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SUD50N03-10 SUD50N03-10
Produktcode: 36248
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Vishay sud50n03-10.pdf Transistoren > MOSFET N-CH
Gehäuse: D-Pak
Uds,V: 30
Idd,A: 15
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 3200/55
JHGF: SMD
auf Bestellung 12 Stück:
Lieferzeit 21-28 Tag (e)
1+0.98 EUR
10+0.84 EUR
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50N03-07 00+
auf Bestellung 229 Stücke:
Lieferzeit 21-28 Tag (e)
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50N03LT PHILIPS
auf Bestellung 588 Stücke:
Lieferzeit 21-28 Tag (e)
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50M030050N030 50M030050N030 Essentra Components 5020.PDF Description: PAN SLOTTED SCREW, M3 X .5 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M3x0.5
Type: Machine Screw
Length - Overall: 1.252" (31.80mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.220" (5.60mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
136+0.13 EUR
157+0.11 EUR
187+0.09 EUR
199+0.09 EUR
208+0.09 EUR
250+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 100
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50M030050N035 50M030050N035 Essentra Components skuAsset?mediaId=168388 Description: PAN SLOTTED SCREW, M3 X .5 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M3x0.5
Type: Machine Screw
Length - Overall: 1.449" (36.80mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.220" (5.60mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 904 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
81+0.22 EUR
88+0.20 EUR
97+0.18 EUR
105+0.17 EUR
113+0.16 EUR
250+0.14 EUR
Mindestbestellmenge: 67
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50M100150N030 50M100150N030 Essentra Components skuAsset?mediaId=168522 Description: PAN SLOTTED SCREW, M10 X 1.5 THR
Packaging: Bulk
Material: Nylon
Thread Size: M10x1.5
Type: Machine Screw
Length - Overall: 1.417" (36.00mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.787" (20.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
13+1.42 EUR
14+1.33 EUR
25+1.21 EUR
50+1.14 EUR
100+1.07 EUR
250+1.00 EUR
500+0.95 EUR
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50M100150N035 50M100150N035 Essentra Components 5020.PDF Description: PAN SLOTTED SCREW, M10 X 1.5 THR
Packaging: Bulk
Material: Nylon
Thread Size: M10x1.5
Type: Machine Screw
Length - Overall: 1.614" (41.00mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.787" (20.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
23+0.78 EUR
25+0.73 EUR
27+0.67 EUR
50+0.62 EUR
100+0.59 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 19
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AM50N03-12I AM50N03-12I Analog Power Inc. datasheet.php?data1=DS_AM50N03-12I_1A_1 Description: MOSFET N-CH 30V 50.7A TO-251
Packaging: Bulk
Package / Case: TO-251-3, IPak, Short Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1299 pF @ 15 V
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
28+0.64 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.37 EUR
Mindestbestellmenge: 19
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BSC050N03LS G BSC050N03LS G Infineon Technologies Infineon_BSC050N03LS_DS_v02_01_en-1226245.pdf MOSFETs N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 21169 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.50 EUR
10+1.01 EUR
100+0.70 EUR
500+0.59 EUR
1000+0.51 EUR
2500+0.47 EUR
5000+0.44 EUR
Mindestbestellmenge: 2
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BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies Infineon_BSC050N03LS_DS_v02_01_en-1226245.pdf MOSFETs N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 5193 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.64 EUR
10+1.04 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.43 EUR
10000+0.36 EUR
Mindestbestellmenge: 2
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BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 2526 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.44 EUR
Mindestbestellmenge: 11
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BSC050N03LSGXT BSC050N03LSGXT Infineon Technologies Infineon-BSC050N03LS-DS-v02_01-en-770891.pdf MOSFETs N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.50 EUR
10+1.01 EUR
100+0.70 EUR
500+0.59 EUR
1000+0.51 EUR
2500+0.49 EUR
5000+0.42 EUR
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BSC150N03LD G BSC150N03LD G Infineon Technologies BSC150N03LD_rev1_4-1730932.pdf MOSFETs N-Ch 30V 20A TDSON-8 OptiMOS 3
auf Bestellung 3888 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.67 EUR
10+1.25 EUR
100+0.85 EUR
500+0.71 EUR
1000+0.65 EUR
5000+0.55 EUR
10000+0.49 EUR
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BSC150N03LDGATMA1 BSC150N03LDGATMA1 Infineon Technologies BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 45997 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
14+1.30 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.56 EUR
Mindestbestellmenge: 9
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BSC150N03LDGATMA1 BSC150N03LDGATMA1 Infineon Technologies BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.54 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC150N03LDGATMA1 BSC150N03LDGATMA1 Infineon Technologies BSC150N03LD_rev1_4-1730932.pdf MOSFETs N-Ch 30V 20A TDSON-8 OptiMOS 3
auf Bestellung 7704 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.71 EUR
10+1.06 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.55 EUR
5000+0.49 EUR
Mindestbestellmenge: 2
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BSF050N03LQ3G Infineon Technologies INFNS16729-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
770+0.66 EUR
Mindestbestellmenge: 770
Im Einkaufswagen  Stück im Wert von  UAH
BSO150N03MD G BSO150N03MD G Infineon Technologies BSO150N03MD_rev1_1-1225816.pdf MOSFETs N-Ch 30V 9.3A DSO-8 OptiMOS 3M
auf Bestellung 5303 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.18 EUR
10+1.47 EUR
100+1.04 EUR
500+0.93 EUR
1000+0.84 EUR
2500+0.71 EUR
25000+0.70 EUR
Mindestbestellmenge: 2
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BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 Infineon Technologies BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 24689 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.55 EUR
11+1.61 EUR
100+1.07 EUR
500+0.88 EUR
1000+0.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 Infineon Technologies BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.68 EUR
7500+0.63 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 Infineon Technologies BSO150N03MD_rev1_1-1225816.pdf MOSFETs N-Ch 30V 9.3A DSO-8 OptiMOS 3M
auf Bestellung 4088 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.87 EUR
10+1.29 EUR
100+0.94 EUR
500+0.77 EUR
1000+0.71 EUR
2500+0.68 EUR
5000+0.62 EUR
Mindestbestellmenge: 2
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BSO350N03 BSO350N03 Infineon Technologies BSO350N03.pdf Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
auf Bestellung 1832 Stücke:
Lieferzeit 10-14 Tag (e)
742+0.67 EUR
Mindestbestellmenge: 742
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LS G BSZ050N03LS G Infineon Technologies Infineon_BSZ050N03LS_G_DataSheet_v02_00_EN-3360770.pdf MOSFETs N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 8657 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.29 EUR
10+0.90 EUR
100+0.62 EUR
500+0.52 EUR
1000+0.47 EUR
5000+0.40 EUR
10000+0.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Infineon Technologies BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 7267 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
18+1.03 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.43 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Infineon Technologies Infineon_BSZ050N03LS_G_DataSheet_v02_00_EN-3360770.pdf MOSFETs N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 6340 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.27 EUR
10+0.82 EUR
100+0.58 EUR
500+0.47 EUR
1000+0.40 EUR
5000+0.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Infineon Technologies BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.39 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03MS G BSZ050N03MS G Infineon Technologies Infineon_BSZ050N03MS_G_DataSheet_v02_00_EN-3360715.pdf MOSFETs N-Ch 30V 40A TSDSON-8 OptiMOS 3M
auf Bestellung 9658 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.37 EUR
10+0.90 EUR
100+0.60 EUR
500+0.48 EUR
1000+0.40 EUR
2500+0.39 EUR
5000+0.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 Infineon Technologies BSZ050N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddea0e8802e4 Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 9493 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
2000+0.40 EUR
Mindestbestellmenge: 12
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DHD50N03 WXDH Transistor N-Channel MOSFET; 30V; 20V; 7.5mOhm; 50A; 60W; -55°C ~ 175°C; Similar to: IRLR8729, IRLR8729TR, IRLR8729TRL DHD50N03 DONGHAI TDHD50n03
Anzahl je Verpackung: 75 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)
150+0.35 EUR
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DIT150N03 DIT150N03 DIOTEC SEMICONDUCTOR dit150n03.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Heatsink thickness: max. 1.2mm
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 600A
Drain current: 105A
On-state resistance: 2.3mΩ
Power dissipation: 130W
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
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85+0.84 EUR
99+0.73 EUR
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DIT150N03 DIT150N03 DIOTEC SEMICONDUCTOR dit150n03.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Heatsink thickness: max. 1.2mm
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 600A
Drain current: 105A
On-state resistance: 2.3mΩ
Power dissipation: 130W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1186 Stücke:
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85+0.84 EUR
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DIT150N03 DIT150N03 Diotec Semiconductor dit150n03.pdf MOSFETs MOSFET, TO-220AB, 30V, 150A, 175C, N
