Suchergebnisse für "012n03" : 19

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BSB012N03LX3G Infineon Technologies INFNS16701-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
auf Bestellung 5508 Stücke:
Lieferzeit 10-14 Tag (e)
278+1.82 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BSB012N03LX3GXUMA1 Infineon Technologies INFNS16701-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4398 Stücke:
Lieferzeit 10-14 Tag (e)
278+1.82 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
FDMC012N03 FDMC012N03 onsemi / Fairchild fdmc012n03-d.pdf MOSFETs PT9 N-ch 30V/12V Power Trench MOSFET
auf Bestellung 1826 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.84 EUR
10+4.01 EUR
25+3.80 EUR
100+2.94 EUR
250+2.83 EUR
500+2.41 EUR
1000+2.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMC012N03 FDMC012N03 onsemi fdmc012n03-d.pdf Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
auf Bestellung 1097 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.41 EUR
10+4.20 EUR
100+2.95 EUR
500+2.42 EUR
1000+2.25 EUR
Mindestbestellmenge: 3
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ISC012N03LF2SATMA1 ISC012N03LF2SATMA1 Infineon Technologies Infineon_ISC012N03LF2S_DataSheet_v01_01_EN-3538913.pdf TRENCH <= 40V
auf Bestellung 5000 Stücke:
Lieferzeit 95-99 Tag (e)
2+2.39 EUR
10+1.62 EUR
100+1.14 EUR
500+1.02 EUR
1000+0.88 EUR
2500+0.82 EUR
5000+0.80 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
VUO30-12N03 IXYS CDH4-1
auf Bestellung 19 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VUO50-12N03 IXYS J3-1
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VUO50-12N03 IXYS
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VUO60-12N03 MODULE
auf Bestellung 153 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
10094012-N0300YYLF Amphenol ICC (FCI) 10094012.pdf Description: CBL ASSY DENSISHD 16P-RJ45 9.84'
Packaging: Bulk
Connector Type: DensiShield™ 16 pos to RJ45, 8p8c
Length: 9.84' (3.00m)
Shielding: Shielded
Cable Type: Round
Part Status: Active
Produkt ist nicht verfügbar
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BSB012N03LX3 G BSB012N03LX3 G Infineon Technologies BSB012N03LX3G.pdf Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
Produkt ist nicht verfügbar
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FDMC012N03 ONSEMI fdmc012n03-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMC012N03 ONSEMI fdmc012n03-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMC012N03 FDMC012N03 onsemi fdmc012n03-d.pdf Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
Produkt ist nicht verfügbar
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ISC012N03LF2SATMA1 ISC012N03LF2SATMA1 Infineon Technologies Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC012N03LF2SATMA1 ISC012N03LF2SATMA1 Infineon Technologies Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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M2012SA2G30 M2012SA2G30 NKK Switches MtogglesAnglePC-1663562.pdf Toggle Switches SPDT ON-NONE-ON
Produkt ist nicht verfügbar
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VUO50-12NO3 VUO50-12NO3 IXYS VUO50.pdf Description: BRIDGE RECT 3P 1.2KV 58A FO-F-B
Packaging: Box
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Produkt ist nicht verfügbar
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BSB012N03LX3G INFNS16701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
auf Bestellung 5508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
278+1.82 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BSB012N03LX3GXUMA1 INFNS16701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
278+1.82 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
FDMC012N03 fdmc012n03-d.pdf
FDMC012N03
Hersteller: onsemi / Fairchild
MOSFETs PT9 N-ch 30V/12V Power Trench MOSFET
auf Bestellung 1826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.84 EUR
10+4.01 EUR
25+3.80 EUR
100+2.94 EUR
250+2.83 EUR
500+2.41 EUR
1000+2.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMC012N03 fdmc012n03-d.pdf
FDMC012N03
Hersteller: onsemi
Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
auf Bestellung 1097 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.41 EUR
10+4.20 EUR
100+2.95 EUR
500+2.42 EUR
1000+2.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
ISC012N03LF2SATMA1 Infineon_ISC012N03LF2S_DataSheet_v01_01_EN-3538913.pdf
ISC012N03LF2SATMA1
Hersteller: Infineon Technologies
TRENCH <= 40V
auf Bestellung 5000 Stücke:
Lieferzeit 95-99 Tag (e)
Anzahl Preis
2+2.39 EUR
10+1.62 EUR
100+1.14 EUR
500+1.02 EUR
1000+0.88 EUR
2500+0.82 EUR
5000+0.80 EUR
Mindestbestellmenge: 2
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VUO30-12N03
Hersteller: IXYS
CDH4-1
auf Bestellung 19 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VUO50-12N03
Hersteller: IXYS
J3-1
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VUO50-12N03
Hersteller: IXYS
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VUO60-12N03
MODULE
auf Bestellung 153 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
10094012-N0300YYLF 10094012.pdf
Hersteller: Amphenol ICC (FCI)
Description: CBL ASSY DENSISHD 16P-RJ45 9.84'
Packaging: Bulk
Connector Type: DensiShield™ 16 pos to RJ45, 8p8c
Length: 9.84' (3.00m)
Shielding: Shielded
Cable Type: Round
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB012N03LX3 G BSB012N03LX3G.pdf
BSB012N03LX3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
Produkt ist nicht verfügbar
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FDMC012N03 fdmc012n03-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMC012N03 fdmc012n03-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMC012N03 fdmc012n03-d.pdf
FDMC012N03
Hersteller: onsemi
Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC012N03LF2SATMA1
ISC012N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC012N03LF2SATMA1
ISC012N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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M2012SA2G30 MtogglesAnglePC-1663562.pdf
M2012SA2G30
Hersteller: NKK Switches
Toggle Switches SPDT ON-NONE-ON
Produkt ist nicht verfügbar
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VUO50-12NO3 VUO50.pdf
VUO50-12NO3
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.2KV 58A FO-F-B
Packaging: Box
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH