Suchergebnisse für "2N60B" : 57

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2N60-B
auf Bestellung 10000 Stücke:
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2N60B CAN
auf Bestellung 1030 Stücke:
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AM2N60B AM2N60B Analog Power Inc. datasheet.php?part=AM2N60B Description: MOSFET N-CH 600V 2.2A TO-263
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 1 Stücke:
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HGT1S12N60B3 HGT1S12N60B3 Harris Corporation HRISSC96-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 27A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 917 Stücke:
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150+3.04 EUR
Mindestbestellmenge: 150
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HGT1S12N60B3D HGT1S12N60B3D Harris Corporation HRISSD10-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 27A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 400 Stücke:
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150+3.04 EUR
Mindestbestellmenge: 150
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HGT1S12N60B3DS Harris Corporation HRISSD10-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 27A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 1100 Stücke:
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188+2.43 EUR
Mindestbestellmenge: 188
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IXGR72N60B3H1 IXGR72N60B3H1 IXYS littelfuse-discrete-igbts-ixgr72n60b3h1-datasheet?assetguid=c379d004-dec6-4710-9939-bb942d6ffc1d Description: IGBT PT 600V 75A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 200 W
auf Bestellung 148 Stücke:
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1+36.96 EUR
30+23.62 EUR
120+22.02 EUR
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IXGR72N60B3H1 IXGR72N60B3H1 IXYS Littelfuse_Discrete_IGBTs_PT_IXGR72N60B3H1_Datasheet.PDF IGBTs Mid-Frequency Range 15khz-40khz w/ Diode
auf Bestellung 487 Stücke:
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1+35.11 EUR
10+25.48 EUR
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SGD02N60BUMA1 SGD02N60BUMA1 Infineon Technologies SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6 Description: IGBT NPT 600V 6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
auf Bestellung 25404 Stücke:
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317+1.43 EUR
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SSP2N60B SSP2N60B Fairchild Semiconductor FAIRS20350-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 372000 Stücke:
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1137+0.39 EUR
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SSR2N60B SSR2N60B Fairchild Semiconductor FAIRS17510-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 4079 Stücke:
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519+0.88 EUR
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SSR2N60BTF SSR2N60BTF Fairchild Semiconductor FAIRS17510-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 165500 Stücke:
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1093+0.41 EUR
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SSS2N60B SSS2N60B Fairchild Semiconductor FAIRS20350-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 3094 Stücke:
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1069+0.42 EUR
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SSU2N60BTU SSU2N60BTU Fairchild Semiconductor FAIRS17510-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 1869 Stücke:
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649+0.69 EUR
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SSW2N60BTM SSW2N60BTM Fairchild Semiconductor FAIRS17625-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 3.13W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 2622 Stücke:
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443+1.03 EUR
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FQP2N60B
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FQU2N60B
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IXGH32N60B IXYS
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SGD02N60BUMA1 Infineon SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6
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SS2N60B
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SSI2N60B
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SSP2N60B FAIRS20350-1.pdf?t.download=true&u=5oefqw
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SSP2N60Bchai
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SSR2N60B FAIRCHILD FAIRS17510-1.pdf?t.download=true&u=5oefqw 07+ TO-252
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SSR2N60B FAIRCHILD FAIRS17510-1.pdf?t.download=true&u=5oefqw TO-252
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SSR2N60BTM FAIRS17510-1.pdf?t.download=true&u=5oefqw
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SSS2N60B FAIRCHILD FAIRS20350-1.pdf?t.download=true&u=5oefqw
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SSS2N60B FAIRCHILD FAIRS20350-1.pdf?t.download=true&u=5oefqw TO-220F
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SSU2N60B Fairchild
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SSU2N60BTU FAIRS17510-1.pdf?t.download=true&u=5oefqw
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SSW2N60B FAIRCHILD 07+ TO-263
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SSW2N60B FAIRCHILD TO-263
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SSW2N60BTM FAIRS17625-1.pdf?t.download=true&u=5oefqw
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XGH32N60B IXYS
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YMP2N60BCD
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2N60B
Produktcode: 56361
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Transistoren > MOSFET N-CH
Uds,V: 600
Idd,A: 2
Produkt ist nicht verfügbar
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IXGR72N60B3H1
Produktcode: 150400
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littelfuse-discrete-igbts-ixgr72n60b3h1-datasheet?assetguid=c379d004-dec6-4710-9939-bb942d6ffc1d Transistoren > Transistoren IGBT, Leistungsmodule
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SSP2N60B
Produktcode: 45183
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FAIRS20350-1.pdf?t.download=true&u=5oefqw Verschiedene Bauteile > Verschiedene Bauteile 2
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SSS2N60B (Transistor)
Produktcode: 48417
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Verschiedene Bauteile > Verschiedene Bauteile 2