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10+2.69 EUR
100+1.62 EUR
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DIT150N03 DIT150N03 Diotec Semiconductor dit150n03.pdf Description: MOSFET TO220AB N 30V 0.0023OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
auf Bestellung 986 Stücke:
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50+1.31 EUR
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G050N03S G050N03S Goford Semiconductor G050N03S.pdf Description: MOSFET N-CH 30V 18A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 8000 Stücke:
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4000+0.35 EUR
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G050N03S G050N03S Goford Semiconductor G050N03S.pdf Description: N30V, 18A,RD<5M@10V,VTH1.1V~2.4V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 15 V
auf Bestellung 3720 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
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G250N03IE G250N03IE Goford Semiconductor G250N03IE.pdf Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
auf Bestellung 2573 Stücke:
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33+0.55 EUR
53+0.33 EUR
100+0.21 EUR
500+0.15 EUR
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G50N03D5 G50N03D5 Goford Semiconductor G50N03D5.pdf Description: MOSFET N-CH 30V 50A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
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G50N03D5 G50N03D5 Goford Semiconductor G50N03D5.pdf Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
17+1.05 EUR
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500+0.53 EUR
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G50N03J G50N03J Goford Semiconductor G50N03J.pdf Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 3296 Stücke:
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G50N03J G50N03J Goford Semiconductor G50N03J.pdf Description: MOSFET N-CH 30V 65A TO-251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
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G50N03K G50N03K Goford Semiconductor G50N03K.pdf Description: MOSFET N-CH 30V 65A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.26 EUR
15000+0.24 EUR
30000+0.22 EUR
Mindestbestellmenge: 2500
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G50N03K G50N03K Goford Semiconductor G50N03K.pdf Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 15 V
auf Bestellung 1983 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.47 EUR
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G50N03K G50N03K Goford Semiconductor G50N03K.pdf Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 15 V
auf Bestellung 2500 Stücke:
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2500+0.38 EUR
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IPD050N03L G IPD050N03L G Infineon Technologies Infineon_IPD050N03LG_DataSheet_v02_01_EN-3362524.pdf MOSFETs N-Ch 30V 50A DPAK-2 OptiMOS 3
auf Bestellung 2500 Stücke:
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2+2.16 EUR
10+1.45 EUR
100+1.02 EUR
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IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Power dissipation: 68W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1780 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
88+0.82 EUR
100+0.72 EUR
115+0.62 EUR
122+0.59 EUR
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IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Power dissipation: 68W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1780 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
88+0.82 EUR
100+0.72 EUR
115+0.62 EUR
122+0.59 EUR
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IPD050N03LGATMA1 IPD050N03LGATMA1 Infineon Technologies Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
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IPD050N03LGATMA1 IPD050N03LGATMA1 UMW 6d54cf1e2e392d0c1536bc68b1d7813a.pdf Description: MOSFET N-CH 30V 50A DPAK
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.44 EUR
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IPD50N03S2-07 IPD50N03S2-07 Infineon Technologies Infineon_IPD50N03S2_07_DS_v01_00_en-3360291.pdf MOSFETs N-Ch 30V 50A DPAK-2 OptiMOS
auf Bestellung 7451 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.71 EUR
10+2.18 EUR
100+1.54 EUR
500+1.26 EUR
1000+1.18 EUR
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IPD50N03S207ATMA1 IPD50N03S207ATMA1 Infineon Technologies IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72 Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13610 Stücke:
Lieferzeit 10-14 Tag (e)
382+1.33 EUR
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IPD50N03S2L06ATMA1 IPD50N03S2L06ATMA1 Infineon Technologies Infineon-IPD50N03S2L_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270cfc3b6e&ack=t Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4648 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.01 EUR
10+2.58 EUR
100+1.76 EUR
500+1.41 EUR
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IPD50N03S4L-06 IPD50N03S4L-06 Infineon Technologies Infineon_IPD50N03S4L_06_DS_v01_01_en-3360018.pdf MOSFETs N-Ch 30V 50A DPAK-2 OptiMOS-T2
