 EUR
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RV5C040APTCR1 datasheet?p=RV5C040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5C040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Produkt ist nicht verfügbar
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RV5C040APTCR1 datasheet?p=RV5C040AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RV5C040APTCR1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 4A DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1616-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V, 0V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
auf Bestellung 2997 Stücke:
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10+1.9 EUR
15+1.22 EUR
100+0.87 EUR
500+0.71 EUR
1000+0.6 EUR
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RSB6.8JS2T2R datasheet?p=RSB6.8JS2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB6.8JS2T2R
Hersteller: Rohm Semiconductor
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
auf Bestellung 8000 Stücke:
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8000+0.45 EUR
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RSB6.8JS2T2R datasheet?p=RSB6.8JS2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSB6.8JS2T2R
Hersteller: Rohm Semiconductor
Description: LOW CAPACITANCE ZENER DIODE : RO
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.03 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.5 EUR
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RSB6.8CST2R RSB6.8CS_DS.pdf
RSB6.8CST2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
Produkt ist nicht verfügbar
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RSB6.8CST2R RSB6.8CS_DS.pdf
RSB6.8CST2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM VMN2
auf Bestellung 30 Stücke:
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23+0.77 EUR
29+0.63 EUR
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RSB6.8JS2FHT2R RSB6.8JS2FH.pdf
RSB6.8JS2FHT2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Not For New Designs
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RSB6.8JS2FHT2R RSB6.8JS2FH.pdf
RSB6.8JS2FHT2R
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: EMD6
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 7970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
18+1.01 EUR
100+0.75 EUR
500+0.59 EUR
1000+0.46 EUR
2000+0.42 EUR
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RSB6.8ZSNXT2N
RSB6.8ZSNXT2N
Hersteller: Rohm Semiconductor
Description: TVS DIODE 3.5VWM GMD2
Produkt ist nicht verfügbar
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RSB6.8SFHTE61
Hersteller: Rohm Semiconductor
Description: DIODE ZENER SMD
Produkt ist nicht verfügbar
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BU90T82-ZE2 datasheet?p=BU90T82&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU90T82-ZE2
Hersteller: Rohm Semiconductor
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Packaging: Tape & Reel (TR)
Package / Case: 72-TFBGA
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Number of Drivers/Receivers: 8/0
Data Rate: 1.218Gbps
Protocol: LVDS
Part Status: Active
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1500+7.5 EUR
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BU90T82-ZE2 datasheet?p=BU90T82&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU90T82-ZE2
Hersteller: Rohm Semiconductor
Description: IC DRIVER 8/0 27BIT LVDS DUAL
Packaging: Cut Tape (CT)
Package / Case: 72-TFBGA
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.6V
Number of Drivers/Receivers: 8/0
Data Rate: 1.218Gbps
Protocol: LVDS
Part Status: Active
auf Bestellung 6282 Stücke:
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2+13.83 EUR
10+10.73 EUR
25+9.96 EUR
100+9.11 EUR
250+8.7 EUR
500+8.46 EUR
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BD9757MWV-E2
BD9757MWV-E2
Hersteller: Rohm Semiconductor
Description: IC REG DGTL CAM 8OUT 44UQFN
Packaging: Tape & Reel (TR)
Package / Case: 44-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 8
Voltage - Input: 24V
Operating Temperature: -25°C ~ 85°C
Applications: Converter, Digital Camera
Supplier Device Package: UQFN044V6060
Produkt ist nicht verfügbar
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MCR01MRTJ101 MCR01MRT_SeriesSpec.pdf
MCR01MRTJ101
Hersteller: Rohm Semiconductor
Description: RES SMD 100 OHM 5% 1/16W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Discontinued at Digi-Key
Resistance: 100 Ohms
Produkt ist nicht verfügbar
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BD63521EFV-EVK-001 bd63xxxefv-evk-001_ug-e.pdf
BD63521EFV-EVK-001
Hersteller: Rohm Semiconductor
Description: THIS EVALUATION BOARD IS A BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: BD63521
Supplied Contents: Board(s)
Primary Attributes: 8V ~ 28V Supply
Embedded: No
Part Status: Active
auf Bestellung 3 Stücke:
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Anzahl Preis
1+237.25 EUR
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BD2320UEFJ-LAE2 datasheet?p=BD2320UEFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2320UEFJ-LAE2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7.5V ~ 14.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 8-HTSOP-J
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BD2320UEFJ-LAE2 datasheet?p=BD2320UEFJ-LA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2320UEFJ-LAE2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 7.5V ~ 14.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 8-HTSOP-J
Rise / Fall Time (Typ): 8ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2172 Stücke:
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Anzahl Preis
4+5.42 EUR
10+3.45 EUR
25+2.94 EUR
100+2.36 EUR
250+2.08 EUR
500+1.9 EUR
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LM2902FVJ-E2 datasheet?p=LM2902FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2902FVJ-E2
Hersteller: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
auf Bestellung 2500 Stücke:
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2500+0.77 EUR
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LM2902FVJ-E2 datasheet?p=LM2902FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM2902FVJ-E2
Hersteller: Rohm Semiconductor
Description: GROUND SENSE OPERATIONAL AMPLIFI
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
auf Bestellung 4990 Stücke:
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Anzahl Preis
11+1.62 EUR
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100+0.93 EUR
250+0.87 EUR
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SH8MA4TB1 sh8ma4tb1-e.pdf
SH8MA4TB1
Hersteller: Rohm Semiconductor
Description: SH8MA4TB1 IS LOW ON-RESISTANCE A
auf Bestellung 7500 Stücke:
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Anzahl Preis
2500+0.86 EUR
5000+0.81 EUR
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SH8MA4TB1 sh8ma4tb1-e.pdf
SH8MA4TB1
Hersteller: Rohm Semiconductor
Description: SH8MA4TB1 IS LOW ON-RESISTANCE A
auf Bestellung 8960 Stücke:
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Anzahl Preis
9+2.02 EUR
10+1.8 EUR
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SFR03EZPF3321 sfr-e.pdf
SFR03EZPF3321
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
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Anzahl Preis
5000+0.026 EUR
10000+0.023 EUR
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SFR03EZPF3321 sfr-e.pdf
SFR03EZPF3321
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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Anzahl Preis
84+0.21 EUR
88+0.2 EUR
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SFR03EZPJ475 sfr-e.pdf
SFR03EZPJ475
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
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Anzahl Preis
5000+0.02 EUR
10000+0.018 EUR
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SFR03EZPJ475 sfr-e.pdf
SFR03EZPJ475
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
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Anzahl Preis
112+0.16 EUR
295+0.06 EUR
1000+0.026 EUR
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SFR03EZPJ1R8 sfr-e.pdf
SFR03EZPJ1R8
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.02 EUR
10000+0.018 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ1R8 sfr-e.pdf
SFR03EZPJ1R8
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
295+0.06 EUR
1000+0.026 EUR
2500+0.023 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
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