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HGTG12N60B3 HGTG12N60B3 onsemi HGTG12N60B3.pdf Description: IGBT 600V 27A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 150µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 51 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
Produkt ist nicht verfügbar
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IXGA12N60B IXGA12N60B IXYS Description: IGBT 600V 24A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGH12N60B IXGH12N60B IXYS Description: IGBT 600V 24A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
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IXGH12N60BD1 IXGH12N60BD1 IXYS Description: IGBT 600V 24A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
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IXGH32N60B IXGH32N60B IXYS Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 800µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 125 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
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IXGH32N60BD1 IXGH32N60BD1 IXYS Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGH32N60BU1 IXGH32N60BU1 IXYS Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGH72N60B3 IXGH72N60B3 IXYS littelfuse-discrete-igbts-ixg-72n60b3-datasheet?assetguid=b288b33a-85f1-4ac5-ba9b-396ba5418ae1 Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/150ns
Switching Energy: 1.38mJ (on), 1.05mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
Produkt ist nicht verfügbar
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IXGK72N60B3H1 IXGK72N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAEEB2C2E5D820&compId=IXGK(X)72N60B3H1.pdf?ci_sign=a5aba8865088ad6a2ff712e7b9f0f02cb4b7ffac Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
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IXGK72N60B3H1 IXGK72N60B3H1 IXYS littelfuse-discrete-igbts-ixg-72n60b3h1-datasheet?assetguid=272adbb2-17a4-41da-ac17-1703f6967279 Description: IGBT PT 600V 75A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 540 W
Produkt ist nicht verfügbar
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IXGK72N60B3H1 IXGK72N60B3H1 IXYS Littelfuse_Discrete_IGBTs_PT_IXG_72N60B3H1_Datasheet.PDF IGBTs Mid-Frequency Range 15khz-40khz w/ Diode
Produkt ist nicht verfügbar
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IXGP12N60B IXGP12N60B IXYS Description: IGBT 600V 24A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGR72N60B3H1 IXGR72N60B3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAFC0A869B5820&compId=IXGR72N60B3H1.pdf?ci_sign=3c041375a94491207a4b390f85ce524a1ae5bf68 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
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IXGT32N60BD1 IXGT32N60BD1 IXYS Description: IGBT 600V 60A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGX72N60B3H1 IXGX72N60B3H1 IXYS littelfuse-discrete-igbts-ixg-72n60b3h1-datasheet?assetguid=272adbb2-17a4-41da-ac17-1703f6967279 Description: IGBT PT 600V 75A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 540 W
Produkt ist nicht verfügbar
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SGD02N60BUMA1 SGD02N60BUMA1 Infineon Technologies SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6 Description: IGBT NPT 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
Produkt ist nicht verfügbar
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2N60-B
auf Bestellung 10000 Stücke:
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2N60B
CAN
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AM2N60B datasheet.php?part=AM2N60B
AM2N60B
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 600V 2.2A TO-263
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 1 Stücke:
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HGT1S12N60B3 HRISSC96-1.pdf?t.download=true&u=5oefqw
HGT1S12N60B3
Hersteller: Harris Corporation
Description: IGBT 600V 27A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 917 Stücke:
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150+3.04 EUR
Mindestbestellmenge: 150
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HGT1S12N60B3D HRISSD10-1.pdf?t.download=true&u=5oefqw
HGT1S12N60B3D
Hersteller: Harris Corporation
Description: IGBT 600V 27A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
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HGT1S12N60B3DS HRISSD10-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 27A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 1100 Stücke:
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IXGR72N60B3H1 littelfuse-discrete-igbts-ixgr72n60b3h1-datasheet?assetguid=c379d004-dec6-4710-9939-bb942d6ffc1d
IXGR72N60B3H1
Hersteller: IXYS
Description: IGBT PT 600V 75A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 200 W
auf Bestellung 148 Stücke:
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Anzahl Preis
1+36.96 EUR
30+23.62 EUR
120+22.02 EUR
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IXGR72N60B3H1 Littelfuse_Discrete_IGBTs_PT_IXGR72N60B3H1_Datasheet.PDF
IXGR72N60B3H1
Hersteller: IXYS
IGBTs Mid-Frequency Range 15khz-40khz w/ Diode
auf Bestellung 487 Stücke:
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Anzahl Preis
1+35.11 EUR
10+25.48 EUR
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SGD02N60BUMA1 SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6
SGD02N60BUMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
auf Bestellung 25404 Stücke:
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Anzahl Preis
317+1.43 EUR
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SSP2N60B FAIRS20350-1.pdf?t.download=true&u=5oefqw
SSP2N60B
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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SSR2N60B FAIRS17510-1.pdf?t.download=true&u=5oefqw
SSR2N60B
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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519+0.88 EUR
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SSR2N60BTF FAIRS17510-1.pdf?t.download=true&u=5oefqw
SSR2N60BTF
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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1093+0.41 EUR
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SSS2N60B FAIRS20350-1.pdf?t.download=true&u=5oefqw
SSS2N60B
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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1069+0.42 EUR
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SSU2N60BTU FAIRS17510-1.pdf?t.download=true&u=5oefqw
SSU2N60BTU