auf Bestellung 4850 Stücke:
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2+1.46 EUR
10+1.16 EUR
100+0.82 EUR
500+0.65 EUR
1000+0.61 EUR
2500+0.51 EUR
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IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 Infineon Technologies INFNS15258-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3905 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
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IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 Infineon Technologies INFNS15258-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+0.56 EUR
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IPP050N03LF2SAKSA1 IPP050N03LF2SAKSA1 Infineon Technologies Infineon_IPP050N03LF2S_DataSheet_v02_00_EN-3476269.pdf MOSFETs TRENCH <= 40V
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IPP050N03LF2SAKSA1 IPP050N03LF2SAKSA1 Infineon Technologies Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
auf Bestellung 958 Stücke:
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IPS050N03LG IPS050N03LG Infineon Technologies INFNS27908-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 1500 Stücke:
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1500+0.42 EUR
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MCAC150N03A-TP MCAC150N03A-TP Micro Commercial Co Description: MOSFET N-CH 30 150A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4498 pF @ 15 V
auf Bestellung 5000 Stücke:
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5000+0.47 EUR
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MCAC150N03A-TP MCAC150N03A-TP Micro Commercial Co Description: MOSFET N-CH 30 150A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4498 pF @ 15 V
auf Bestellung 6884 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.39 EUR
12+1.50 EUR
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MCAC50N03-TP MCAC50N03-TP Micro Commercial Co MCAC50N03(DFN5060).pdf Description: MOSFET N-CH 30 50A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 38W
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 15 V
auf Bestellung 4176 Stücke:
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11+1.64 EUR
18+1.02 EUR
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SUD50N03-10
Produktcode: 36248
zu Favoriten hinzufügen Lieblingsprodukt

sud50n03-10.pdf
SUD50N03-10
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: D-Pak
Uds,V: 30
Idd,A: 15
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 3200/55
JHGF: SMD
auf Bestellung 12 Stück:
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Anzahl Preis
1+0.98 EUR
10+0.84 EUR
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50N03-07
00+
auf Bestellung 229 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
50N03LT
Hersteller: PHILIPS
auf Bestellung 588 Stücke:
Lieferzeit 21-28 Tag (e)
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50M030050N030 5020.PDF
50M030050N030
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M3 X .5 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M3x0.5
Type: Machine Screw
Length - Overall: 1.252" (31.80mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.220" (5.60mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1400 Stücke:
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Anzahl Preis
100+0.18 EUR
136+0.13 EUR
157+0.11 EUR
187+0.09 EUR
199+0.09 EUR
208+0.09 EUR
250+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
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50M030050N035 skuAsset?mediaId=168388
50M030050N035
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M3 X .5 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M3x0.5
Type: Machine Screw
Length - Overall: 1.449" (36.80mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.220" (5.60mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 904 Stücke:
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Anzahl Preis
67+0.26 EUR
81+0.22 EUR
88+0.20 EUR
97+0.18 EUR
105+0.17 EUR
113+0.16 EUR
250+0.14 EUR
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50M100150N030 skuAsset?mediaId=168522
50M100150N030
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M10 X 1.5 THR
Packaging: Bulk
Material: Nylon
Thread Size: M10x1.5
Type: Machine Screw
Length - Overall: 1.417" (36.00mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.787" (20.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 500 Stücke:
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Anzahl Preis
11+1.71 EUR
13+1.42 EUR
14+1.33 EUR
25+1.21 EUR
50+1.14 EUR
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50M100150N035 5020.PDF
50M100150N035
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M10 X 1.5 THR
Packaging: Bulk
Material: Nylon
Thread Size: M10x1.5
Type: Machine Screw
Length - Overall: 1.614" (41.00mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.787" (20.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
23+0.78 EUR
25+0.73 EUR
27+0.67 EUR
50+0.62 EUR
100+0.59 EUR
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AM50N03-12I datasheet.php?data1=DS_AM50N03-12I_1A_1
