Suchergebnisse für "5198" : > 120
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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55198-P1S2 | TALEMA |
Category: Toroidal Transformers Description: Transformer: toroidal; 625VA; 230VAC; 50V; 50V; 6.25A; 6.25A; H: 75mm Height: 75mm Type of transformer: toroidal Primary voltage: 230V AC Secondary voltage 1: 50V Secondary voltage 2: 50V Secondary winding current 1: 6.25A Secondary winding current 2: 6.25A Power: 625VA Leads: cables Diameter: 140mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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6651981-1 | TE Connectivity |
Category: Unclassified Description: 6651981-1 |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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6651982-1 | TE Connectivity |
Category: Unclassified Description: 6651982-1 |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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75198-2501 | MOLEX |
Category: Unclassified Description: 75198-2501 |
auf Bestellung 2140 Stücke: Lieferzeit 14-21 Tag (e) |
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81519832 | CROUZET |
Category: Valve and Manifolds Description: Electromagnetic valve Type of pneumatic module: electromagnetic valve |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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CMF55198K00BHBF | Vishay / Dale | Metal Film Resistors - Through Hole 1/2W 198Kohms .1% |
auf Bestellung 327 Stücke: Lieferzeit 14-28 Tag (e) |
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NTE5198A | NTE Electronics |
Category: Stud mounting Zener diodes Description: Diode: Zener; 10W; 24V; DO4; screw type; bulk; anode to stud; 10uA Mounting: screw type Power dissipation: 10W Kind of package: bulk Type of diode: Zener Case: DO4 Tolerance: ±5% Semiconductor structure: anode to stud Zener voltage: 24V Leakage current: 10µA |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE5198A | NTE Electronics |
Category: Stud mounting Zener diodes Description: Diode: Zener; 10W; 24V; DO4; screw type; bulk; anode to stud; 10uA Mounting: screw type Power dissipation: 10W Kind of package: bulk Type of diode: Zener Case: DO4 Tolerance: ±5% Semiconductor structure: anode to stud Zener voltage: 24V Leakage current: 10µA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR5198NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Mounting: SMD Power dissipation: 0.6W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT23 Drain-source voltage: 60V Drain current: 1.6A On-state resistance: 155mΩ Type of transistor: N-MOSFET |
auf Bestellung 2045 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5198NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Mounting: SMD Power dissipation: 0.6W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT23 Drain-source voltage: 60V Drain current: 1.6A On-state resistance: 155mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2045 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR5198NLT1G | onsemi |
Description: MOSFET N-CH 60V 1.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V |
auf Bestellung 141000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5198NLT1G | onsemi |
Description: MOSFET N-CH 60V 1.7A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V |
auf Bestellung 144177 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5198NLT1G | onsemi | MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH |
auf Bestellung 57845 Stücke: Lieferzeit 14-28 Tag (e) |
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NVR5198NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Mounting: SMD Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 27A Case: SOT23 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.205Ω Type of transistor: N-MOSFET |
auf Bestellung 1855 Stücke: Lieferzeit 14-21 Tag (e) |
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NVR5198NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Mounting: SMD Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 27A Case: SOT23 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.205Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1855 Stücke: Lieferzeit 7-14 Tag (e) |
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NVR5198NLT1G | onsemi |
Description: MOSFET N-CH 60V 1.7A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 59950 Stücke: Lieferzeit 10-14 Tag (e) |
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NVR5198NLT1G | onsemi |
Description: MOSFET N-CH 60V 1.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 56750 Stücke: Lieferzeit 10-14 Tag (e) |
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NVR5198NLT1G | onsemi | MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH |
auf Bestellung 78945 Stücke: Lieferzeit 14-28 Tag (e) |
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NVR5198NLT3G | onsemi | MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH |
auf Bestellung 6097 Stücke: Lieferzeit 14-28 Tag (e) |
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PANR 103395-198 | Ametherm | NTC (Negative Temperature Coefficient) Thermistors NTC THERMISTOR PROBE |
auf Bestellung 23 Stücke: Lieferzeit 14-28 Tag (e) |
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188351985 | SAGEM | 06+ |
auf Bestellung 3424 Stücke: Lieferzeit 21-28 Tag (e) |
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2N5198 | MOT |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N5198 | Vishay | 2002 |
auf Bestellung 36 Stücke: Lieferzeit 21-28 Tag (e) |
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2N5198 | VISHAY | CAN |
auf Bestellung 837 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1941/2SC5198; Транзисторная пара; Корпус: TO-247 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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54809-5198 | molex | 06+ 05+ |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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751980C1Z G1 | TI | 09+ |
auf Bestellung 2418 Stücke: Lieferzeit 21-28 Tag (e) |
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751980C1ZG1 |
auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
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AN5198 | N/A |
auf Bestellung 1717 Stücke: Lieferzeit 21-28 Tag (e) |
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B45198-S6156-K19 | SIEMINS |
auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) |
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B45198-S6156-K19 | SIEMINS | 07+; |
auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) |
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B45198-SB156-K-19 |
auf Bestellung 682 Stücke: Lieferzeit 21-28 Tag (e) |
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B45198E6106M409V10 |
auf Bestellung 72500 Stücke: Lieferzeit 21-28 Tag (e) |
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B45198E6335K306 |
auf Bestellung 23500 Stücke: Lieferzeit 21-28 Tag (e) |
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B45198E6335M309 |
auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) |
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B45198H2686M409 |
auf Bestellung 7750 Stücke: Lieferzeit 21-28 Tag (e) |
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B45198H6156M409V10 |
auf Bestellung 72500 Stücke: Lieferzeit 21-28 Tag (e) |
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B45198P6335M319 |
auf Bestellung 72500 Stücke: Lieferzeit 21-28 Tag (e) |
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C5198 | N/A |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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D751980C1ZPHR | TI | 2005PB |
auf Bestellung 538 Stücke: Lieferzeit 21-28 Tag (e) |
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D751980C1ZZPHR | TI | 2006 |
auf Bestellung 1584 Stücke: Lieferzeit 21-28 Tag (e) |
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D751980C1ZZPHR | TI | BGA |
auf Bestellung 1559 Stücke: Lieferzeit 21-28 Tag (e) |
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D751980C1ZZPHR(DB2102) | TI | BGA?? |
auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) |
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D751980CGPHR | TI | BGA 05+ |
auf Bestellung 366 Stücke: Lieferzeit 21-28 Tag (e) |
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D751980CGPHR(DB2100) | TI | BGA?? |
auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
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D751980CZPHR | TI | 0531+ |
auf Bestellung 270 Stücke: Lieferzeit 21-28 Tag (e) |
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D751988GHH | 07+ |
auf Bestellung 975 Stücke: Lieferzeit 21-28 Tag (e) |
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DB2100(D751980C) | TI | BGA?? |
auf Bestellung 136 Stücke: Lieferzeit 21-28 Tag (e) |
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DB2100(D751980CGPHR) | TI | BGA?? |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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DB2100/D751980CGPHR | TI | BGA?? |
auf Bestellung 145 Stücke: Lieferzeit 21-28 Tag (e) |
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DB2100?D751980C? | TI | BGA?? |
auf Bestellung 151 Stücke: Lieferzeit 21-28 Tag (e) |
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DB2102(D751980C? | TI | BGA?? |
auf Bestellung 45 Stücke: Lieferzeit 21-28 Tag (e) |
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HIP51982DQ | 07+ |
auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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JAN2N5198 | VISHAY | CAN |
auf Bestellung 466 Stücke: Lieferzeit 21-28 Tag (e) |
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JAN2N5198 | SILICONI |
auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) |
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JANTX2N5198 | SILICONI |
auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) |
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JANTX2N5198 | VISHAY | CAN |
auf Bestellung 318 Stücke: Lieferzeit 21-28 Tag (e) |
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JTX2N5198 | SILICONI |
auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) |
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JX2N5198 | SILICONI |
auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) |
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M51981ML | MIT | 2001 SOT-89 |
auf Bestellung 123 Stücke: Lieferzeit 21-28 Tag (e) |
55198-P1S2 |
Hersteller: TALEMA
Category: Toroidal Transformers
Description: Transformer: toroidal; 625VA; 230VAC; 50V; 50V; 6.25A; 6.25A; H: 75mm
Height: 75mm
Type of transformer: toroidal
Primary voltage: 230V AC
Secondary voltage 1: 50V
Secondary voltage 2: 50V
Secondary winding current 1: 6.25A
Secondary winding current 2: 6.25A
Power: 625VA
Leads: cables
Diameter: 140mm
Anzahl je Verpackung: 1 Stücke
Category: Toroidal Transformers
Description: Transformer: toroidal; 625VA; 230VAC; 50V; 50V; 6.25A; 6.25A; H: 75mm
Height: 75mm
Type of transformer: toroidal
Primary voltage: 230V AC
Secondary voltage 1: 50V
Secondary voltage 2: 50V
Secondary winding current 1: 6.25A
Secondary winding current 2: 6.25A
Power: 625VA
Leads: cables
Diameter: 140mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 107.89 EUR |