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 1869 Stücke:
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Anzahl Preis
649+0.69 EUR
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SSW2N60BTM FAIRS17625-1.pdf?t.download=true&u=5oefqw
SSW2N60BTM
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 3.13W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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Anzahl Preis
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FQP2N60B
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FQU2N60B
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IXGH32N60B
Hersteller: IXYS
auf Bestellung 2100 Stücke:
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SGD02N60BUMA1 SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6
Hersteller: Infineon
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SS2N60B
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SSI2N60B
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SSP2N60B FAIRS20350-1.pdf?t.download=true&u=5oefqw
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SSP2N60Bchai
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SSR2N60B FAIRS17510-1.pdf?t.download=true&u=5oefqw
Hersteller: FAIRCHILD
07+ TO-252
auf Bestellung 21000 Stücke:
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SSR2N60B FAIRS17510-1.pdf?t.download=true&u=5oefqw
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TO-252
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SSR2N60BTM FAIRS17510-1.pdf?t.download=true&u=5oefqw
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SSS2N60B FAIRS20350-1.pdf?t.download=true&u=5oefqw
Hersteller: FAIRCHILD
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SSS2N60B FAIRS20350-1.pdf?t.download=true&u=5oefqw
Hersteller: FAIRCHILD
TO-220F
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SSU2N60B
Hersteller: Fairchild
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SSU2N60BTU FAIRS17510-1.pdf?t.download=true&u=5oefqw
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SSW2N60B
Hersteller: FAIRCHILD
07+ TO-263
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SSW2N60B
Hersteller: FAIRCHILD
TO-263
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SSW2N60BTM FAIRS17625-1.pdf?t.download=true&u=5oefqw
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XGH32N60B
Hersteller: IXYS
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YMP2N60BCD
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2N60B
Produktcode: 56361
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Transistoren > MOSFET N-CH
Uds,V: 600
Idd,A: 2
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IXGR72N60B3H1
Produktcode: 150400
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littelfuse-discrete-igbts-ixgr72n60b3h1-datasheet?assetguid=c379d004-dec6-4710-9939-bb942d6ffc1d
Transistoren > Transistoren IGBT, Leistungsmodule
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SSP2N60B
Produktcode: 45183
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FAIRS20350-1.pdf?t.download=true&u=5oefqw
Verschiedene Bauteile > Verschiedene Bauteile 2
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SSS2N60B (Transistor)
Produktcode: 48417
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Verschiedene Bauteile > Verschiedene Bauteile 2
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HGTG12N60B3 HGTG12N60B3.pdf
HGTG12N60B3
Hersteller: onsemi
Description: IGBT 600V 27A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 150µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 51 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
Produkt ist nicht verfügbar
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IXGA12N60B
IXGA12N60B
Hersteller: IXYS
Description: IGBT 600V 24A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
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IXGH12N60B
IXGH12N60B
Hersteller: IXYS
Description: IGBT 600V 24A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGH12N60BD1
IXGH12N60BD1
Hersteller: IXYS
Description: IGBT 600V 24A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGH32N60B
IXGH32N60B
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 800µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 125 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGH32N60BD1
IXGH32N60BD1
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGH32N60BU1
IXGH32N60BU1
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGH72N60B3 littelfuse-discrete-igbts-ixg-72n60b3-datasheet?assetguid=b288b33a-85f1-4ac5-ba9b-396ba5418ae1
IXGH72N60B3
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/150ns
Switching Energy: 1.38mJ (on), 1.05mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
Produkt ist nicht verfügbar
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IXGK72N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAEEB2C2E5D820&compId=IXGK(X)72N60B3H1.pdf?ci_sign=a5aba8865088ad6a2ff712e7b9f0f02cb4b7ffac
IXGK72N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
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IXGK72N60B3H1 littelfuse-discrete-igbts-ixg-72n60b3h1-datasheet?assetguid=272adbb2-17a4-41da-ac17-1703f6967279
IXGK72N60B3H1
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 540 W
Produkt ist nicht verfügbar
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IXGK72N60B3H1 Littelfuse_Discrete_IGBTs_PT_IXG_72N60B3H1_Datasheet.PDF
IXGK72N60B3H1
Hersteller: IXYS
IGBTs Mid-Frequency Range 15khz-40khz w/ Diode
Produkt ist nicht verfügbar
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IXGP12N60B
IXGP12N60B
Hersteller: IXYS
Description: IGBT 600V 24A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGR72N60B3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFAFC0A869B5820&compId=IXGR72N60B3H1.pdf?ci_sign=3c041375a94491207a4b390f85ce524a1ae5bf68
IXGR72N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
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IXGT32N60BD1
IXGT32N60BD1
Hersteller: IXYS
Description: IGBT 600V 60A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXGX72N60B3H1 littelfuse-discrete-igbts-ixg-72n60b3h1-datasheet?assetguid=272adbb2-17a4-41da-ac17-1703f6967279
IXGX72N60B3H1
Hersteller: IXYS
Description: IGBT PT 600V 75A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 540 W
Produkt ist nicht verfügbar
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SGD02N60BUMA1 SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6
SGD02N60BUMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
Produkt ist nicht verfügbar
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