AM50N03-12I
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 30V 50.7A TO-251
Packaging: Bulk
Package / Case: TO-251-3, IPak, Short Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1299 pF @ 15 V
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
28+0.64 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.37 EUR
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BSC050N03LS G Infineon_BSC050N03LS_DS_v02_01_en-1226245.pdf
BSC050N03LS G
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 21169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.50 EUR
10+1.01 EUR
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BSC050N03LSGATMA1 Infineon_BSC050N03LS_DS_v02_01_en-1226245.pdf
BSC050N03LSGATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 5193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.64 EUR
10+1.04 EUR
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BSC050N03LSGATMA1 Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b
BSC050N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 2526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
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BSC050N03LSGXT Infineon-BSC050N03LS-DS-v02_01-en-770891.pdf
BSC050N03LSGXT
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.50 EUR
10+1.01 EUR
100+0.70 EUR
500+0.59 EUR
1000+0.51 EUR
2500+0.49 EUR
5000+0.42 EUR
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BSC150N03LD G BSC150N03LD_rev1_4-1730932.pdf
BSC150N03LD G
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 20A TDSON-8 OptiMOS 3
auf Bestellung 3888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.67 EUR
10+1.25 EUR
100+0.85 EUR
500+0.71 EUR
1000+0.65 EUR
5000+0.55 EUR
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BSC150N03LDGATMA1 BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f
BSC150N03LDGATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 45997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.30 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.56 EUR
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BSC150N03LDGATMA1 BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f
BSC150N03LDGATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.54 EUR
Mindestbestellmenge: 5000
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BSC150N03LDGATMA1 BSC150N03LD_rev1_4-1730932.pdf
BSC150N03LDGATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 20A TDSON-8 OptiMOS 3
auf Bestellung 7704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.71 EUR
10+1.06 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.55 EUR
5000+0.49 EUR
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BSF050N03LQ3G INFNS16729-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
770+0.66 EUR
Mindestbestellmenge: 770
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BSO150N03MD G BSO150N03MD_rev1_1-1225816.pdf
BSO150N03MD G
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 9.3A DSO-8 OptiMOS 3M
auf Bestellung 5303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.18 EUR
10+1.47 EUR
100+1.04 EUR
500+0.93 EUR
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25000+0.70 EUR
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BSO150N03MDGXUMA1 BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c
BSO150N03MDGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 24689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
11+1.61 EUR
100+1.07 EUR
500+0.88 EUR
1000+0.76 EUR
Mindestbestellmenge: 7
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BSO150N03MDGXUMA1 BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c
BSO150N03MDGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.68 EUR
7500+0.63 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BSO150N03MDGXUMA1 BSO150N03MD_rev1_1-1225816.pdf
BSO150N03MDGXUMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 9.3A DSO-8 OptiMOS 3M
auf Bestellung 4088 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.87 EUR
10+1.29 EUR
100+0.94 EUR
500+0.77 EUR
1000+0.71 EUR
2500+0.68 EUR
5000+0.62 EUR
Mindestbestellmenge: 2
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BSO350N03 BSO350N03.pdf
BSO350N03
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
auf Bestellung 1832 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
742+0.67 EUR
Mindestbestellmenge: 742
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LS G Infineon_BSZ050N03LS_G_DataSheet_v02_00_EN-3360770.pdf
BSZ050N03LS G
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 8657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.29 EUR
10+0.90 EUR
100+0.62 EUR
500+0.52 EUR
1000+0.47 EUR
5000+0.40 EUR
10000+0.35 EUR
Mindestbestellmenge: 3
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BSZ050N03LSGATMA1 BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee
BSZ050N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 7267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
18+1.03 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.43 EUR
Mindestbestellmenge: 11
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BSZ050N03LSGATMA1 Infineon_BSZ050N03LS_G_DataSheet_v02_00_EN-3360770.pdf