10+ | 103.75 EUR |
6651981-1 |
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 44.16 EUR |
12+ | 39 EUR |
24+ | 38.25 EUR |
47+ | 37.52 EUR |
56+ | 36.79 EUR |
6651982-1 |
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 64.58 EUR |
8+ | 63.79 EUR |
75198-2501 |
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 33.25 EUR |
16+ | 29.37 EUR |
31+ | 28.83 EUR |
62+ | 28.26 EUR |
108+ | 27.71 EUR |
250+ | 25.2 EUR |
500+ | 22.91 EUR |
81519832 |
Hersteller: CROUZET
Category: Valve and Manifolds
Description: Electromagnetic valve
Type of pneumatic module: electromagnetic valve
Category: Valve and Manifolds
Description: Electromagnetic valve
Type of pneumatic module: electromagnetic valve
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 85.1 EUR |
5+ | 83.54 EUR |
CMF55198K00BHBF |
Hersteller: Vishay / Dale
Metal Film Resistors - Through Hole 1/2W 198Kohms .1%
Metal Film Resistors - Through Hole 1/2W 198Kohms .1%
auf Bestellung 327 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 3.93 EUR |
15+ | 3.48 EUR |
100+ | 2.63 EUR |
200+ | 2.27 EUR |
500+ | 1.89 EUR |
1000+ | 1.62 EUR |
NTE5198A |
Hersteller: NTE Electronics
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 24V; DO4; screw type; bulk; anode to stud; 10uA
Mounting: screw type
Power dissipation: 10W
Kind of package: bulk
Type of diode: Zener
Case: DO4
Tolerance: ±5%
Semiconductor structure: anode to stud
Zener voltage: 24V
Leakage current: 10µA
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 24V; DO4; screw type; bulk; anode to stud; 10uA
Mounting: screw type
Power dissipation: 10W
Kind of package: bulk
Type of diode: Zener
Case: DO4
Tolerance: ±5%
Semiconductor structure: anode to stud
Zener voltage: 24V
Leakage current: 10µA
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 18.29 EUR |
5+ | 17.3 EUR |
NTE5198A |
Hersteller: NTE Electronics
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 24V; DO4; screw type; bulk; anode to stud; 10uA
Mounting: screw type
Power dissipation: 10W
Kind of package: bulk
Type of diode: Zener
Case: DO4
Tolerance: ±5%
Semiconductor structure: anode to stud
Zener voltage: 24V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: Stud mounting Zener diodes
Description: Diode: Zener; 10W; 24V; DO4; screw type; bulk; anode to stud; 10uA
Mounting: screw type
Power dissipation: 10W
Kind of package: bulk
Type of diode: Zener
Case: DO4
Tolerance: ±5%
Semiconductor structure: anode to stud
Zener voltage: 24V
Leakage current: 10µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 18.29 EUR |
5+ | 17.3 EUR |
NTR5198NLT1G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.6A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.6A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
auf Bestellung 2045 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
180+ | 0.4 EUR |
375+ | 0.19 EUR |
425+ | 0.17 EUR |
490+ | 0.15 EUR |
515+ | 0.14 EUR |
NTR5198NLT1G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.6A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.6A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2045 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
180+ | 0.4 EUR |
375+ | 0.19 EUR |
425+ | 0.17 EUR |
490+ | 0.15 EUR |
515+ | 0.14 EUR |
NTR5198NLT1G |
Hersteller: onsemi
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
9000+ | 0.12 EUR |
75000+ | 0.1 EUR |
NTR5198NLT1G |
Hersteller: onsemi
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
auf Bestellung 144177 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
39+ | 0.46 EUR |
100+ | 0.23 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
NTR5198NLT1G |
Hersteller: onsemi
MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
auf Bestellung 57845 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 0.92 EUR |
87+ | 0.6 EUR |
177+ | 0.29 EUR |
1000+ | 0.23 EUR |
3000+ | 0.2 EUR |
9000+ | 0.18 EUR |
24000+ | 0.17 EUR |
NVR5198NLT1G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
260+ | 0.28 EUR |
290+ | 0.25 EUR |
370+ | 0.19 EUR |
390+ | 0.18 EUR |
NVR5198NLT1G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1855 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
260+ | 0.28 EUR |
290+ | 0.25 EUR |
370+ | 0.19 EUR |
390+ | 0.18 EUR |
NVR5198NLT1G |
Hersteller: onsemi
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 59950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
29+ | 0.61 EUR |
100+ | 0.36 EUR |
500+ | 0.34 EUR |
1000+ | 0.23 EUR |
NVR5198NLT1G |
Hersteller: onsemi
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 56750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
6000+ | 0.2 EUR |
9000+ | 0.18 EUR |
NVR5198NLT1G |
Hersteller: onsemi
MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
auf Bestellung 78945 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
45+ | 1.16 EUR |
80+ | 0.65 EUR |
117+ | 0.44 EUR |
1000+ | 0.34 EUR |
3000+ | 0.28 EUR |
9000+ | 0.26 EUR |
NVR5198NLT3G |
Hersteller: onsemi
MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
auf Bestellung 6097 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 1.09 EUR |
56+ | 0.94 EUR |
100+ | 0.65 EUR |
500+ | 0.51 EUR |
1000+ | 0.37 EUR |
2500+ | 0.35 EUR |
10000+ | 0.32 EUR |
PANR 103395-198 |
Hersteller: Ametherm
NTC (Negative Temperature Coefficient) Thermistors NTC THERMISTOR PROBE
NTC (Negative Temperature Coefficient) Thermistors NTC THERMISTOR PROBE
auf Bestellung 23 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 21.19 EUR |
10+ | 19.68 EUR |
25+ | 16.8 EUR |
50+ | 13.99 EUR |
100+ | 13.36 EUR |
250+ | 12.95 EUR |
500+ | 12.09 EUR |
2SA1941/2SC5198; Транзисторная пара; Корпус: TO-247 |
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)