Suchergebnisse für "25n120" : 140

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NGTB25N120IHLWG NGTB25N120IHLWG ON Semiconductor ngtb25n120ihlw-d.pdf Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
NGTB25N120LWG NGTB25N120LWG onsemi NGTB25N120LWG.pdf Description: IGBT 1200V 50A 192W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 89ns/235ns
Switching Energy: 3.4mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Produkt ist nicht verfügbar
NGTB25N120LWG NGTB25N120LWG ON Semiconductor ngtb25n120l-d.pdf Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
NGTB25N120SWG NGTB25N120SWG onsemi ngtb25n120sw-d.pdf Description: IGBT 25A 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 154 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
Produkt ist nicht verfügbar
NGTB25N120SWG NGTB25N120SWG ON Semiconductor ngtb25n120sw-d.pdf Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
NGTG25N120FL2WG NGTG25N120FL2WG onsemi ngtg25n120fl2w-d.pdf Description: IGBT 1200V 25A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
Produkt ist nicht verfügbar
NGTG25N120FL2WG NGTG25N120FL2WG ON Semiconductor ngtg25n120fl2w-d.pdf Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
RH25N12000JS03 Vishay Sfernice Description: SFERNICE FIXED RESISTORS
Packaging: Bag
Part Status: Active
Produkt ist nicht verfügbar
RH25N120R0JS03 Vishay Sfernice Description: SFERNICE FIXED RESISTORS
Packaging: Bag
Part Status: Active
Produkt ist nicht verfügbar
SFGH25N120FTDS onsemi Description: SFGH25N120FTDS
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 535 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/151ns
Switching Energy: 1.42mJ (on), 1.16mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
Produkt ist nicht verfügbar
SGW25N120FKSA1 SGW25N120FKSA1 Infineon Technologies SGW25N120_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42837853d9e Description: IGBT 1200V 46A 313W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
Produkt ist nicht verfügbar
SKW25N120FKSA1 SKW25N120FKSA1 Infineon Technologies SKW25N120_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427fc7f3d32 Description: IGBT 1200V 46A 313W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
Produkt ist nicht verfügbar
SKW25N120FKSA1 SKW25N120FKSA1 Infineon Technologies 6815skw25n120_rev2g_1.pdffolderiddb3a304412b407950112b408e8c90004file.pdf Trans IGBT Chip N-CH 1200V 46A 313000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
TSG25N120CN C0G Taiwan Semiconductor TSG25N120CN C0G
Produkt ist nicht verfügbar
NGTB25N120IHLWG ngtb25n120ihlw-d.pdf
NGTB25N120IHLWG
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
NGTB25N120LWG NGTB25N120LWG.pdf
NGTB25N120LWG
Hersteller: onsemi
Description: IGBT 1200V 50A 192W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 89ns/235ns
Switching Energy: 3.4mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Produkt ist nicht verfügbar
NGTB25N120LWG ngtb25n120l-d.pdf
NGTB25N120LWG
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
NGTB25N120SWG ngtb25n120sw-d.pdf
NGTB25N120SWG
Hersteller: onsemi
Description: IGBT 25A 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 154 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
Produkt ist nicht verfügbar
NGTB25N120SWG ngtb25n120sw-d.pdf
NGTB25N120SWG
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
NGTG25N120FL2WG ngtg25n120fl2w-d.pdf
NGTG25N120FL2WG
Hersteller: onsemi
Description: IGBT 1200V 25A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
Produkt ist nicht verfügbar
NGTG25N120FL2WG ngtg25n120fl2w-d.pdf
NGTG25N120FL2WG
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
RH25N12000JS03
Hersteller: Vishay Sfernice
Description: SFERNICE FIXED RESISTORS
Packaging: Bag
Part Status: Active
Produkt ist nicht verfügbar
RH25N120R0JS03
Hersteller: Vishay Sfernice
Description: SFERNICE FIXED RESISTORS
Packaging: Bag
Part Status: Active
Produkt ist nicht verfügbar
SFGH25N120FTDS
Hersteller: onsemi
Description: SFGH25N120FTDS
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 535 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/151ns
Switching Energy: 1.42mJ (on), 1.16mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
Produkt ist nicht verfügbar
SGW25N120FKSA1 SGW25N120_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42837853d9e
SGW25N120FKSA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 46A 313W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
Produkt ist nicht verfügbar
SKW25N120FKSA1 SKW25N120_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427fc7f3d32
SKW25N120FKSA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 46A 313W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
Produkt ist nicht verfügbar
SKW25N120FKSA1 6815skw25n120_rev2g_1.pdffolderiddb3a304412b407950112b408e8c90004file.pdf
SKW25N120FKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 46A 313000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
TSG25N120CN C0G
Hersteller: Taiwan Semiconductor
TSG25N120CN C0G
Produkt ist nicht verfügbar
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