BSZ050N03LSGATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 6340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.27 EUR
10+0.82 EUR
100+0.58 EUR
500+0.47 EUR
1000+0.40 EUR
5000+0.35 EUR
Mindestbestellmenge: 3
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BSZ050N03LSGATMA1 BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee
BSZ050N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.39 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03MS G Infineon_BSZ050N03MS_G_DataSheet_v02_00_EN-3360715.pdf
BSZ050N03MS G
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 40A TSDSON-8 OptiMOS 3M
auf Bestellung 9658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.37 EUR
10+0.90 EUR
100+0.60 EUR
500+0.48 EUR
1000+0.40 EUR
2500+0.39 EUR
5000+0.33 EUR
Mindestbestellmenge: 3
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BSZ050N03MSGATMA1 BSZ050N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddea0e8802e4
BSZ050N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 9493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
2000+0.40 EUR
Mindestbestellmenge: 12
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DHD50N03
Hersteller: WXDH
Transistor N-Channel MOSFET; 30V; 20V; 7.5mOhm; 50A; 60W; -55°C ~ 175°C; Similar to: IRLR8729, IRLR8729TR, IRLR8729TRL DHD50N03 DONGHAI TDHD50n03
Anzahl je Verpackung: 75 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
150+0.35 EUR
Mindestbestellmenge: 150
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DIT150N03 dit150n03.pdf
DIT150N03
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Heatsink thickness: max. 1.2mm
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 600A
Drain current: 105A
On-state resistance: 2.3mΩ
Power dissipation: 130W
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
76+0.95 EUR
85+0.84 EUR
99+0.73 EUR
104+0.69 EUR
Mindestbestellmenge: 69
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DIT150N03 dit150n03.pdf
DIT150N03
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Heatsink thickness: max. 1.2mm
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 600A
Drain current: 105A
On-state resistance: 2.3mΩ
Power dissipation: 130W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1186 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
69+1.04 EUR
76+0.95 EUR
85+0.84 EUR
99+0.73 EUR
104+0.69 EUR
Mindestbestellmenge: 69
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DIT150N03 dit150n03.pdf
DIT150N03
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, TO-220AB, 30V, 150A, 175C, N
auf Bestellung 852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.45 EUR
10+2.69 EUR
100+1.62 EUR
500+1.60 EUR
1000+1.55 EUR
2500+1.37 EUR
5000+1.29 EUR
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DIT150N03 dit150n03.pdf
DIT150N03
Hersteller: Diotec Semiconductor
Description: MOSFET TO220AB N 30V 0.0023OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.50 EUR
50+1.31 EUR
100+1.18 EUR
500+0.96 EUR
Mindestbestellmenge: 8
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G050N03S G050N03S.pdf
G050N03S
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 18A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.35 EUR
Mindestbestellmenge: 4000
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G050N03S G050N03S.pdf
G050N03S
Hersteller: Goford Semiconductor
Description: N30V, 18A,RD<5M@10V,VTH1.1V~2.4V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 15 V
auf Bestellung 3720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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G250N03IE G250N03IE.pdf
G250N03IE
Hersteller: Goford Semiconductor
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
53+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
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G50N03D5 G50N03D5.pdf
G50N03D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 50A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.28 EUR
Mindestbestellmenge: 5000
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G50N03D5 G50N03D5.pdf
G50N03D5
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.43 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
G50N03J G50N03J.pdf
G50N03J
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 3296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
75+0.71 EUR
150+0.63 EUR
525+0.52 EUR
1050+0.47 EUR
2025+0.43 EUR
Mindestbestellmenge: 11
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G50N03J G50N03J.pdf
G50N03J
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 65A TO-251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
Mindestbestellmenge: 3000
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G50N03K G50N03K.pdf
G50N03K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 65A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.26 EUR
15000+0.24 EUR
30000+0.22 EUR
Mindestbestellmenge: 2500
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G50N03K G50N03K.pdf
G50N03K
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 15 V
auf Bestellung 1983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
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G50N03K G50N03K.pdf
G50N03K
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.38 EUR
Mindestbestellmenge: 2500
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IPD050N03L G Infineon_IPD050N03LG_DataSheet_v02_01_EN-3362524.pdf
IPD050N03L G
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 50A DPAK-2 OptiMOS 3
auf Bestellung 2500 Stücke:
Lieferzeit 108-112 Tag (e)
Anzahl Preis
2+2.16 EUR
10+1.45 EUR
100+1.02 EUR
500+0.92 EUR
1000+0.83 EUR
2500+0.70 EUR
Mindestbestellmenge: 2
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IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Power dissipation: 68W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
88+0.82 EUR
100+0.72 EUR
115+0.62 EUR
122+0.59 EUR
500+0.58 EUR
Mindestbestellmenge: 67
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IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Power dissipation: 68W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1780 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
67+1.07 EUR
88+0.82 EUR
100+0.72 EUR
115+0.62 EUR
122+0.59 EUR
500+0.58 EUR
Mindestbestellmenge: 67
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IPD050N03LGATMA1 Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f
IPD050N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
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IPD050N03LGATMA1 6d54cf1e2e392d0c1536bc68b1d7813a.pdf
IPD050N03LGATMA1
Hersteller: UMW
Description: MOSFET N-CH 30V 50A DPAK
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.44 EUR
Mindestbestellmenge: 2500
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IPD50N03S2-07 Infineon_IPD50N03S2_07_DS_v01_00_en-3360291.pdf
IPD50N03S2-07
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 50A DPAK-2 OptiMOS
auf Bestellung 7451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.71 EUR
10+2.18 EUR
100+1.54 EUR
500+1.26 EUR
1000+1.18 EUR
Mindestbestellmenge: 2
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IPD50N03S207ATMA1 IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72
IPD50N03S207ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
382+1.33 EUR
Mindestbestellmenge: 382
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IPD50N03S2L06ATMA1 Infineon-IPD50N03S2L_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270cfc3b6e&ack=t
IPD50N03S2L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.58 EUR
100+1.76 EUR
500+1.41 EUR
1000+1.30 EUR
Mindestbestellmenge: 5
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IPD50N03S4L-06 Infineon_IPD50N03S4L_06_DS_v01_01_en-3360018.pdf
IPD50N03S4L-06
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 50A DPAK-2 OptiMOS-T2
auf Bestellung 4850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.46 EUR
10+1.16 EUR
100+0.82 EUR
500+0.65 EUR
1000+0.61 EUR
2500+0.51 EUR
Mindestbestellmenge: 2
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
IPD50N03S4L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 9
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
IPD50N03S4L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.56 EUR
Mindestbestellmenge: 2500
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IPP050N03LF2SAKSA1 Infineon_IPP050N03LF2S_DataSheet_v02_00_EN-3476269.pdf
IPP050N03LF2SAKSA1
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
auf Bestellung 3747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.46 EUR
10+1.30 EUR
100+0.89 EUR
500+0.74 EUR
1000+0.63 EUR
3000+0.57 EUR
5000+0.53 EUR
Mindestbestellmenge: 2
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IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
IPP050N03LF2SAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
Mindestbestellmenge: 9
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IPS050N03LG INFNS27908-1.pdf?t.download=true&u=5oefqw
IPS050N03LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.42 EUR
Mindestbestellmenge: 1500
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MCAC150N03A-TP
MCAC150N03A-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 30 150A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4498 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.47 EUR
Mindestbestellmenge: 5000
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MCAC150N03A-TP
MCAC150N03A-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 30 150A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4498 pF @ 15 V
auf Bestellung 6884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.50 EUR
100+1.00 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 8
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MCAC50N03-TP MCAC50N03(DFN5060).pdf
MCAC50N03-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 30 50A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 38W
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 15 V
auf Bestellung 4176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
18+1.02 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.46 EUR
2000+0.42 EUR
Mindestbestellmenge: 11
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